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SI4463BDY-T1-E3

SI4463BDY-T1-E3
Mfr. #:
SI4463BDY-T1-E3
Hersteller:
Vishay
Beschreibung:
MOSFET P-CH 20V 9.8A 8-SOIC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4463BDY-T1-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SI4463BDY-T1-E3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SI4463BDY-T1-E, SI4463BD, SI4463B, SI4463, SI446, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET; P-Channel; -20 V; + 12 V; 0.009Ohms @ -4.5 V; -13 A; 1.5 W @ degC
***ure Electronics
Single P-Channel 20 V 0.011 Ohms Surface Mount Power Mosfet - SOIC-8
***ark
Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:9.8A; On Resistance Rds(On):0.0085Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:12V; Threshold Voltage Vgs:1.4V Rohs Compliant: No
***ment14 APAC
MOSFET, P, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:9.8A; Drain Source Voltage Vds:20V; On Resistance Rds(on):110mohm; Rds(on) Test Voltage Vgs:12V; Threshold Voltage Vgs Typ:-1.4V; Power Dissipation Pd:1.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Base Number:4463; Current Id Max:13.7A; On State Resistance @ Vgs = 2.5V:20mohm; On State Resistance @ Vgs = 4.5V:14mohm; On State resistance @ Vgs = 10V:11mohm; P Channel Gate Charge:37nC; Package / Case:SOIC; Power Dissipation Pd:1.5W; Termination Type:SMD; Voltage Vds Typ:-20V; Voltage Vgs Max:-1.4V; Voltage Vgs Rds on Measurement:-10V
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI4463BDY-T1-E3
DISTI # V72:2272_09216501		Vishay IntertechnologiesTrans MOSFET P-CH 20V 9.8A 8-Pin SOIC N T/R
RoHS: Compliant		968
  • 500:$0.8723
  • 250:$0.9489
  • 100:$1.0543
  • 25:$1.2141
  • 10:$1.3490
  • 1:$1.6585
SI4463BDY-T1-E3
DISTI # V36:1790_09216501		Vishay IntertechnologiesTrans MOSFET P-CH 20V 9.8A 8-Pin SOIC N T/R
RoHS: Compliant		0
  • 2500:$0.7772
SI4463BDY-T1-E3
DISTI # SI4463BDY-T1-E3CT-ND		Vishay SiliconixMOSFET P-CH 20V 9.8A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		22896In Stock
  • 1000:$0.6904
  • 500:$0.8745
  • 100:$1.0587
  • 10:$1.3580
  • 1:$1.5200
SI4463BDY-T1-E3
DISTI # SI4463BDY-T1-E3DKR-ND		Vishay SiliconixMOSFET P-CH 20V 9.8A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		22896In Stock
  • 1000:$0.6904
  • 500:$0.8745
  • 100:$1.0587
  • 10:$1.3580
  • 1:$1.5200
SI4463BDY-T1-E3
DISTI # SI4463BDY-T1-E3TR-ND		Vishay SiliconixMOSFET P-CH 20V 9.8A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		22500In Stock
  • 12500:$0.5720
  • 5000:$0.5944
  • 2500:$0.6256
SI4463BDY-T1-E3
DISTI # 33632223		Vishay IntertechnologiesTrans MOSFET P-CH 20V 9.8A 8-Pin SOIC N T/R
RoHS: Compliant		5000
  • 2500:$0.4388
SI4463BDY-T1-E3
DISTI # 32445255		Vishay IntertechnologiesTrans MOSFET P-CH 20V 9.8A 8-Pin SOIC N T/R
RoHS: Compliant		968
  • 10:$1.6585
SI4463BDY-T1-E3
DISTI # SI4463BDY-T1-E3		Vishay IntertechnologiesTrans MOSFET P-CH 20V 9.8A 8-Pin SOIC N T/R (Alt: SI4463BDY-T1-E3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    SI4463BDY-T1-E3
    DISTI # SI4463BDY-T1-E3    		Vishay IntertechnologiesTrans MOSFET P-CH 20V 9.8A 8-Pin SOIC N T/R (Alt: SI4463BDY-T1-E3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel    		Europe - 0
    • 25000:€0.4939
    • 15000:€0.5159
    • 10000:€0.5829
    • 5000:€0.7189
    • 2500:€1.0029
    SI4463BDY-T1-E3
    DISTI # SI4463BDY-T1-E3    		Vishay IntertechnologiesTrans MOSFET P-CH 20V 9.8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4463BDY-T1-E3)
    RoHS: Not Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 25000:$0.7299
    • 15000:$0.7499
    • 10000:$0.7719
    • 5000:$0.8049
    • 2500:$0.8289
    SI4463BDY-T1-E3
    DISTI # 57J5674    		Vishay IntertechnologiesTrans MOSFET P-CH 20V 9.8A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 57J5674)
    RoHS: Not Compliant
    Min Qty: 1
    Container: Ammo Pack    		Americas - 0
    • 1:$0.8850
    SI4463BDY-T1-E3
    DISTI # 57J5674    		Vishay IntertechnologiesP CHANNEL MOSFET, -20V, 13.7A, SOIC,Transistor Polarity:P Channel,Continuous Drain Current Id:13.7A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.0085ohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:-1.4V RoHS Compliant: Yes9
    • 1:$0.5340
    • 10:$0.5340
    • 25:$0.5340
    • 50:$0.5340
    • 100:$0.5340
    • 250:$0.5340
    • 500:$0.5340
    SI4463BDY-T1-E3.
    DISTI # 30AC0163    		Vishay IntertechnologiesTransistor Polarity:P Channel,Continuous Drain Current Id:9.8A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.0085ohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:-1.4V,Power Dissipation Pd:1.5W,No. of Pins:8Pins RoHS Compliant: No0
    • 25000:$0.7300
    • 15000:$0.7500
    • 10000:$0.7720
    • 5000:$0.8050
    • 1:$0.8290
    SI4463BDY-T1-E3
    DISTI # 70026141    		Vishay SiliconixMOSFET,P-Channel,-20 V,+ 12 V,0.009Ohms @ -4.5 V,-13 A,1.5 W @ degC
    RoHS: Compliant    		0
    • 2500:$0.8710
    SI4463BDY-T1-E3
    DISTI # 781-SI4463BDY-T1-E3    		Vishay IntertechnologiesMOSFET 20V 13.7A 0.011Ohm
    RoHS: Compliant    		14895
    • 1:$1.7700
    • 10:$1.4700
    • 100:$1.1400
    • 500:$0.9970
    • 1000:$0.8260
    • 2500:$0.7690
    • 5000:$0.7410
    SI4463BDY-T1-E3Vishay Siliconix 84
      SI4463BDY-T1-E3
      DISTI # 1497616RL      		Vishay IntertechnologiesMOSFET, P, SOIC
      RoHS: Compliant      		0
      • 500:$1.3200
      • 100:$1.6000
      • 10:$2.0500
      • 1:$2.2900
      SI4463BDY-T1-E3
      DISTI # 1497616      		Vishay IntertechnologiesMOSFET, P, SOIC
      RoHS: Compliant      		4286
      • 500:$1.3200
      • 100:$1.6000
      • 10:$2.0500
      • 1:$2.2900
      SI4463BDY-T1-E3Vishay IntertechnologiesMOSFET 20V 13.7A 0.011OhmAmericas - 2500
        SI4463BDY-T1-E3
        DISTI # 1497616        		Vishay IntertechnologiesMOSFET, P, SOIC
        RoHS: Compliant        		4696
        • 500:£0.6750
        • 250:£0.7230
        • 100:£0.7710
        • 10:£1.0500
        • 1:£1.3700
        Bild Teil # Beschreibung
        SI4463BDY-T1-E3

        Mfr.#: SI4463BDY-T1-E3

        OMO.#: OMO-SI4463BDY-T1-E3

        		 MOSFET 20V 13.7A 0.011Ohm
        SI4463BDY-T1-GE3

        Mfr.#: SI4463BDY-T1-GE3

        OMO.#: OMO-SI4463BDY-T1-GE3

        		 MOSFET 20V 13.7A 3.0W 11mohm @ 10V
        SI4463BDY-T1-GE3

        Mfr.#: SI4463BDY-T1-GE3

        OMO.#: OMO-SI4463BDY-T1-GE3-VISHAY

        		 RF Bipolar Transistors MOSFET 20V 13.7A 3.0W 11mohm @ 10V
        SI4463BDY-T1-E3-CUT TAPE

        Mfr.#: SI4463BDY-T1-E3-CUT TAPE

        OMO.#: OMO-SI4463BDY-T1-E3-CUT-TAPE-1190

        		 Neu und Original
        SI4463B

        Mfr.#: SI4463B

        OMO.#: OMO-SI4463B-1190

        		 Neu und Original
        SI4463BDY-T1-E3

        Mfr.#: SI4463BDY-T1-E3

        OMO.#: OMO-SI4463BDY-T1-E3-VISHAY

        		 MOSFET P-CH 20V 9.8A 8-SOIC
        SI4463BDY-T1-EJ

        Mfr.#: SI4463BDY-T1-EJ

        OMO.#: OMO-SI4463BDY-T1-EJ-1190

        		 Neu und Original
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        5500
        Menge eingeben:
        Der aktuelle Preis von SI4463BDY-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        0,66 $
        0,66 $
        10
        0,63 $
        6,31 $
        100
        0,60 $
        59,78 $
        500
        0,56 $
        282,30 $
        1000
        0,53 $
        531,40 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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