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SI4463BDY-T1-GE3

SI4463BDY-T1-GE3
Mfr. #:
SI4463BDY-T1-GE3
Hersteller:
Vishay
Beschreibung:
RF Bipolar Transistors MOSFET 20V 13.7A 3.0W 11mohm @ 10V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4463BDY-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SI4463BDY-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
VISHAY
Produktkategorie
IC-Chips
Tags
SI4463BD, SI4463B, SI4463, SI446, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***nell
P CHANNEL MOSFET, -20V, 13.7A, SOIC
***et
Trans MOSFET P-CH 20V 9.8A 8-Pin SOIC N T/R
***ment14 APAC
P CHANNEL MOSFET, -20V, 13.7A, SOIC; Tra; P CHANNEL MOSFET, -20V, 13.7A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:13.7A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:-2.5V; Threshold Voltage Vgs Typ:-1.4V
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI4463BDY-T1-GE3
DISTI # SI4463BDY-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 20V 9.8A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2490In Stock
  • 1000:$0.7233
  • 500:$0.9162
  • 100:$1.1814
  • 10:$1.4950
  • 1:$1.6900
SI4463BDY-T1-GE3
DISTI # SI4463BDY-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 20V 9.8A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2490In Stock
  • 1000:$0.7233
  • 500:$0.9162
  • 100:$1.1814
  • 10:$1.4950
  • 1:$1.6900
SI4463BDY-T1-GE3
DISTI # SI4463BDY-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 20V 9.8A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$0.6554
SI4463BDY-T1-GE3
DISTI # SI4463BDY-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 20V 9.8A 8-Pin SOIC N T/R (Alt: SI4463BDY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    SI4463BDY-T1-GE3
    DISTI # SI4463BDY-T1-GE3    		Vishay IntertechnologiesTrans MOSFET P-CH 20V 9.8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4463BDY-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 2500:$0.6559
    • 5000:$0.6539
    • 10000:$0.6519
    • 15000:$0.6499
    • 25000:$0.6479
    SI4463BDY-T1-GE3
    DISTI # 26R1879    		Vishay IntertechnologiesP CHANNEL MOSFET, -20V, 13.7A, SOIC,Transistor Polarity:P Channel,Continuous Drain Current Id:13.7A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:-2.5V,Threshold Voltage Vgs:-1.4V RoHS Compliant: Yes0
    • 1:$1.5800
    • 10:$1.3100
    • 25:$1.2100
    • 50:$1.1200
    • 100:$1.0200
    • 250:$0.9530
    • 500:$0.8850
    SI4463BDY-T1-GE3
    DISTI # 15R5028    		Vishay IntertechnologiesP CHANNEL MOSFET, -20V, 13.7A, SOIC,Transistor Polarity:P Channel,Continuous Drain Current Id:13.7A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:-2.5V,Threshold Voltage Vgs:-1.4V RoHS Compliant: Yes0
    • 1:$0.9580
    • 1000:$0.9010
    • 2000:$0.8550
    • 4000:$0.7700
    • 6000:$0.7410
    • 10000:$0.7130
    SI4463BDY-T1-GE3
    DISTI # 781-SI4463BDY-GE3    		Vishay IntertechnologiesMOSFET 20V 13.7A 3.0W 11mohm @ 10V
    RoHS: Compliant    		2429
    • 1:$1.5800
    • 10:$1.3100
    • 100:$1.0200
    • 500:$0.8850
    • 1000:$0.7340
    • 2500:$0.6830
    Bild Teil # Beschreibung
    SI4463BDY-T1-E3

    Mfr.#: SI4463BDY-T1-E3

    OMO.#: OMO-SI4463BDY-T1-E3

    		 MOSFET 20V 13.7A 0.011Ohm
    SI4463BDY-T1-GE3

    Mfr.#: SI4463BDY-T1-GE3

    OMO.#: OMO-SI4463BDY-T1-GE3

    		 MOSFET 20V 13.7A 3.0W 11mohm @ 10V
    SI4463BDY-T1-GE3

    Mfr.#: SI4463BDY-T1-GE3

    OMO.#: OMO-SI4463BDY-T1-GE3-VISHAY

    		 RF Bipolar Transistors MOSFET 20V 13.7A 3.0W 11mohm @ 10V
    SI4463BDY-T1-E3-CUT TAPE

    Mfr.#: SI4463BDY-T1-E3-CUT TAPE

    OMO.#: OMO-SI4463BDY-T1-E3-CUT-TAPE-1190

    		 Neu und Original
    SI4463BDY-T1-E3

    Mfr.#: SI4463BDY-T1-E3

    OMO.#: OMO-SI4463BDY-T1-E3-VISHAY

    		 MOSFET P-CH 20V 9.8A 8-SOIC
    SI4463BDY-T1-EJ

    Mfr.#: SI4463BDY-T1-EJ

    OMO.#: OMO-SI4463BDY-T1-EJ-1190

    		 Neu und Original
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1500
    Menge eingeben:
    Der aktuelle Preis von SI4463BDY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,97 $
    0,97 $
    10
    0,92 $
    9,23 $
    100
    0,87 $
    87,47 $
    500
    0,83 $
    413,05 $
    1000
    0,78 $
    777,50 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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