OMO ElectronicOMO Electronic
Expand menu
0 Wagen

IPI65R190CFD

IPI65R190CFD
Mfr. #:
IPI65R190CFD
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 650V 17.5A I2PAK-3 CoolMOS CFD2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPI65R190CFD Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPI65R190CFD Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-262-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
17.5 A
Rds On - Drain-Source-Widerstand:
190 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
68 nC
Pd - Verlustleistung:
151 W
Aufbau:
Single
Handelsname:
CoolMOS
Verpackung:
Rohr
Höhe:
9.45 mm
Länge:
10.2 mm
Serie:
CoolMOS CFD2
Transistortyp:
1 N-Channel
Breite:
4.5 mm
Marke:
Infineon-Technologien
Abfallzeit:
6.4 ns
Produktart:
MOSFET
Anstiegszeit:
8.4 ns
Werkspackungsmenge:
500
Unterkategorie:
MOSFETs
Teil # Aliase:
IPI65R190CFDXKSA1 IPI65R19CFDXK SP000905386
Gewichtseinheit:
0.084199 oz
Tags
IPI65R190CF, IPI65R19, IPI65R1, IPI65, IPI6, IPI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS® Power Transistors EXPANSION
Infineon Technologies has expanded its offering of CoolMOS® Power Transistors that use a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. These CoolMOS® Power Transistors provide all the benefits of a fast switching SJ MOSFET, while offering an extremely fast and robust body diode. Infineon Technologies CoolMOS® Power Transistors are especially suited for resonant switching PWM stages for PC Silverbox, LCD TV, lighting, server and telecom applications.Learn MoreInfineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.View the entire CoolMOS® Power Transistor offering
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Teil # Mfg. Beschreibung Aktie Preis
IPI65R190CFDXKSA1
DISTI # IPI65R190CFDXKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V 17.5A TO262
RoHS: Compliant
Min Qty: 500
Container: Tube		Temporarily Out of Stock
  • 500:$2.0267
IPI65R190CFDXKSA1
DISTI # IPI65R190CFDXKSA1		Infineon Technologies AGTrans MOSFET N-CH 650V 17.5A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI65R190CFDXKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 500:$1.4900
  • 1000:$1.4900
  • 2000:$1.3900
  • 3000:$1.3900
  • 5000:$1.3900
IPI65R190CFDXKSA2
DISTI # IPI65R190CFDXKSA2		Infineon Technologies AGTrans MOSFET N-CH 650V 17.5A 3-Pin TO-262 Tube - Rail/Tube (Alt: IPI65R190CFDXKSA2)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
    IPI65R190CFD
    DISTI # 726-IPI65R190CFD    		Infineon Technologies AGMOSFET N-Ch 650V 17.5A I2PAK-3 CoolMOS CFD2
    RoHS: Compliant    		0
    • 1:$2.9400
    • 10:$2.5000
    • 100:$2.1700
    • 250:$2.0600
    • 500:$1.8500
    IPI65R190CFDXKSA2
    DISTI # 726-IPI65R190CFDXKSA    		Infineon Technologies AGMOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and ther
    RoHS: Compliant    		0
    • 500:$1.8500
    • 1000:$1.5600
    • 2500:$1.4800
    • 5000:$1.4300
    Bild Teil # Beschreibung
    IPI65R380C6

    Mfr.#: IPI65R380C6

    OMO.#: OMO-IPI65R380C6

    		 MOSFET N-Ch 700V 10.6A I2PAK-3 CoolMOS C6
    IPI65R280E6XKSA1

    Mfr.#: IPI65R280E6XKSA1

    OMO.#: OMO-IPI65R280E6XKSA1

    		 MOSFET N-Ch 700V 13.8A I2PAK-3
    IPI65R190CFDXKSA2

    Mfr.#: IPI65R190CFDXKSA2

    OMO.#: OMO-IPI65R190CFDXKSA2

    		 MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improve
    IPI65R420CFDXKSA1

    Mfr.#: IPI65R420CFDXKSA1

    OMO.#: OMO-IPI65R420CFDXKSA1

    		 MOSFET LOW POWER_LEGACY
    IPI65R190C6XKSA1

    Mfr.#: IPI65R190C6XKSA1

    OMO.#: OMO-IPI65R190C6XKSA1

    		 MOSFET HIGH POWER_LEGACY
    IPI65R190CFDXKSA1

    Mfr.#: IPI65R190CFDXKSA1

    OMO.#: OMO-IPI65R190CFDXKSA1

    		 MOSFET HIGH POWER_LEGACY
    IPI65R190CFDXKSA1

    Mfr.#: IPI65R190CFDXKSA1

    OMO.#: OMO-IPI65R190CFDXKSA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 650V 17.5A TO262
    IPI65R310CFD

    Mfr.#: IPI65R310CFD

    OMO.#: OMO-IPI65R310CFD-1190

    		 MOSFET N-Ch 650V 11.4A I2PAK-3 CoolMOS CFD2
    IPI65R110CFD

    Mfr.#: IPI65R110CFD

    OMO.#: OMO-IPI65R110CFD-317

    		 RF Bipolar Transistors MOSFET N-Ch 700V 31.2A I2PAK-3 CoolMOS CFD2
    IPI65R150CFDXKSA1

    Mfr.#: IPI65R150CFDXKSA1

    OMO.#: OMO-IPI65R150CFDXKSA1-INFINEON-TECHNOLOGIES

    		 RF Bipolar Transistors MOSFET N-Ch 700V 72A I2PAK-3
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    2500
    Menge eingeben:
    Der aktuelle Preis von IPI65R190CFD dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,93 $
    2,93 $
    10
    2,49 $
    24,90 $
    100
    2,16 $
    216,00 $
    250
    2,05 $
    512,50 $
    500
    1,84 $
    920,00 $
    Beginnen mit
    Neueste Produkte
    More Newest Products
    Top