IPI65R190CFDXKSA2

IPI65R190CFDXKSA2
Mfr. #:
IPI65R190CFDXKSA2
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improve
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPI65R190CFDXKSA2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPI65R190CFDXKSA2 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-262-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
17.5 A
Rds On - Drain-Source-Widerstand:
190 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
68 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
151 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Rohr
Serie:
CFD2
Transistortyp:
1 N-Channel
Marke:
Infineon-Technologien
Abfallzeit:
6.4 ns
Produktart:
MOSFET
Anstiegszeit:
8.4 ns
Werkspackungsmenge:
500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
53.2 ns
Typische Einschaltverzögerungszeit:
12 ns
Teil # Aliase:
IPI65R190CFD
Tags
IPI65R190CF, IPI65R19, IPI65R1, IPI65, IPI6, IPI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Teil # Mfg. Beschreibung Aktie Preis
IPI65R190CFDXKSA2
DISTI # IPI65R190CFDXKSA2-ND
Infineon Technologies AGHIGH POWER_LEGACY
RoHS: Compliant
Min Qty: 500
Container: Tube
Temporarily Out of Stock
  • 500:$1.9346
IPI65R190CFDXKSA2
DISTI # IPI65R190CFDXKSA2
Infineon Technologies AGTrans MOSFET N-CH 650V 17.5A 3-Pin TO-262 Tube - Rail/Tube (Alt: IPI65R190CFDXKSA2)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 2000:$1.3900
  • 3000:$1.3900
  • 5000:$1.3900
  • 500:$1.4900
  • 1000:$1.4900
IPI65R190CFDXKSA2
DISTI # 726-IPI65R190CFDXKSA
Infineon Technologies AGMOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and ther
RoHS: Compliant
0
  • 500:$1.8500
  • 1000:$1.5600
  • 2500:$1.4800
  • 5000:$1.4300
Bild Teil # Beschreibung
IPI65R190C6

Mfr.#: IPI65R190C6

OMO.#: OMO-IPI65R190C6

MOSFET N-Ch 700V 20.2A I2PAK-3 CoolMOS C6
IPI65R190CFD

Mfr.#: IPI65R190CFD

OMO.#: OMO-IPI65R190CFD

MOSFET N-Ch 650V 17.5A I2PAK-3 CoolMOS CFD2
IPI65R190CFDXKSA2

Mfr.#: IPI65R190CFDXKSA2

OMO.#: OMO-IPI65R190CFDXKSA2

MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improve
IPI65R190C6XKSA1

Mfr.#: IPI65R190C6XKSA1

OMO.#: OMO-IPI65R190C6XKSA1

MOSFET HIGH POWER_LEGACY
IPI65R190CFDXKSA1

Mfr.#: IPI65R190CFDXKSA1

OMO.#: OMO-IPI65R190CFDXKSA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 650V 17.5A TO262
IPI65R190CFDXKSA2

Mfr.#: IPI65R190CFDXKSA2

OMO.#: OMO-IPI65R190CFDXKSA2-INFINEON-TECHNOLOGIES

HIGH POWER_LEGACY
IPI65R190C6,65C6190

Mfr.#: IPI65R190C6,65C6190

OMO.#: OMO-IPI65R190C6-65C6190-1190

Neu und Original
IPI65R190C6XKSA1

Mfr.#: IPI65R190C6XKSA1

OMO.#: OMO-IPI65R190C6XKSA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 650V 20.2A TO262
IPI65R190C6

Mfr.#: IPI65R190C6

OMO.#: OMO-IPI65R190C6-317

RF Bipolar Transistors MOSFET N-Ch 700V 20.2A I2PAK-3 CoolMOS C6
IPI65R190CFD

Mfr.#: IPI65R190CFD

OMO.#: OMO-IPI65R190CFD-317

RF Bipolar Transistors MOSFET N-Ch 650V 17.5A I2PAK-3 CoolMOS CFD2
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5500
Menge eingeben:
Der aktuelle Preis von IPI65R190CFDXKSA2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
500
1,85 $
925,00 $
1000
1,56 $
1 560,00 $
2500
1,48 $
3 700,00 $
5000
1,43 $
7 150,00 $
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