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IXFP4N60P3

IXFP4N60P3
Mfr. #:
IXFP4N60P3
Hersteller:
Littelfuse
Beschreibung:
MOSFET Polar3 HiPerFETs MOSFET w/Fast Diode
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFP4N60P3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFP4N60P3 DatasheetIXFP4N60P3 Datasheet (P4-P6)
ECAD Model:
Mehr Informationen:
IXFP4N60P3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
4 A
Rds On - Drain-Source-Widerstand:
2.2 Ohms
Handelsname:
HiPerFET
Verpackung:
Rohr
Serie:
IXFP4N60
Marke:
IXYS
Produktart:
MOSFET
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.012346 oz
Tags
IXFP4N, IXFP4, IXFP, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Electronics
MOSFET N-CH 600V 4A TO-220AB
***el Nordic
Contact for details
***emi
Power MOSFET, N-Channel, QFET®, 600 V, 4.5 A, 2.5 Ω, TO-220
***et Europe
Trans MOSFET N-CH 600V 4.5A 3-Pin(3+Tab) TO-220AB Rail
***ure Electronics
N-Channel 600 V 2.5 Ohm Through Hole Mosfet - TO-220
***ment14 APAC
N CHANNEL MOSFET, 600V, 4.5A TO-220; Tra; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Source Voltage Vds:600V; On
***r Electronics
Power Field-Effect Transistor, 4.5A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***ure Electronics
IRFBC30A Series N-Channel 600 V 2.2 Ohm Flange Mount Power Mosfet - TO-220AB
***ical
Trans MOSFET N-CH 600V 3.6A 3-Pin(3+Tab) TO-220AB
***el Electronic
1.2A High Power White LED Driver with I2C Compatible Interface 12-DSBGA -40 to 85
***nell
MOSFET, N, 600V, 3.6A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.6A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 2.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power
***et
Trans MOSFET N-CH 600V 3A 3-Pin(3+Tab) TO-220AB Rail
***nell
MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 2.8ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -; Power Dissipation Pd: 75W;
***ark
MOSFET, N TO-220MOSFET, N TO-220; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:600V; Case style:TO-220; Current, Id cont:3A; Current, Idm pulse:12A; Power, Pd:75W; Resistance, Rds on:2.8R; Length / Height, RoHS Compliant: Yes
***(Formerly Allied Electronics)
IRFBC30PBF N-channel MOSFET Transistor, 3.6 A, 600 V, 3-Pin TO-220AB
***ure Electronics
Single N-Channel 600 V 2.2 Ohms Flange Mount Power Mosfet - TO-220AB
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: TO-220 Polarity: N Power dissipation: 74 W
***ical
Trans MOSFET N-CH 600V 3.6A 3-Pin(3+Tab) TO-220AB
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.6A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 2.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation P
***emi
Power MOSFET, N-Channel, QFET®, 600 V, 3 A, 3.4 Ω, TO-220
***ark
TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,3A I(D),TO-220AB ROHS COMPLIANT: YES
***Yang
Trans MOSFET N-CH 600V 3A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***ure Electronics
N-Channel 600 V 3.4 Ohm Flange Mount Mosfet - TO-220
***enic
600V 3A 75W 3.4´Î@10V1.5A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 3A I(D), 600V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***(Formerly Allied Electronics)
IRF830APBF N-channel MOSFET Transistor; 5 A; 500 V; 3-Pin TO-220AB
***ure Electronics
Single N-Channel 500 V 1.4 Ohms Flange Mount Power Mosfet - TO-220-3
*** Source Electronics
Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220AB / MOSFET N-CH 500V 5A TO-220AB
***enic
500V 5A 1.4¦¸@10V,3A 74W 4.5V@250¦ÌA N Channel TO-220(TO-220-3) MOSFETs ROHS
***nsix Microsemi
Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, 500V, 5A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.5V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:5A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.7°C/W; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:74W; Power Dissipation Pd:74W; Pulse Current Idm:20A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Teil # Mfg. Beschreibung Aktie Preis
IXFP4N60P3
DISTI # IXFP4N60P3-ND		IXYS CorporationMOSFET N-CH 600V 4A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		25In Stock
  • 2500:$0.7560
  • 500:$0.9450
  • 100:$1.2150
  • 50:$1.3500
  • 10:$1.5120
  • 1:$1.6700
IXFP4N60P3
DISTI # 747-IXFP4N60P3		IXYS CorporationMOSFET Polar3 HiPerFETs MOSFET w/Fast Diode64
  • 1:$1.9200
  • 10:$1.7400
  • 25:$1.5100
  • 50:$1.4200
  • 100:$1.4000
  • 250:$1.1300
  • 500:$1.0900
  • 1000:$0.9010
  • 2500:$0.7560
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OMO.#: OMO-SM6T18A-STMICROELECTRONICS

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SPP20N60CFDXKSA1

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OMO.#: OMO-SPP20N60CFDXKSA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 650V 20.7A TO-220
LM8365BALMF27/NOPB

Mfr.#: LM8365BALMF27/NOPB

OMO.#: OMO-LM8365BALMF27-NOPB-TEXAS-INSTRUMENTS

 IC DETECT UNDERVOLT 2.7V SOT23-5
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Mfr.#: ACNW3130-000E

OMO.#: OMO-ACNW3130-000E-BROADCOM

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Verfügbarkeit
Aktie:
64
Auf Bestellung:
2047
Menge eingeben:
Der aktuelle Preis von IXFP4N60P3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,92 $
1,92 $
10
1,74 $
17,40 $
25
1,51 $
37,75 $
50
1,42 $
71,00 $
100
1,40 $
140,00 $
250
1,13 $
282,50 $
500
1,09 $
545,00 $
1000
0,90 $
900,00 $
2500
0,76 $
1 887,50 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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