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IPB108N15N3GATMA1

IPB108N15N3GATMA1
Mfr. #:
IPB108N15N3GATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET MV POWER MOS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB108N15N3GATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Aufbau:
Single
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Produktart:
MOSFET
Unterkategorie:
MOSFETs
Teil # Aliase:
G IPB108N15N3 IPB18N15N3GXT SP000677862
Gewichtseinheit:
0.139332 oz
Tags
IPB108N15N3G, IPB108, IPB10, IPB1, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 150 V 10.8 mOhm 41 nC OptiMOS™ Power Mosfet - D2PAK
***ow.cn
Trans MOSFET N-CH 150V 83A Automotive 3-Pin(2+Tab) D2PAK T/R
***ineon SCT
The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor, PG-TO263-3, RoHS
***ineon
The 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V8 0V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
Teil # Mfg. Beschreibung Aktie Preis
IPB108N15N3GATMA1
DISTI # V72:2272_06378661		Infineon Technologies AGTrans MOSFET N-CH 150V 83A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
    IPB108N15N3GATMA1
    DISTI # V36:1790_06378661    		Infineon Technologies AGTrans MOSFET N-CH 150V 83A Automotive 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		0
    • 1000000:$2.1480
    • 500000:$2.1510
    • 100000:$2.3420
    • 10000:$2.6590
    • 1000:$2.7110
    IPB108N15N3GATMA1
    DISTI # IPB108N15N3GATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 150V 83A TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		7116In Stock
    • 500:$2.7588
    • 100:$3.2408
    • 10:$3.9550
    • 1:$4.4000
    IPB108N15N3GATMA1
    DISTI # IPB108N15N3GATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 150V 83A TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		7116In Stock
    • 500:$2.7588
    • 100:$3.2408
    • 10:$3.9550
    • 1:$4.4000
    IPB108N15N3GATMA1
    DISTI # IPB108N15N3GATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 150V 83A TO263-3
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		7000In Stock
    • 2000:$2.1460
    • 1000:$2.2590
    IPB108N15N3GXT
    DISTI # IPB108N15N3GATMA1    		Infineon Technologies AGTrans MOSFET N-CH 150V 83A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB108N15N3GATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 0
    • 6000:$1.8900
    • 10000:$1.8900
    • 4000:$1.9900
    • 2000:$2.0900
    • 1000:$2.1900
    IPB108N15N3GATMA1
    DISTI # 85X6017    		Infineon Technologies AGMOSFET Transistor, N Channel, 83 A, 150 V, 0.0091 ohm, 10 V, 3 V RoHS Compliant: Yes862
    • 500:$2.5800
    • 250:$2.8700
    • 100:$3.0200
    • 50:$3.1700
    • 25:$3.3300
    • 10:$3.4800
    • 1:$4.1000
    IPB108N15N3 G
    DISTI # 726-IP726-B108N15N3G    		Infineon Technologies AGMOSFET N-Ch 150V 83A D2PAK-2 OptiMOS 3
    RoHS: Compliant    		1489
    • 1:$4.0600
    • 10:$3.4500
    • 100:$2.9900
    • 250:$2.8400
    • 500:$2.5500
    • 1000:$2.1500
    • 2000:$2.0400
    IPB108N15N3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 83A I(D), 150V, 0.0108ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant    		625
    • 1000:$1.8200
    • 500:$1.9100
    • 100:$1.9900
    • 25:$2.0800
    • 1:$2.2400
    IPB108N15N3GATMA1
    DISTI # 2443383    		Infineon Technologies AGMOSFET, N CH, 150V, 83A, TO-263-3
    RoHS: Compliant    		862
    • 1000:$3.2400
    • 500:$3.8400
    • 250:$4.2800
    • 100:$4.5100
    • 10:$5.2000
    • 1:$6.1200
    IPB108N15N3GATMA1
    DISTI # 2443383RL    		Infineon Technologies AGMOSFET, N CH, 150V, 83A, TO-263-3
    RoHS: Compliant    		0
    • 1000:$3.2400
    • 500:$3.8400
    • 250:$4.2800
    • 100:$4.5100
    • 10:$5.2000
    • 1:$6.1200
    IPB108N15N3GATMA1
    DISTI # 2443383    		Infineon Technologies AGMOSFET, N CH, 150V, 83A, TO-263-3892
    • 500:£1.9700
    • 250:£2.1900
    • 100:£2.3000
    • 10:£2.6600
    • 1:£3.5000
    Bild Teil # Beschreibung
    IPB108N15N3 G

    Mfr.#: IPB108N15N3 G

    OMO.#: OMO-IPB108N15N3-G

    		 MOSFET N-Ch 150V 83A D2PAK-2 OptiMOS 3
    IPB108N15N3GATMA1

    Mfr.#: IPB108N15N3GATMA1

    OMO.#: OMO-IPB108N15N3GATMA1

    		 MOSFET MV POWER MOS
    IPB108N15N3G 108N15N

    Mfr.#: IPB108N15N3G 108N15N

    OMO.#: OMO-IPB108N15N3G-108N15N-1190

    		 Neu und Original
    IPB108N15N3

    Mfr.#: IPB108N15N3

    OMO.#: OMO-IPB108N15N3-1190

    		 Neu und Original
    IPB108N15N3 G

    Mfr.#: IPB108N15N3 G

    OMO.#: OMO-IPB108N15N3-G-1190

    		 Trans MOSFET N-CH 150V 83A 3-Pin TO-263 T/R (Alt: IPB108N15N3 G)
    IPB108N15N3G

    Mfr.#: IPB108N15N3G

    OMO.#: OMO-IPB108N15N3G-1190

    		 Power Field-Effect Transistor, 83A I(D), 150V, 0.0108ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    IPB108N15N3GATMA1

    Mfr.#: IPB108N15N3GATMA1

    OMO.#: OMO-IPB108N15N3GATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 150V 83A TO263-3
    IPB108N15N3GS

    Mfr.#: IPB108N15N3GS

    OMO.#: OMO-IPB108N15N3GS-1190

    		 Neu und Original
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5000
    Menge eingeben:
    Der aktuelle Preis von IPB108N15N3GATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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