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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| IPB108N15N3GATMA1 DISTI # IPB108N15N3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 150V 83A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 6000In Stock |
|
| IPB108N15N3GATMA1 DISTI # IPB108N15N3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 150V 83A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 6000In Stock |
|
| IPB108N15N3GATMA1 DISTI # IPB108N15N3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 150V 83A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | 5000In Stock |
|
| IPB108N15N3 G DISTI # IPB108N15N3 G | Infineon Technologies AG | Trans MOSFET N-CH 150V 83A 3-Pin TO-263 T/R (Alt: IPB108N15N3 G) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel | Asia - 0 | |
| IPB108N15N3 G DISTI # SP000677862 | Infineon Technologies AG | Trans MOSFET N-CH 150V 83A 3-Pin TO-263 T/R (Alt: SP000677862) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel | Europe - 0 |
|
| IPB108N15N3 G DISTI # SP000677862 | Infineon Technologies AG | Trans MOSFET N-CH 150V 83A 3-Pin TO-263 T/R (Alt: SP000677862) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel | Europe - 0 |
|
| IPB108N15N3GXT DISTI # IPB108N15N3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 150V 83A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB108N15N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel | Americas - 0 |
|
| IPB108N15N3GATMA1 DISTI # 85X6017 | Infineon Technologies AG | MOSFET Transistor, N Channel, 83 A, 150 V, 0.0091 ohm, 10 V, 3 V RoHS Compliant: Yes | 44 |
|
| IPB108N15N3 G DISTI # 726-IP726-B108N15N3G | Infineon Technologies AG | MOSFET N-Ch 150V 83A D2PAK-2 OptiMOS 3 RoHS: Compliant | 2113 |
|
| IPB108N15N3G | Infineon Technologies AG | Power Field-Effect Transistor, 83A I(D), 150V, 0.0108ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 5125 |
|
| IPB108N15N3GATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 83A I(D), 150V, 0.0108ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 625 |
|
| IPB108N15N3GATMA1 DISTI # 2443383RL | Infineon Technologies AG | MOSFET, N CH, 150V, 83A, TO-263-3 RoHS: Compliant | 0 |
|
| IPB108N15N3GATMA1 DISTI # 2443383 | Infineon Technologies AG | MOSFET, N CH, 150V, 83A, TO-263-3 RoHS: Compliant | 26 |
|
| IPB108N15N3G | Infineon Technologies AG | 150V,83A,N Channel Power MOSFET | 30 |
|
| IPB108N15N3GATMA1 DISTI # 2443383 | Infineon Technologies AG | MOSFET, N CH, 150V, 83A, TO-263-3 RoHS: Compliant | 44 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: IPB108N15N3 G OMO.#: OMO-IPB108N15N3-G |
MOSFET N-Ch 150V 83A D2PAK-2 OptiMOS 3 |
|
|
Mfr.#: IPB108N15N3GATMA1 OMO.#: OMO-IPB108N15N3GATMA1 |
MOSFET MV POWER MOS |
|
Mfr.#: IPB108N15N3G 108N15N |
Neu und Original |
|
|
Mfr.#: IPB108N15N3 OMO.#: OMO-IPB108N15N3-1190 |
Neu und Original |
|
|
Mfr.#: IPB108N15N3 G OMO.#: OMO-IPB108N15N3-G-1190 |
Trans MOSFET N-CH 150V 83A 3-Pin TO-263 T/R (Alt: IPB108N15N3 G) |
|
|
Mfr.#: IPB108N15N3G OMO.#: OMO-IPB108N15N3G-1190 |
Power Field-Effect Transistor, 83A I(D), 150V, 0.0108ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
Mfr.#: IPB108N15N3GATMA1 |
MOSFET N-CH 150V 83A TO263-3 |
|
|
Mfr.#: IPB108N15N3GS OMO.#: OMO-IPB108N15N3GS-1190 |
Neu und Original |
