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IPD30N06S215ATMA2

IPD30N06S215ATMA2
Mfr. #:
IPD30N06S215ATMA2
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 55V 30A TO252-3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD30N06S215ATMA2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Verpackung
Spule
Teil-Aliasnamen
IPD30N06S2-15 SP001061724
Gewichtseinheit
0.139332 oz
Montageart
SMD/SMT
Paket-Koffer
TO-252-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
136 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
19 ns
Anstiegszeit
28 ns
Vgs-Gate-Source-Spannung
+/- 20 V
ID-Dauer-Drain-Strom
30 A
Vds-Drain-Source-Breakdown-Voltage
55 V
Vgs-th-Gate-Source-Threshold-Voltage
3 V
Rds-On-Drain-Source-Widerstand
11.3 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
32 ns
Typische-Einschaltverzögerungszeit
13 ns
Qg-Gate-Ladung
41 nC
Vorwärts-Transkonduktanz-Min
-
Kanal-Modus
Erweiterung
Tags
IPD30N06S215A, IPD30N06S21, IPD30N06S2, IPD30N06S, IPD30N06, IPD30N0, IPD30N, IPD30, IPD3, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 55 V 14.7 mOhm 110 nC OptiMOS® Power-Transistor - PG-TO252-3-11
***ark
Mosfet Transistor, N Channel, 30 A, 55 V, 0.0113 Ohm, 10 V, 3 V
***ical
Trans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
Teil # Mfg. Beschreibung Aktie Preis
IPD30N06S215ATMA2
DISTI # V72:2272_06384725		Infineon Technologies AGTrans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2435
  • 75000:$0.4069
  • 30000:$0.4111
  • 15000:$0.4153
  • 6000:$0.4194
  • 3000:$0.4237
  • 1000:$0.4492
  • 500:$0.5506
  • 250:$0.6002
  • 100:$0.6212
  • 50:$0.7239
  • 25:$0.7557
  • 10:$0.7880
  • 1:$0.8982
IPD30N06S215ATMA2
DISTI # IPD30N06S215ATMA2CT-ND		Infineon Technologies AGMOSFET N-CH 55V 30A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2882In Stock
  • 1000:$0.5741
  • 500:$0.7272
  • 100:$0.9377
  • 10:$1.1860
  • 1:$1.3400
IPD30N06S215ATMA2
DISTI # IPD30N06S215ATMA2DKR-ND		Infineon Technologies AGMOSFET N-CH 55V 30A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2882In Stock
  • 1000:$0.5741
  • 500:$0.7272
  • 100:$0.9377
  • 10:$1.1860
  • 1:$1.3400
IPD30N06S215ATMA2
DISTI # IPD30N06S215ATMA2TR-ND		Infineon Technologies AGMOSFET N-CH 55V 30A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 2500:$0.5202
IPD30N06S215ATMA2
DISTI # 20128351		Infineon Technologies AGTrans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		17500
  • 2500:$0.5221
IPD30N06S215ATMA2
DISTI # 28976053		Infineon Technologies AGTrans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2435
  • 1000:$0.4492
  • 500:$0.5506
  • 250:$0.6002
  • 100:$0.6212
  • 50:$0.7239
  • 25:$0.7557
  • 15:$0.7880
IPD30N06S215ATMA2
DISTI # IPD30N06S215ATMA2		Infineon Technologies AGTrans MOSFET N-CH 55V 30A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD30N06S215ATMA2)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.4859
  • 5000:$0.4689
  • 10000:$0.4519
  • 15000:$0.4369
  • 25000:$0.4289
IPD30N06S215ATMA2
DISTI # SP001061724		Infineon Technologies AGTrans MOSFET N-CH 55V 30A 3-Pin TO-252 T/R (Alt: SP001061724)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 2500:€0.7539
  • 5000:€0.5879
  • 10000:€0.5259
  • 15000:€0.4779
  • 25000:€0.4479
IPD30N06S215ATMA2
DISTI # 34AC1670		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 55V, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.0113ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes2470
  • 1:$1.1100
  • 10:$0.9460
  • 25:$0.8730
  • 50:$0.8000
  • 100:$0.7270
  • 250:$0.6850
  • 500:$0.6420
  • 1000:$0.5070
IPD30N06S215ATMA2
DISTI # 726-IPD30N06S215ATM2		Infineon Technologies AGMOSFET N-CHANNEL_55/60V
RoHS: Compliant		4979
  • 1:$1.1100
  • 10:$0.9460
  • 100:$0.7270
  • 500:$0.6420
  • 1000:$0.5070
  • 2500:$0.4500
IPD30N06S215ATMA2
DISTI # 2781082		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 55V, TO-252
RoHS: Compliant		2470
  • 5:£0.8060
  • 25:£0.7230
  • 100:£0.5560
  • 250:£0.5240
  • 500:£0.4910
IPD30N06S215ATMA2
DISTI # 2781082		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 55V, TO-252
RoHS: Compliant		2470
  • 5:$1.6600
  • 25:$1.4400
  • 100:$1.1800
  • 250:$0.9950
  • 500:$0.8610
  • 1000:$0.8140
  • 5000:$0.7720
IPD30N06S215ATMA2
DISTI # C1S322000624456		Infineon Technologies AGTrans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2435
  • 100:$0.5701
  • 50:$0.6334
  • 25:$0.7038
  • 10:$0.7821
IPD30N06S215ATMA2
DISTI # C1S322000610532		Infineon Technologies AGTrans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		17500
  • 2500:$0.5630
Bild Teil # Beschreibung
IPD30N06S2L13ATMA4

Mfr.#: IPD30N06S2L13ATMA4

OMO.#: OMO-IPD30N06S2L13ATMA4

 MOSFET N-CHANNEL_55/60V
IPD30N06S4L23ATMA2

Mfr.#: IPD30N06S4L23ATMA2

OMO.#: OMO-IPD30N06S4L23ATMA2

 MOSFET MOSFET
IPD30N06S215ATMA2

Mfr.#: IPD30N06S215ATMA2

OMO.#: OMO-IPD30N06S215ATMA2

 MOSFET N-CHANNEL_55/60V
IPD30N06S2L23ATMA1

Mfr.#: IPD30N06S2L23ATMA1

OMO.#: OMO-IPD30N06S2L23ATMA1

 MOSFET N-Ch 55V 30A DPAK-2 OptiMOS
IPD30N06S2-15 2N0615

Mfr.#: IPD30N06S2-15 2N0615

OMO.#: OMO-IPD30N06S2-15-2N0615-1190

 Neu und Original
IPD30N06S4L23ATMA1

Mfr.#: IPD30N06S4L23ATMA1

OMO.#: OMO-IPD30N06S4L23ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 60V 30A TO252-3
IPD30N06S2

Mfr.#: IPD30N06S2

OMO.#: OMO-IPD30N06S2-1190

 Neu und Original
IPD30N06S2-23

Mfr.#: IPD30N06S2-23

OMO.#: OMO-IPD30N06S2-23-1190

 MOSFET N-Ch 55V 30A DPAK-2 OptiMOS
IPD30N06S215

Mfr.#: IPD30N06S215

OMO.#: OMO-IPD30N06S215-1190

 Neu und Original
IPD30N06S4L-23

Mfr.#: IPD30N06S4L-23

OMO.#: OMO-IPD30N06S4L-23-1190

 MOSFET N-Ch 60V 30A DPAK-2 OptiMOS-T2
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1000
Menge eingeben:
Der aktuelle Preis von IPD30N06S215ATMA2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,61 $
0,61 $
10
0,58 $
5,80 $
100
0,55 $
54,93 $
500
0,52 $
259,40 $
1000
0,49 $
488,30 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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