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STGW60H65DFB-4

STGW60H65DFB-4
Mfr. #:
STGW60H65DFB-4
Hersteller:
STMicroelectronics
Beschreibung:
IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STGW60H65DFB-4 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STGW60H65DFB-4 Mehr Informationen STGW60H65DFB-4 Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
IGBT-Transistoren
Technologie:
Si
Paket / Koffer:
TO-247-4
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
650 V
Kollektor-Emitter-Sättigungsspannung:
1.6 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
80 A
Pd - Verlustleistung:
283 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
STGW60H65DFB-4
Marke:
STMicroelectronics
Gate-Emitter-Leckstrom:
250 uA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
600
Unterkategorie:
IGBTs
Tags
STGW60H65DF, STGW60H65D, STGW60H65, STGW60H, STGW6, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trench gate field-stop IGBT, HB series650 V, 60 A high speed
***et Europe
PTD HIGH VOLTAGE
***ark
IGBT, SINGLE, 650V, 80A, TO-247; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:375W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:4Pins; RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, SINGLE, 650V, 80A, TO-247; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:375W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:4Pins; Operating Temperature Max:175°C; Product Range:HB Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (07-Jul-2017)
***nell
TBGI, SINGOLO, 650V, 80A, TO-247; Corrente di Collettore CC:80A; Tensione Saturaz Collettore-Emettitore Vce(on):1.6V; Dissipazione di Potenza Pd:375W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-247; No. di Pin:4Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:HB Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (07-Jul-2017)
Teil # Mfg. Beschreibung Aktie Preis
STGW60H65DFB-4
DISTI # STGW60H65DFB-4-ND		STMicroelectronicsIGBT
RoHS: Not compliant
Min Qty: 600
Container: Tube		Temporarily Out of Stock
  • 600:$5.6963
STGW60H65DFB-4
DISTI # STGW60H65DFB-4		STMicroelectronicsPTD HIGH VOLTAGE (Alt: STGW60H65DFB-4)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 500:€4.5900
  • 1000:€4.5900
  • 100:€4.6900
  • 50:€4.7900
  • 25:€4.8900
  • 10:€5.0900
  • 1:€5.1900
STGW60H65DFB-4
DISTI # STGW60H65DFB-4		STMicroelectronicsPTD HIGH VOLTAGE - Trays (Alt: STGW60H65DFB-4)
RoHS: Compliant
Min Qty: 600
Container: Tray		Americas - 0
  • 6000:$4.1900
  • 3000:$4.2900
  • 1800:$4.3900
  • 1200:$4.4900
  • 600:$4.5900
STGW60H65DFB-4
DISTI # 48AC3296		STMicroelectronicsPTD HIGH VOLTAGE0
  • 1:$4.3800
STGW60H65DFB-4
DISTI # 511-STGW60H65DFB-4		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 60 A high speed0
  • 1:$8.3300
  • 10:$7.5300
  • 25:$7.1800
  • 100:$6.2300
  • 250:$5.9600
  • 500:$5.4300
  • 1000:$4.7300
STGW60H65DFB-4
DISTI # 2778105		STMicroelectronicsIGBT, SINGLE, 650V, 80A, TO-247
RoHS: Compliant		74
  • 250:$7.3700
  • 100:$7.9000
  • 50:$8.8700
  • 10:$9.8800
  • 5:$11.1400
  • 1:$12.7800
STGW60H65DFB-4
DISTI # 2778105		STMicroelectronicsIGBT, SINGLE, 650V, 80A, TO-24774
  • 100:£4.5100
  • 50:£4.8600
  • 10:£5.2100
  • 5:£5.6200
  • 1:£6.0300
Bild Teil # Beschreibung
STGW60H65FB

Mfr.#: STGW60H65FB

OMO.#: OMO-STGW60H65FB

 IGBT Transistors 650V 60A Trench Gate Field-Stop IGBT
STGW60H65DRF

Mfr.#: STGW60H65DRF

OMO.#: OMO-STGW60H65DRF

 IGBT Transistors 60A 650V Field Stop Trench Gate IBGT
STGW60H65DF

Mfr.#: STGW60H65DF

OMO.#: OMO-STGW60H65DF

 IGBT Transistors 60 A 650V Field Stop Trench Gate IGBT
STGW60H65DFB-4

Mfr.#: STGW60H65DFB-4

OMO.#: OMO-STGW60H65DFB-4

 IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
STGW60H65F

Mfr.#: STGW60H65F

OMO.#: OMO-STGW60H65F

 IGBT Transistors 60A 650V FST IGBT Very High Switching
STGW60H65FB

Mfr.#: STGW60H65FB

OMO.#: OMO-STGW60H65FB-STMICROELECTRONICS

 IGBT 650V 80A 375W TO247
STGW60H65DFB

Mfr.#: STGW60H65DFB

OMO.#: OMO-STGW60H65DFB-STMICROELECTRONICS

 IGBT 650V 80A 375W TO-247
STGW60H65F

Mfr.#: STGW60H65F

OMO.#: OMO-STGW60H65F-STMICROELECTRONICS

 IGBT Transistors 60A 650V FST IGBT Very High Switching
STGW60H60DLFB

Mfr.#: STGW60H60DLFB

OMO.#: OMO-STGW60H60DLFB-STMICROELECTRONICS

 IGBT 600V 80A 375W TO-247
STGW60H65DFB-4

Mfr.#: STGW60H65DFB-4

OMO.#: OMO-STGW60H65DFB-4-STMICROELECTRONICS

 PTD HIGH VOLTAGE (Alt: STGW60H65DFB-4)
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2000
Menge eingeben:
Der aktuelle Preis von STGW60H65DFB-4 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
8,33 $
8,33 $
10
7,53 $
75,30 $
25
7,18 $
179,50 $
100
6,23 $
623,00 $
250
5,96 $
1 490,00 $
500
5,43 $
2 715,00 $
1000
4,73 $
4 730,00 $
2500
4,56 $
11 400,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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