SIHFIB16N50K-E3

Mfr. #:: SIHFIB16N50K-E3
Hersteller:: Vishay / Siliconix
Beschreibung:: MOSFET 500V 6.7A 45W 350mohm @ 10V
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SIHFIB16N50K-E3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: SIHFIB16N50K-E3 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Vishay

Produktkategorie:: MOSFET

RoHS:: E

Technologie:: Si

Montageart:: Durchgangsloch

Paket / Koffer:: TO-220FP-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 100 V

Id - Kontinuierlicher Drainstrom:: 17 A

Rds On - Drain-Source-Widerstand:: 77 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 4 V

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 72 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 175 C

Pd - Verlustleistung:: 48 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Verpackung:: Rohr

Höhe:: 15.49 mm

Länge:: 10.41 mm

Serie:: E

Breite:: 4.7 mm

Marke:: Vishay / Siliconix

Abfallzeit:: 43 ns

Produktart:: MOSFET

Anstiegszeit:: 44 ns

Werkspackungsmenge:: 50

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 53 ns

Typische Einschaltverzögerungszeit:: 11 ns

Gewichtseinheit:: 0.211644 oz

Tags: SIHFIB1, SIHFIB, SIHFI, SIHF, SIH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIHFIB16N50K-E3 Beschreibung

***et: Trans MOSFET N-CH 500V 6.7A 3-Pin(3+Tab) TO-220 Full-Pack

***ark: Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:6.7A; Drain Source Voltage, Vds:500V; On Resistance, Rds(on):0.29ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:5V ;RoHS Compliant: Yes

SIHFIB16N50K-E3 Mehr Informationen

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

E Series High Voltage MOSFETs: Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SIHFIB16N50K-E3 DISTI # SIHFIB16N50K-E3	Vishay Intertechnologies	Trans MOSFET N-CH 500V 6.7A 3-Pin(3+Tab) TO-220 Full-Pack - Rail/Tube (Alt: SIHFIB16N50K-E3) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	1000:$2.9900 2000:$2.8900 4000:$2.7900 6000:$2.6900 10000:$2.5900
SIHFIB16N50K-E3 DISTI # 781-SIHFIB16N50K-E3	Vishay Intertechnologies	MOSFET 500V 6.7A 45W 350mohm @ 10V RoHS: Compliant	0	1000:$2.9300

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: SIHFIB16N50K-E3 OMO.#: OMO-SIHFIB16N50K-E3	MOSFET 500V 6.7A 45W 350mohm @ 10V
	Mfr.#: SIHFIB16N50K-E3 OMO.#: OMO-SIHFIB16N50K-E3-317	RF Bipolar Transistors MOSFET 500V 6.7A 45W 350mohm @ 10V
	Mfr.#: SIHFIB11N50A OMO.#: OMO-SIHFIB11N50A-1190	Neu und Original
	Mfr.#: SIHFIB11N50A,SIHFIB11N50 OMO.#: OMO-SIHFIB11N50A-SIHFIB11N50-1190	Neu und Original
	Mfr.#: SIHFIB11N50A-E3 OMO.#: OMO-SIHFIB11N50A-E3-1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1500
Menge eingeben:

Der aktuelle Preis von SIHFIB16N50K-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1000: ~~2,92 $~~; ~~2 920,00 $~~

3000: ~~2,78 $~~; ~~8 340,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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SIHFIB16N50K-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes