SIHF

SIHF065N60E-GE3 vs SIHF12N50C-E3 vs SIHF10N40D-E3

 
PartNumberSIHF065N60E-GE3SIHF12N50C-E3SIHF10N40D-E3
DescriptionMOSFET 650V Vds; 30V Vgs TO-220MOSFET N-Channel 500VMOSFET 400V Vds 30V Vgs TO-220 FULLPAK
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220FP-3TO-220FP-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V560 V400 V
Id Continuous Drain Current40 A12 A10 A
Rds On Drain Source Resistance65 mOhms555 mOhms600 mOhms
Vgs th Gate Source Threshold Voltage3 V5 V5 V
Vgs Gate Source Voltage30 V30 V30 V
Qg Gate Charge74 nC32 nC15 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation39 W36 W33 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingTubeTubeTube
SeriesE-D
Transistor Type1 N-Channel--
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min12 S--
Fall Time13 ns6 ns14 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time46 ns35 ns18 ns
Factory Pack Quantity505050
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time54 ns23 ns18 ns
Typical Turn On Delay Time28 ns18 ns12 ns
Height-15.49 mm15.9 mm
Length-10.41 mm10.5 mm
Width-4.7 mm4.69 mm
Unit Weight-0.211644 oz0.211644 oz
Hersteller Teil # Beschreibung RFQ
Vishay / Siliconix
Vishay / Siliconix
SIHF065N60E-GE3 MOSFET 650V Vds; 30V Vgs TO-220
SIHF12N50C-E3 MOSFET N-Channel 500V
SIHF22N60E-GE3 MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
SIHF12N65E-GE3 MOSFET 650V Vds 30V Vgs TO-220 FULLPAK
SIHF12N60E-E3 MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
SIHF18N50D-E3 MOSFET 500V Vds 30V Vgs TO-220 FULLPAK
SIHF15N60E-GE3 MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
SIHF10N40D-E3 MOSFET 400V Vds 30V Vgs TO-220 FULLPAK
SIHF23N60E-GE3 MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
SIHF15N65E-GE3 MOSFET 650V Vds 30V Vgs TO-220 FULLPAK
SIHF22N65E-GE3 MOSFET 650V Vds 30V Vgs TO-220 FULLPAK
SIHF15N60E-E3 MOSFET RECOMMENDED ALT 78-SI7149ADP-T1-GE3
SIHF16N50C-E3 MOSFET N-Channel 500V
SIHF22N60E-E3 MOSFET RECOMMENDED ALT 781-SIR462DP-T1-GE3
SIHF12N60E-GE3 MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
Vishay
Vishay
SIHF16N50C-E3 IGBT Transistors MOSFET N-Channel 500V
SIHF12N60E-GE3 IGBT Transistors MOSFET 600V 380mOhms@10V 12A N-Ch E-SRS
SIHF12N65E-GE3 IGBT Transistors MOSFET 650V 392Ohm@10V 12A N-Ch E-SRS
SIHF22N60E-E3 IGBT Transistors MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS
SIHF15N60E-E3 IGBT Transistors MOSFET 600V 280mOhm@10V 15A N-Ch E-SRS
SIHF12N50C-E3 RF Bipolar Transistors MOSFET N-Channel 500V
SIHF22N65E-GE3 RF Bipolar Transistors MOSFET 650V 180mOhm@10V 22A N-Ch E-SRS
SIHF22N60E-GE3 RF Bipolar Transistors MOSFET 600V 180mOhms@10V 21A N-Ch E-SRS
SIHF15N65E-GE3 RF Bipolar Transistors MOSFET 650V 280mOhm@10V 15A N-Ch E-SRS
SIHF23N60E-GE3 RF Bipolar Transistors MOSFET 600V 158mOhm@10V 23A N-Ch E-SRS
SIHF15N60E-GE3 RF Bipolar Transistors MOSFET 600V 280mOhms@10V 15A N-Ch E-SRS
SIHF18N50D-E3 RF Bipolar Transistors MOSFET 500V 280mOhm@10V 18A N-Ch D-SRS
SIHF10N40D-E3 MOSFET N-CH 400V 10A TO-220 FPAK
SIHF12N60E-E3 MOSFET N-CH 600V 12A TO220 FULLP
SIHF18N50C-E3 MOSFET N-CH 500V 18A TO220
SIHF065N60E-GE3 EF Series Power MOSFET TO-220 FULLPAK, 65 m @ 10V
SIHF22N60S-E3 IGBT Transistors MOSFET 600V N-Channel Super junction TO-220FP
SIHF10N40D Neu und Original
SIHF122N50C-E3 Neu und Original
SIHF12N60E Neu und Original
SIHF12N60EGE3 Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
SIHF12N65E Neu und Original
SIHF15N60E Neu und Original
SIHF15N60E,SIHF15N60E-EG Neu und Original
SIHF15N60E,SIHF15N60E-GE Neu und Original
SIHF15N60E,SIHFIB9N60A-E Neu und Original
SIHF15N60E-E3/GE3 Neu und Original
SIHF15N60E-EG3 Neu und Original
SIHF15N60EGE3 Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
SIHF16N50C Neu und Original
SIHF18N50D Power Field-Effect Transistor, 18A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
SIHF22N60 Neu und Original
SIHF22N60E Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
SIHF22N65E Neu und Original
SIHF22N6OE-E3 Neu und Original
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