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SIHF12N60E-GE3

SIHF12N60E-GE3
Mfr. #:
SIHF12N60E-GE3
Hersteller:
Vishay
Beschreibung:
IGBT Transistors MOSFET 600V 380mOhms@10V 12A N-Ch E-SRS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHF12N60E-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
SIHF12N60, SIHF12N6, SIHF12N, SIHF12, SIHF1, SIHF, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
E Series N-Channel 600 V 0.38 O 58 nC Flange Mount Power Mosfet - TO-220FP
***ical
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP
***et Europe
Trans MOSFET N-CH 600V 12A 3-Pin TO-220FP
***ark
MOSFET, N-CH, 600V, 12A, TO-220FP
***i-Key
MOSFET N-CH 600V 12A TO220 FULLP
***ronik
N-CH 650V 12A 380mOhm TO220-3
***
N-CH 600V TO220 FULLPK
***nell
MOSFET, N-CH, 600V, 12A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.32ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:33W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; MSL:MSL 1 - Unlimited
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 12A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.32ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:33W; Transistor Case Style:TO-220FP; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Operating Temperature Min:-55°C
Teil # Mfg. Beschreibung Aktie Preis
SIHF12N60E-GE3
DISTI # V72:2272_09218848		Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP1000
  • 75000:$1.3330
  • 30000:$1.3470
  • 15000:$1.3620
  • 6000:$1.3759
  • 3000:$1.3900
  • 1000:$1.4040
  • 500:$1.4150
  • 250:$1.5870
  • 100:$1.6040
  • 50:$1.8590
  • 25:$2.0050
  • 10:$2.0280
  • 1:$2.3630
SIHF12N60E-GE3
DISTI # SIHF12N60E-GE3CT-ND		Vishay SiliconixMOSFET N-CH 600V 12A TO220 FULLP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		962In Stock
  • 500:$1.8043
  • 100:$2.3198
  • 10:$2.8870
  • 1:$3.2000
SIHF12N60E-GE3
DISTI # SIHF12N60E-GE3TR-ND		Vishay SiliconixMOSFET N-CH 600V 12A TO220 FULLP
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$1.4514
SIHF12N60E-GE3
DISTI # 25790517		Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP1000
  • 1000:$1.4040
  • 500:$1.4150
  • 250:$1.5870
  • 100:$1.6040
  • 50:$1.8590
  • 25:$2.0050
  • 10:$2.0280
  • 5:$2.3630
SIHF12N60E-GE3
DISTI # SIHF12N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin TO-220FP - Tape and Reel (Alt: SIHF12N60E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$1.2900
  • 2000:$1.1900
  • 4000:$1.1900
  • 6000:$1.0900
  • 10000:$1.0900
SIHF12N60E-GE3
DISTI # 19X1934		Vishay IntertechnologiesMOSFET Transistor, N Channel, 12 A, 600 V, 0.32 ohm, 10 V, 2 V RoHS Compliant: Yes595
  • 1:$2.8300
  • 10:$2.3500
  • 25:$2.1700
  • 50:$2.0000
  • 100:$1.8200
  • 500:$1.6000
SIHF12N60E-GE3
DISTI # 78-SIHF12N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220 FULLPAK
RoHS: Compliant		825
  • 1:$2.8300
  • 10:$2.3500
  • 100:$1.8200
  • 500:$1.6000
SIHF12N60E-E3
DISTI # 781-SIHF12N60E-E3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220 FULLPAK
RoHS: Compliant		782
  • 1:$2.8300
  • 10:$2.3500
  • 100:$1.8200
  • 500:$1.6000
SIHF12N60EGE3Vishay IntertechnologiesPower Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		Europe - 500
    SIHF12N60EGE3Vishay Intertechnologies 
    RoHS: Compliant    		Europe - 500
      SIHF12N60E-GE3
      DISTI # 2364076      		Vishay IntertechnologiesMOSFET, N-CH, 600V, 12A, TO-220FP
      RoHS: Compliant      		595
      • 1:$4.4800
      • 10:$3.7200
      • 100:$2.8800
      • 500:$2.5400
      SIHF12N60E-GE3
      DISTI # 2364076      		Vishay IntertechnologiesMOSFET, N-CH, 600V, 12A, TO-220FP
      RoHS: Compliant      		611
      • 1:£2.7200
      • 10:£1.9000
      • 100:£1.4700
      • 250:£1.3900
      • 500:£1.2900
      SIHF12N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220 FULLPAK
      RoHS: Compliant      		Americas -
        SIHF12N60E-E3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220 FULLPAK
        RoHS: Compliant        		Americas -
          SIHF12N60E-GE3
          DISTI # C1S803601752554          		Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220 Full-Pak
          RoHS: Compliant          		1000
          • 100:$1.6040
          • 50:$1.8590
          • 25:$2.0050
          • 10:$2.0280
          • 1:$2.3630
          Bild Teil # Beschreibung
          SIHF12N50C-E3

          Mfr.#: SIHF12N50C-E3

          OMO.#: OMO-SIHF12N50C-E3

          		 MOSFET N-Channel 500V
          SIHF12N65E-GE3

          Mfr.#: SIHF12N65E-GE3

          OMO.#: OMO-SIHF12N65E-GE3

          		 MOSFET 650V Vds 30V Vgs TO-220 FULLPAK
          SIHF12N60E-E3

          Mfr.#: SIHF12N60E-E3

          OMO.#: OMO-SIHF12N60E-E3

          		 MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
          SIHF12N60E-GE3

          Mfr.#: SIHF12N60E-GE3

          OMO.#: OMO-SIHF12N60E-GE3

          		 MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
          SIHF12N60E-GE3

          Mfr.#: SIHF12N60E-GE3

          OMO.#: OMO-SIHF12N60E-GE3-VISHAY

          		 IGBT Transistors MOSFET 600V 380mOhms@10V 12A N-Ch E-SRS
          SIHF12N65E-GE3

          Mfr.#: SIHF12N65E-GE3

          OMO.#: OMO-SIHF12N65E-GE3-VISHAY

          		 IGBT Transistors MOSFET 650V 392Ohm@10V 12A N-Ch E-SRS
          SIHF12N60E

          Mfr.#: SIHF12N60E

          OMO.#: OMO-SIHF12N60E-1190

          		 Neu und Original
          SIHF12N60E-E3

          Mfr.#: SIHF12N60E-E3

          OMO.#: OMO-SIHF12N60E-E3-VISHAY

          		 MOSFET N-CH 600V 12A TO220 FULLP
          SIHF12N60EGE3

          Mfr.#: SIHF12N60EGE3

          OMO.#: OMO-SIHF12N60EGE3-1190

          		 Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
          SIHF12N65E

          Mfr.#: SIHF12N65E

          OMO.#: OMO-SIHF12N65E-1190

          		 Neu und Original
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          3500
          Menge eingeben:
          Der aktuelle Preis von SIHF12N60E-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
          Referenzpreis (USD)
          Menge
          Stückpreis
          ext. Preis
          1
          1,64 $
          1,64 $
          10
          1,55 $
          15,53 $
          100
          1,47 $
          147,15 $
          500
          1,39 $
          694,90 $
          1000
          1,31 $
          1 308,00 $
          Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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