PartNumber | SIHF12N50C-E3 | SIHF12N60E-E3 | SIHF10N40D-E3 |
Description | MOSFET N-Channel 500V | MOSFET 600V Vds 30V Vgs TO-220 FULLPAK | MOSFET 400V Vds 30V Vgs TO-220 FULLPAK |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220FP-3 | TO-220FP-3 | TO-220FP-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 560 V | 600 V | 400 V |
Id Continuous Drain Current | 12 A | 12 A | 10 A |
Rds On Drain Source Resistance | 555 mOhms | 380 mOhms | 600 mOhms |
Vgs th Gate Source Threshold Voltage | 5 V | 4 V | 5 V |
Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
Qg Gate Charge | 32 nC | 29 nC | 15 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 36 W | 33 W | 33 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | Tube | Tube |
Height | 15.49 mm | 15.49 mm | 15.9 mm |
Length | 10.41 mm | 10.41 mm | 10.5 mm |
Width | 4.7 mm | 4.7 mm | 4.69 mm |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Fall Time | 6 ns | 19 ns | 14 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 35 ns | 19 ns | 18 ns |
Factory Pack Quantity | 50 | 50 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 23 ns | 35 ns | 18 ns |
Typical Turn On Delay Time | 18 ns | 14 ns | 12 ns |
Unit Weight | 0.211644 oz | 0.211644 oz | 0.211644 oz |
Series | - | E | D |
Hersteller | Teil # | Beschreibung | RFQ |
---|---|---|---|
Vishay / Siliconix |
SIHF12N50C-E3 | MOSFET N-Channel 500V | |
SIHF12N65E-GE3 | MOSFET 650V Vds 30V Vgs TO-220 FULLPAK | ||
SIHF12N60E-E3 | MOSFET 600V Vds 30V Vgs TO-220 FULLPAK | ||
SIHF18N50D-E3 | MOSFET 500V Vds 30V Vgs TO-220 FULLPAK | ||
SIHF15N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-220 FULLPAK | ||
SIHF10N40D-E3 | MOSFET 400V Vds 30V Vgs TO-220 FULLPAK | ||
SIHF15N65E-GE3 | MOSFET 650V Vds 30V Vgs TO-220 FULLPAK | ||
SIHF15N60E-E3 | MOSFET RECOMMENDED ALT 78-SI7149ADP-T1-GE3 | ||
SIHF16N50C-E3 | MOSFET N-Channel 500V | ||
SIHF12N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-220 FULLPAK | ||
Vishay |
SIHF16N50C-E3 | IGBT Transistors MOSFET N-Channel 500V | |
SIHF12N60E-GE3 | IGBT Transistors MOSFET 600V 380mOhms@10V 12A N-Ch E-SRS | ||
SIHF12N65E-GE3 | IGBT Transistors MOSFET 650V 392Ohm@10V 12A N-Ch E-SRS | ||
SIHF15N60E-E3 | IGBT Transistors MOSFET 600V 280mOhm@10V 15A N-Ch E-SRS | ||
SIHF12N50C-E3 | RF Bipolar Transistors MOSFET N-Channel 500V | ||
SIHF15N65E-GE3 | RF Bipolar Transistors MOSFET 650V 280mOhm@10V 15A N-Ch E-SRS | ||
SIHF15N60E-GE3 | RF Bipolar Transistors MOSFET 600V 280mOhms@10V 15A N-Ch E-SRS | ||
SIHF18N50D-E3 | RF Bipolar Transistors MOSFET 500V 280mOhm@10V 18A N-Ch D-SRS | ||
SIHF10N40D-E3 | MOSFET N-CH 400V 10A TO-220 FPAK | ||
SIHF12N60E-E3 | MOSFET N-CH 600V 12A TO220 FULLP | ||
SIHF18N50C-E3 | MOSFET N-CH 500V 18A TO220 | ||
SIHF10N40D | Neu und Original | ||
SIHF122N50C-E3 | Neu und Original | ||
SIHF12N60E | Neu und Original | ||
SIHF12N60EGE3 | Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
SIHF12N65E | Neu und Original | ||
SIHF15N60E | Neu und Original | ||
SIHF15N60E,SIHF15N60E-EG | Neu und Original | ||
SIHF15N60E,SIHF15N60E-GE | Neu und Original | ||
SIHF15N60E,SIHFIB9N60A-E | Neu und Original | ||
SIHF15N60E-E3/GE3 | Neu und Original | ||
SIHF15N60E-EG3 | Neu und Original | ||
SIHF15N60EGE3 | Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
SIHF16N50C | Neu und Original | ||
SIHF18N50D | Power Field-Effect Transistor, 18A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |