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SIHF12N50C-E3

SIHF12N50C-E3
Mfr. #:
SIHF12N50C-E3
Hersteller:
Vishay
Beschreibung:
RF Bipolar Transistors MOSFET N-Channel 500V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHF12N50C-E3 Datenblatt
Die Zustellung:
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Zahlung:
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ECAD Model:
Mehr Informationen:
SIHF12N50C-E3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
VISHAY
Produktkategorie
FETs - Einzeln
Serie
E
Verpackung
Spule
Gewichtseinheit
0.211644 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-220-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
36 W
Maximale-Betriebstemperatur
+ 125 C
Mindest-Betriebstemperatur
- 55 C
Vgs-Gate-Source-Spannung
30 V
ID-Dauer-Drain-Strom
12 A
Vds-Drain-Source-Breakdown-Voltage
500 V
Rds-On-Drain-Source-Widerstand
460 mOhms
Transistor-Polarität
N-Kanal
Qg-Gate-Ladung
32 nC
Vorwärts-Transkonduktanz-Min
3 S
Tags
SIHF12N, SIHF12, SIHF1, SIHF, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SiHx12N50C-E3 500V N-Channel Power MOSFETs
Vishay Siliconix SiHx12N50C-E3 500V, 12A N-Channel Power MOSFETs with ultra-low 0.555-Ω maximum on-resistance at a 10V gate drive and an improved gate charge of 48nC. The low on-resistance of the Vishay Siliconix SiHP12N50C-E3 (TO-220 package), SiHF12N50C-E3 (TO-220 FULLPAK), and SiHB12N50C-E3 (D²PAK) translates into lower conduction losses that save energy in power factor correction (PFC) boost circuits, pulse width modulation (PWM) half bridges, and LLC topologies in a wide range of applications, including notebook computer AC adapters, PCs, LCD TVs, and open-frame power supplies. SiHx12N50C-E3 500V Power MOSFETs feature a gate charge of 48nC. Gate charge times on-resistance is a low 26.54Ω-nC. These Vishay Siliconix Power MOSFETs are produced using Vishay Planar Cell technology, which has been tailored to minimize on-state resistance and withstand high energy pulses in the avalanche and commutation mode. The SiHP12N50C-E3, SiHG12N50C-E3, and SiHB12N50C-E3 offer improved switching speed and conduction losses compared to previous-generation MOSFETs.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SIHF12N50C-E3
DISTI # SIHF12N50C-E3-ND		Vishay SiliconixMOSFET N-CH 500V 12A TO-220
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$2.9106
SIHF12N50C-E3
DISTI # SIHF12N50C-E3		Vishay IntertechnologiesTrans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220 Full-Pak - Tape and Reel (Alt: SIHF12N50C-E3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$2.6900
  • 2000:$2.5900
  • 4000:$2.4900
  • 6000:$2.3900
  • 10000:$2.3900
SIHF12N50C-E3
DISTI # 781-SIHF12N50C-E3		Vishay IntertechnologiesMOSFET N-Channel 500V
RoHS: Compliant		0
  • 1:$5.3000
  • 10:$4.3900
  • 100:$3.6100
  • 250:$3.5000
  • 500:$3.1400
  • 1000:$2.6500
  • 2500:$2.5200
SIHF12N50C-E3Vishay IntertechnologiesMOSFET N-Channel 500V
RoHS: Compliant		Americas -
    Bild Teil # Beschreibung
    SIHF12N50C-E3

    Mfr.#: SIHF12N50C-E3

    OMO.#: OMO-SIHF12N50C-E3

    		 MOSFET N-Channel 500V
    SIHF12N65E-GE3

    Mfr.#: SIHF12N65E-GE3

    OMO.#: OMO-SIHF12N65E-GE3

    		 MOSFET 650V Vds 30V Vgs TO-220 FULLPAK
    SIHF12N60E-E3

    Mfr.#: SIHF12N60E-E3

    OMO.#: OMO-SIHF12N60E-E3

    		 MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
    SIHF12N60E-GE3

    Mfr.#: SIHF12N60E-GE3

    OMO.#: OMO-SIHF12N60E-GE3

    		 MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
    SIHF12N50C-E3

    Mfr.#: SIHF12N50C-E3

    OMO.#: OMO-SIHF12N50C-E3-VISHAY

    		 RF Bipolar Transistors MOSFET N-Channel 500V
    SIHF122N50C-E3

    Mfr.#: SIHF122N50C-E3

    OMO.#: OMO-SIHF122N50C-E3-1190

    		 Neu und Original
    SIHF12N60E

    Mfr.#: SIHF12N60E

    OMO.#: OMO-SIHF12N60E-1190

    		 Neu und Original
    SIHF12N60E-E3

    Mfr.#: SIHF12N60E-E3

    OMO.#: OMO-SIHF12N60E-E3-VISHAY

    		 MOSFET N-CH 600V 12A TO220 FULLP
    SIHF12N60EGE3

    Mfr.#: SIHF12N60EGE3

    OMO.#: OMO-SIHF12N60EGE3-1190

    		 Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    SIHF12N65E

    Mfr.#: SIHF12N65E

    OMO.#: OMO-SIHF12N65E-1190

    		 Neu und Original
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    2500
    Menge eingeben:
    Der aktuelle Preis von SIHF12N50C-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    3,58 $
    3,58 $
    10
    3,41 $
    34,06 $
    100
    3,23 $
    322,65 $
    500
    3,05 $
    1 523,65 $
    1000
    2,87 $
    2 868,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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