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SIHF12N65E-GE3

SIHF12N65E-GE3
Mfr. #:
SIHF12N65E-GE3
Hersteller:
Vishay
Beschreibung:
IGBT Transistors MOSFET 650V 392Ohm@10V 12A N-Ch E-SRS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHF12N65E-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIHF12N65E-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SIHF12N6, SIHF12N, SIHF12, SIHF1, SIHF, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
E Series N Channel 650 V 380 mO 70 nC Flange Mount Power Mosfet - TO-220FP
***et
Trans MOSFET N-CH 650V 12A 3-Pin TO-220 Full-Pak
*** Europe
N-CH SINGLE 650V TO220FP
***ark
N-Channel 650V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Teil # Mfg. Beschreibung Aktie Preis
SIHF12N65E-GE3
DISTI # V36:1790_09218859		Vishay IntertechnologiesTrans MOSFET N-CH 650V 12A 3-Pin(3+Tab) TO-220 Full-Pak
RoHS: Compliant		0
  • 1000000:$1.1250
  • 500000:$1.1290
  • 100000:$1.5310
  • 10000:$2.2990
  • 1000:$2.4300
SIHF12N65E-GE3
DISTI # SIHF12N65E-GE3-ND		Vishay SiliconixMOSFET N-CH 650V 12A TO-220
Min Qty: 1
Container: Tube		831In Stock
  • 5000:$1.0973
  • 2500:$1.1138
  • 1000:$1.1963
  • 500:$1.4438
  • 100:$1.7573
  • 10:$2.1860
  • 1:$2.4300
SIHF12N65E-GE3
DISTI # SIHF12N65E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 12A 3-Pin TO-220 Full-Pak (Alt: SIHF12N65E-GE3)
Min Qty: 1		Europe - 44450
    SIHF12N65E-GE3
    DISTI # SIHF12N65E-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 650V 12A 3-Pin TO-220 Full-Pak - Tape and Reel (Alt: SIHF12N65E-GE3)
    RoHS: Not Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 0
    • 10000:$1.0569
    • 6000:$1.0859
    • 4000:$1.1169
    • 2000:$1.1649
    • 1000:$1.1999
    SIHF12N65E-GE3
    DISTI # 78-SIHF12N65E-GE3    		Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs TO-220 FULLPAK
    RoHS: Compliant    		243
    • 1:$2.4300
    • 10:$2.0600
    • 100:$1.7500
    • 500:$1.6500
    • 1000:$1.1900
    • 2500:$1.1100
    • 5000:$1.0900
    SIHF12N65E-GE3Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs TO-220 FULLPAK
    RoHS: Compliant    		Americas -
      SIHF12N65E-GE3
      DISTI # XSKDRABV0042485      		Vishay Intertechnologies 
      RoHS: Compliant      		35550 in Stock0 on Order
      • 35550:$1.3400
      • 500:$1.4400
      Bild Teil # Beschreibung
      SIHF12N50C-E3

      Mfr.#: SIHF12N50C-E3

      OMO.#: OMO-SIHF12N50C-E3

      		 MOSFET N-Channel 500V
      SIHF12N65E-GE3

      Mfr.#: SIHF12N65E-GE3

      OMO.#: OMO-SIHF12N65E-GE3

      		 MOSFET 650V Vds 30V Vgs TO-220 FULLPAK
      SIHF12N60E-E3

      Mfr.#: SIHF12N60E-E3

      OMO.#: OMO-SIHF12N60E-E3

      		 MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
      SIHF12N60E-GE3

      Mfr.#: SIHF12N60E-GE3

      OMO.#: OMO-SIHF12N60E-GE3

      		 MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
      SIHF12N60E-GE3

      Mfr.#: SIHF12N60E-GE3

      OMO.#: OMO-SIHF12N60E-GE3-VISHAY

      		 IGBT Transistors MOSFET 600V 380mOhms@10V 12A N-Ch E-SRS
      SIHF12N65E-GE3

      Mfr.#: SIHF12N65E-GE3

      OMO.#: OMO-SIHF12N65E-GE3-VISHAY

      		 IGBT Transistors MOSFET 650V 392Ohm@10V 12A N-Ch E-SRS
      SIHF12N50C-E3

      Mfr.#: SIHF12N50C-E3

      OMO.#: OMO-SIHF12N50C-E3-VISHAY

      		 RF Bipolar Transistors MOSFET N-Channel 500V
      SIHF12N60E

      Mfr.#: SIHF12N60E

      OMO.#: OMO-SIHF12N60E-1190

      		 Neu und Original
      SIHF12N60E-E3

      Mfr.#: SIHF12N60E-E3

      OMO.#: OMO-SIHF12N60E-E3-VISHAY

      		 MOSFET N-CH 600V 12A TO220 FULLP
      SIHF12N65E

      Mfr.#: SIHF12N65E

      OMO.#: OMO-SIHF12N65E-1190

      		 Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      5500
      Menge eingeben:
      Der aktuelle Preis von SIHF12N65E-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,59 $
      1,59 $
      10
      1,51 $
      15,06 $
      100
      1,43 $
      142,68 $
      500
      1,35 $
      673,75 $
      1000
      1,27 $
      1 268,30 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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