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SIHF22N60E-E3

SIHF22N60E-E3
Mfr. #:
SIHF22N60E-E3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET RECOMMENDED ALT 781-SIR462DP-T1-GE3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHF22N60E-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIHF22N60E-E3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220FP-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
21 A
Rds On - Drain-Source-Widerstand:
180 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
57 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
35 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Serie:
E
Marke:
Vishay / Siliconix
Abfallzeit:
35 ns
Produktart:
MOSFET
Anstiegszeit:
27 ns
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
66 ns
Typische Einschaltverzögerungszeit:
18 ns
Gewichtseinheit:
0.211644 oz
Tags
SIHF22N60E, SIHF22N60, SIHF22, SIHF2, SIHF, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-220 Full-Pak
***ure Electronics
E-Series N-Channel 600 V 0.18 O 86 nC Flange Mount Power Mosfet - TO-220FP
***nell
MOSFET, N CH, 600V, 21A, TO-220 FULLPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:227W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Teil # Mfg. Beschreibung Aktie Preis
SIHF22N60E-E3
DISTI # SIHF22N60E-E3-ND		Vishay SiliconixMOSFET N-CH 600V 21A TO220
Min Qty: 1
Container: Tube		994In Stock
  • 2500:$1.6944
  • 1000:$1.7836
  • 500:$2.1148
  • 100:$2.4843
  • 10:$3.0320
  • 1:$3.3800
SIHF22N60E-E3
DISTI # SIHF22N60E-E3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-220 Full-Pak - Rail/Tube (Alt: SIHF22N60E-E3)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 6000:$1.5900
  • 10000:$1.5900
  • 2000:$1.6900
  • 4000:$1.6900
  • 1000:$1.7900
SIHF22N60E-GE3
DISTI # 78-SIHF22N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220 FULLPAK
RoHS: Compliant		862
  • 1:$4.0600
  • 10:$3.3600
  • 100:$2.7600
  • 250:$2.6800
  • 500:$2.4000
  • 1000:$2.3200
  • 2500:$1.9200
SIHF22N60E-E3
DISTI # 781-SIHF22N60E-E3		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SIR462DP-T1-GE3
RoHS: Compliant		0
    SIHF22N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220 FULLPAK
    RoHS: Compliant    		Americas -
      SIHF22N60E-E3
      DISTI # 7689329      		Vishay IntertechnologiesSIHF22N60E-E3 N-Channel MOSFET, 21 A, 600 V E Series, 3-Pin TO-220FP Vishay, EA
      Min Qty: 1
      Container: Bulk      		16
      • 1:$3.3790
      • 10:$3.2110
      • 20:$3.0750
      SIHF22N60E-E3
      DISTI # 1696158      		Vishay IntertechnologiesIn a Tube of 50, SIHF22N60E-E3 N-Channel MOSFET, 21 A, 600 V E Series, 3-Pin TO-220FP Vishay, TU
      Min Qty: 50
      Container: Tube      		0
      • 50:$2.9740
      SIHF22N60E-E3
      DISTI # 2079769      		Vishay IntertechnologiesMOSFET, N CH, 600V, 21A, TO-220 FULLPAK
      RoHS: Compliant      		0
      • 3000:£1.5400
      • 2000:£1.6000
      • 500:£1.6900
      • 250:£1.8100
      • 100:£1.9600
      • 25:£2.1900
      • 1:£2.6400
      Bild Teil # Beschreibung
      SIHF22N60E-GE3

      Mfr.#: SIHF22N60E-GE3

      OMO.#: OMO-SIHF22N60E-GE3

      		 MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
      SIHF22N65E-GE3

      Mfr.#: SIHF22N65E-GE3

      OMO.#: OMO-SIHF22N65E-GE3

      		 MOSFET 650V Vds 30V Vgs TO-220 FULLPAK
      SIHF22N60E-E3

      Mfr.#: SIHF22N60E-E3

      OMO.#: OMO-SIHF22N60E-E3

      		 MOSFET RECOMMENDED ALT 781-SIR462DP-T1-GE3
      SIHF22N60E-E3

      Mfr.#: SIHF22N60E-E3

      OMO.#: OMO-SIHF22N60E-E3-VISHAY

      		 IGBT Transistors MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS
      SIHF22N60S-E3

      Mfr.#: SIHF22N60S-E3

      OMO.#: OMO-SIHF22N60S-E3-126

      		 IGBT Transistors MOSFET 600V N-Channel Super junction TO-220FP
      SIHF22N65E-GE3

      Mfr.#: SIHF22N65E-GE3

      OMO.#: OMO-SIHF22N65E-GE3-VISHAY

      		 RF Bipolar Transistors MOSFET 650V 180mOhm@10V 22A N-Ch E-SRS
      SIHF22N60E-GE3

      Mfr.#: SIHF22N60E-GE3

      OMO.#: OMO-SIHF22N60E-GE3-VISHAY

      		 RF Bipolar Transistors MOSFET 600V 180mOhms@10V 21A N-Ch E-SRS
      SIHF22N60E

      Mfr.#: SIHF22N60E

      OMO.#: OMO-SIHF22N60E-1190

      		 Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      SIHF22N65E

      Mfr.#: SIHF22N65E

      OMO.#: OMO-SIHF22N65E-1190

      		 Neu und Original
      SIHF22N6OE-E3

      Mfr.#: SIHF22N6OE-E3

      OMO.#: OMO-SIHF22N6OE-E3-1190

      		 Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      3000
      Menge eingeben:
      Der aktuelle Preis von SIHF22N60E-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1000
      1,78 $
      1 780,00 $
      3000
      1,69 $
      5 070,00 $
      5000
      1,63 $
      8 150,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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