SIHF22N60E

SIHF22N60E
Mfr. #:
SIHF22N60E
Hersteller:
VISHAY
Beschreibung:
Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHF22N60E Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
VISHAY
Produktkategorie
IC-Chips
Serie
E
Verpackung
Rohr
Gewichtseinheit
0.211644 oz
Montageart
Durchgangsloch
Handelsname
E-Serie
Paket-Koffer
TO-220-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
227 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
21 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Rds-On-Drain-Source-Widerstand
180 mOhms
Transistor-Polarität
N-Kanal
Qg-Gate-Ladung
57 nC
Vorwärts-Transkonduktanz-Min
6.4 S
Tags
SIHF22N60E, SIHF22N60, SIHF22, SIHF2, SIHF, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
SIHF22N60E-GE3
DISTI # V36:1790_09218836
Vishay IntertechnologiesTrans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-220FP
RoHS: Compliant
0
  • 1000000:$1.9770
  • 500000:$1.9820
  • 100000:$2.5690
  • 10000:$3.7540
  • 1000:$3.9600
SIHF22N60E-E3
DISTI # SIHF22N60E-E3-ND
Vishay SiliconixMOSFET N-CH 600V 21A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube
995In Stock
  • 5000:$1.7123
  • 3000:$1.7791
  • 1000:$1.8728
  • 100:$2.6085
  • 25:$3.0100
  • 10:$3.1840
  • 1:$3.5400
SIHF22N60E-GE3
DISTI # SIHF22N60E-GE3-ND
Vishay SiliconixMOSFET N-CH 600V 21A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 5000:$1.9488
  • 2500:$2.0249
  • 500:$2.5274
  • 100:$2.9689
  • 50:$3.4256
  • 10:$3.6240
  • 1:$4.0300
SIHF22N60E-E3
DISTI # SIHF22N60E-E3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-220 Full-Pak - Rail/Tube (Alt: SIHF22N60E-E3)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 6000:$1.5900
  • 10000:$1.5900
  • 2000:$1.6900
  • 4000:$1.6900
  • 1000:$1.7900
SIHF22N60E-GE3
DISTI # SIHF22N60E-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 21A 3-Pin TO-220FP - Tape and Reel (Alt: SIHF22N60E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 10000:$1.7900
  • 4000:$1.8900
  • 6000:$1.8900
  • 2000:$1.9900
  • 1000:$2.0900
SIHF22N60E-GE3
DISTI # SIHF22N60E-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 21A 3-Pin TO-220FP (Alt: SIHF22N60E-GE3)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 500:€1.4900
  • 1000:€1.4900
  • 50:€1.5900
  • 100:€1.5900
  • 25:€1.7900
  • 10:€2.1900
  • 1:€2.7900
SIHF22N60E-GE3
DISTI # 19X1936
Vishay IntertechnologiesMOSFET Transistor, N Channel, 21 A, 600 V, 0.15 ohm, 10 V, 2 V RoHS Compliant: Yes5240
  • 500:$2.8200
  • 100:$3.4400
  • 50:$3.7800
  • 25:$4.1200
  • 10:$4.4500
  • 1:$4.6700
SIHF22N60E-GE3
DISTI # 78-SIHF22N60E-GE3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220 FULLPAK
RoHS: Compliant
862
  • 1:$4.0600
  • 10:$3.3600
  • 100:$2.7600
  • 250:$2.6800
  • 500:$2.4000
  • 1000:$2.0200
  • 2500:$1.9200
SIHF22N60E-E3
DISTI # 781-SIHF22N60E-E3
Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SIR462DP-T1-GE3
RoHS: Compliant
0
    SIHF22N60E-E3
    DISTI # 7689329P
    Vishay IntertechnologiesMOSFET N-CHANNEL 600V 21A TO220FP, TU986
    • 20:£1.8200
    • 10:£1.9000
    SIHF22N60EVishay SiliconixPower Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant
    500
      SIHF22N60EGE3Vishay SiliconixPower Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      RoHS: Compliant
      500
        SIHF22N60E-GE3
        DISTI # 2364078
        Vishay IntertechnologiesMOSFET, N-CH, 600V, 12A, TO-220FP6468
        • 500:£2.1000
        • 250:£2.3600
        • 100:£2.5900
        • 10:£2.8500
        • 1:£3.9600
        SIHF22N60E-GE3
        DISTI # 2364078
        Vishay IntertechnologiesMOSFET, N-CH, 600V, 12A, TO-220FP
        RoHS: Compliant
        5240
        • 2500:$3.0600
        • 500:$3.8100
        • 100:$4.4800
        • 50:$5.1700
        • 10:$5.4700
        • 1:$6.0700
        SIHF22N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220 FULLPAK
        RoHS: Compliant
        Americas -
          Bild Teil # Beschreibung
          SIHF22N60E-GE3

          Mfr.#: SIHF22N60E-GE3

          OMO.#: OMO-SIHF22N60E-GE3

          MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
          SIHF22N60E-E3

          Mfr.#: SIHF22N60E-E3

          OMO.#: OMO-SIHF22N60E-E3

          MOSFET RECOMMENDED ALT 781-SIR462DP-T1-GE3
          SIHF22N60E-E3

          Mfr.#: SIHF22N60E-E3

          OMO.#: OMO-SIHF22N60E-E3-VISHAY

          IGBT Transistors MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS
          SIHF22N60S-E3

          Mfr.#: SIHF22N60S-E3

          OMO.#: OMO-SIHF22N60S-E3-126

          IGBT Transistors MOSFET 600V N-Channel Super junction TO-220FP
          SIHF28N60EF-GE3

          Mfr.#: SIHF28N60EF-GE3

          OMO.#: OMO-SIHF28N60EF-GE3-VISHAY

          RF Bipolar Transistors MOSFET 600V 123mOhms@10V 28A N-Ch MOSFET
          SIHF23N60E-GE3

          Mfr.#: SIHF23N60E-GE3

          OMO.#: OMO-SIHF23N60E-GE3-VISHAY

          RF Bipolar Transistors MOSFET 600V 158mOhm@10V 23A N-Ch E-SRS
          SIHF22N60

          Mfr.#: SIHF22N60

          OMO.#: OMO-SIHF22N60-1190

          Neu und Original
          SIHF22N60E

          Mfr.#: SIHF22N60E

          OMO.#: OMO-SIHF22N60E-1190

          Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
          SIHF22N65E

          Mfr.#: SIHF22N65E

          OMO.#: OMO-SIHF22N65E-1190

          Neu und Original
          SIHF22N6OE-E3

          Mfr.#: SIHF22N6OE-E3

          OMO.#: OMO-SIHF22N6OE-E3-1190

          Neu und Original
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          4000
          Menge eingeben:
          Der aktuelle Preis von SIHF22N60E dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
          Referenzpreis (USD)
          Menge
          Stückpreis
          ext. Preis
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          Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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