PartNumber | SIHF9630S-GE3 | SIHF9540S-GE3 | SIHF9540PBF |
Description | MOSFET -200V Vds 20V Vgs D2PAK (TO-263) | MOSFET 100V Vds 20V Vgs D2PAK (TO-263) | MOSFET -100V Vds +/-20V Vgs Rds(on) 0.20 @-10V |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-263-3 | TO-263-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | P-Channel | P-Channel | - |
Vds Drain Source Breakdown Voltage | 200 V | 100 V | - |
Id Continuous Drain Current | 6.5 A | 19 A | - |
Rds On Drain Source Resistance | 800 mOhms | 200 mOhms | - |
Vgs th Gate Source Threshold Voltage | - 4 V | - 4 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 29 nC | 61 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 175 C | - |
Pd Power Dissipation | 74 W | 150 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Series | SIHF | SIH | - |
Transistor Type | 1 P-Channel | 1 P-Channel | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 2.8 S | 6.2 S | - |
Fall Time | 24 ns | 57 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 27 ns | 73 ns | - |
Factory Pack Quantity | 1 | 1 | - |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 28 ns | 34 ns | - |
Typical Turn On Delay Time | 12 ns | 16 ns | - |
Hersteller | Teil # | Beschreibung | RFQ |
---|---|---|---|
Vishay / Siliconix |
SIHFL110TR-GE3 | MOSFET 100V Vds 20V Vgs SOT-223 | |
SIHF9630STRL-GE3 | MOSFET -200V Vds 20V Vgs D2PAK (TO-263) | ||
SIHF9630S-GE3 | MOSFET -200V Vds 20V Vgs D2PAK (TO-263) | ||
SIHFB20N50K-E3 | MOSFET RECOMMENDED ALT 781-SIHP18N50C-E3 | ||
SIHF9640S-GE3 | MOSFET -200V Vds 20V Vgs D2PAK (TO-263) | ||
SIHFIB16N50K-E3 | MOSFET 500V 6.7A 45W 350mohm @ 10V | ||
SIHF9540S-GE3 | MOSFET 100V Vds 20V Vgs D2PAK (TO-263) | ||
SIHF9540PBF | MOSFET -100V Vds +/-20V Vgs Rds(on) 0.20 @-10V | ||
SIHFB11N50A-E3 | MOSFET RECOMMENDED ALT 781-SIHP12N50C-E3 | ||
SIHFIB16N50K-E3 | RF Bipolar Transistors MOSFET 500V 6.7A 45W 350mohm @ 10V | ||
SIHF9630 | Neu und Original | ||
SIHF9640STRL-GE3 | Neu und Original | ||
SIHF9Z14S-GE3 | SIHF9Z14S-GE3 P-channel MOSFET Transistor, 4.7 A, 60 V, 3-Pin D2PAK | ||
SIHF9Z34 | Neu und Original | ||
SIHFB16N50K-E3 | Neu und Original | ||
SIHFB18N50K-E3 | Neu und Original | ||
SIHFB9N65A | Neu und Original | ||
SIHFBC30ASTL-E3A | Neu und Original | ||
SIHFBC40AS-E3 | Neu und Original | ||
SIHFBE30 | Neu und Original | ||
SIHFBE30S-GE3 | Neu und Original | ||
SIHFBF20S | Neu und Original | ||
SIHFBF20STR-E3 | Neu und Original | ||
SIHFBF20STRL-GE3 | Transistor MOSFET N-CH 900V 1.7A 3-Pin TO-263 T/R (Alt: SIHFBF20STRL-GE3) | ||
SIHFD121-E3 | Neu und Original | ||
SIHFI720G | Neu und Original | ||
SIHFI9Z24G | Neu und Original | ||
SIHFIB11N50A | Neu und Original | ||
SIHFIB11N50A,SIHFIB11N50 | Neu und Original | ||
SIHFIB11N50A-E3 | Neu und Original | ||
SIHFIB9N60A | Neu und Original | ||
SIHFIB9N60A-E3 | Neu und Original | ||
SIHFIB9N60A-E3,FIB9N60A | Neu und Original | ||
SIHFIB9N60A-E3,SIHFIB9N6 | Neu und Original | ||
SIHFIB9N65A 2SK4100 | Neu und Original | ||
SIHFIB9N65A,SIHFIB9N65A- | Neu und Original | ||
SIHFIB9N65A-E3 | Neu und Original | ||
SIHFIB9N65A-E3,SIHFIB9N6 | Neu und Original | ||
SIHFIB9N6A-E3 | Neu und Original | ||
SIHFIBC30G | Neu und Original | ||
SIHFIBC40GLC | Neu und Original | ||
SIHFIZ34G | Neu und Original | ||
SIHFL014 | Neu und Original | ||
SIHFL014-GE3 | Neu und Original | ||
SIHFL014TR-GE3 | MOSFET MOSFET N-CHANNEL 60V | ||
SIHFL110 | Neu und Original | ||
SIHFL110TR-GE3 | HANNEL 100V | ||
SIHFL210 | Neu und Original | ||
Vishay |
SIHFB11N50A-E3 | MOSFET N-CH 500V 11A TO220AB | |
SIHFB20N50K-E3 | MOSFET N-CH 500V 20A TO220AB |