PartNumber | SIHFR9120-GE3 | SIHFR9024TR-GE3 | SIHFR9014-GE3 |
Description | MOSFET -100V Vds 20V Vgs DPAK (TO-252) | MOSFET -60V Vds 20V Vgs DPAK (TO-252) | MOSFET -60V Vds 20V Vgs DPAK (TO-252) |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | P-Channel | P-Channel | P-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 60 V | 60 V |
Id Continuous Drain Current | 5.6 A | 8.8 A | 5.1 A |
Rds On Drain Source Resistance | 600 mOhms | 280 mOhms | 500 mOhms |
Vgs th Gate Source Threshold Voltage | - 4 V | - 4 V | - 4 V |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 18 nC | 19 nC | 12 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 42 W | 42 W | 25 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Series | SIH | SIH | SIH |
Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 1.5 S | 2.9 S | 1.4 S |
Fall Time | 25 ns | 29 ns | 31 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 29 ns | 68 ns | 63 ns |
Factory Pack Quantity | 1 | 1 | 1 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 21 ns | 15 ns | 9.6 ns |
Typical Turn On Delay Time | 9.6 ns | 13 ns | 11 ns |
Hersteller | Teil # | Beschreibung | RFQ |
---|---|---|---|
Vishay / Siliconix |
SIHFR9310TR-GE3 | MOSFET -400V Vds 20V Vgs DPAK (TO-252) | |
SIHFZ48S-GE3 | MOSFET 60V Vds 20V Vgs D2PAK (TO-263) | ||
SIHFR9120-GE3 | MOSFET -100V Vds 20V Vgs DPAK (TO-252) | ||
SIHFU9220-GE3 | MOSFET -200V Vds 20V Vgs IPAK (TO-251) | ||
SIHFR9310-GE3 | MOSFET -400V Vds 20V Vgs DPAK (TO-252) | ||
SIHFR9024TR-GE3 | MOSFET -60V Vds 20V Vgs DPAK (TO-252) | ||
SIHFR9014-GE3 | MOSFET -60V Vds 20V Vgs DPAK (TO-252) | ||
SIHFS11N50A-GE3 | MOSFET 600V Vds E Series D2PAK TO-263 | ||
SIHFS9N60A-GE3 | MOSFET 600V Vds TO-263 D2PAK | ||
SIHFZ48RS-GE3 | MOSFET 60V Vds 20V Vgs D2PAK (TO-263) | ||
SIHFR9120-GE3 | Trans MOSFET P-CH 100V 5.6A | ||
SIHFR9310TR-GE3 | Trans MOSFET P-CH 400V 1.8A 3-Pin(2+Tab) DPAK | ||
SIHFU9220-GE3 | Trans MOSFET P-CH 200V 3.6A 3-Pin(3+Tab) TO-251AA | ||
SIHFR9310-GE3 | Trans MOSFET P-CH 400V 1.8A 3-Pin(2+Tab) TO-252AA | ||
SIHFZ48S-GE3 | Trans MOSFET N-CH Si 60V 50A 3-Pin(2+Tab) D2PAK | ||
SIHFRC20TR-GE3 | Transistor MOSFET N-CH 600V 2A 3-Pin TO-252 T/R (Alt: SIHFRC20TR-GE3) | ||
SIHFU9024-GE3 | Trans MOSFET P-CH 60V 8.8A 3-Pin TO-251 T/R (Alt: SIHFU9024-GE3) | ||
SIHFR9010 | Neu und Original | ||
SIHFR9012 | Neu und Original | ||
SIHFR9014 | Neu und Original | ||
SIHFR9014-E3 | Neu und Original | ||
SIHFR9020 | Neu und Original | ||
SIHFR9020T | Neu und Original | ||
SIHFR9020TRGE3 | Power Field-Effect Transistor, 9.9A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | ||
SIHFR9024 | Neu und Original | ||
SIHFR9024T-E3 | Neu und Original | ||
SIHFR9120-E3 | Neu und Original | ||
SIHFR9210-E3 | Neu und Original | ||
SIHFR9214 | Neu und Original | ||
SIHFR9220 | Neu und Original | ||
SIHFR9220-GE3 | Trans MOSFET P-CH 200V 3.6A 3-Pin(2+Tab) TO-252AA | ||
SIHFR9220TL-E3 | Neu und Original | ||
SIHFR9220TR-E3 | Neu und Original | ||
SIHFRC20-GE3 | Neu und Original | ||
SIHFS11N50A | Neu und Original | ||
SIHFU024-GE3 | Neu und Original | ||
SIHFU310 | Neu und Original | ||
SIHFU9010-E3 | Neu und Original | ||
SIHFU9014 | Neu und Original | ||
SIHFU9024 | Neu und Original | ||
SIHFU9024-E3 | Neu und Original | ||
SIHFU9210 | Neu und Original | ||
SIHFZ48 | Neu und Original | ||
SIHFZ48RS | Neu und Original | ||
Vishay |
SIHFS11N50A-GE3 | Trans MOSFET N-CH 500V 11A 3-Pin(2+Tab) D2PAK | |
SIHFS9N60A-GE3 | Trans MOSFET N-CH 600V 9.2A 3-Pin(2+Tab) D2PAK |