OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

IRGB10B60KDPBF

IRGB10B60KDPBF
Mfr. #:
IRGB10B60KDPBF
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Transistors 600V UltraFast 10-30kHz
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRGB10B60KDPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRGB10B60KDPBF DatasheetIRGB10B60KDPBF Datasheet (P4-P6)IRGB10B60KDPBF Datasheet (P7-P9)IRGB10B60KDPBF Datasheet (P10-P12)IRGB10B60KDPBF Datasheet (P13-P15)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-220-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
600 V
Kollektor-Emitter-Sättigungsspannung:
1.8 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
35 A
Pd - Verlustleistung:
156 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
35 A
Höhe:
8.77 mm
Länge:
10.54 mm
Breite:
4.69 mm
Marke:
Infineon-Technologien
Gate-Emitter-Leckstrom:
100 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
1000
Unterkategorie:
IGBTs
Teil # Aliase:
SP001542270
Gewichtseinheit:
0.211644 oz
Tags
IRGB10, IRGB1, IRGB, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon
Target Applications: Air Conditioner; Dryer; Fan; Pump; Solar; UPS; Washing Machine; Welding
***ernational Rectifier
600V UltraFast 10-30 kHz Copack IGBT in a TO-220AB package
***ure Electronics
IRGB10B60 Series 600 V 22 A 156 W Insulated Gate Bipolar Transistor - TO-220AB
***ied Electronics & Automation
600V ULTRAFAST 10-30 KHZ COPACK IGBT IN A TO-220AB PACKAGE
***ical
Trans IGBT Chip N-CH 600V 22A 3-Pin(3+Tab) TO-220AB
***i-Key
IGBT W/DIODE 600V 22A TO-220AB
***ark
IGBT, 600V, 22A, TO-220; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:600V; Current, Ic Continuous a Max:22A; Voltage, Vce Sat Max:2.2V; Power Dissipation:104W; Case Style:TO-220AB; Termination Type:Through ;RoHS Compliant: Yes
***nell
IGBT, 600V, 22A, TO-220; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:600V; Current Ic Continuous a Max:22A; Voltage, Vce Sat Max:2.2V; Power Dissipation:104W; Case Style:TO-220AB; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:44A; Power, Pd:104W; Time, Fall:32ns; Time, Fall Max:32ns; Time, Rise:20ns
***ment14 APAC
IGBT, 600V, 22A, TO-220; Transistor Type:IGBT; DC Collector Current:22A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:104W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:22A; Fall Time Max:32ns; Fall Time tf:32ns; Package / Case:TO-220AB; Power Dissipation Max:156W; Power Dissipation Pd:104W; Power Dissipation Pd:104W; Pulsed Current Icm:44A; Rise Time:20ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
Teil # Mfg. Beschreibung Aktie Preis
IRGB10B60KDPBF
DISTI # IRGB10B60KDPBF-ND		Infineon Technologies AGIGBT 600V 22A 156W TO220AB
RoHS: Compliant
Min Qty: 1000
Container: Tube		Limited Supply - Call
  • 1000:$1.8318
IRGB10B60KDPBF
DISTI # IRGB10B60KDPBF		Infineon Technologies AGTrans IGBT Chip N-CH 600V 22A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRGB10B60KDPBF)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 10000:$1.4900
  • 4000:$1.5900
  • 6000:$1.5900
  • 1000:$1.6900
  • 2000:$1.6900
IRGB10B60KDPBF
DISTI # IRGB10B60KDPBF		Infineon Technologies AGTrans IGBT Chip N-CH 600V 22A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: IRGB10B60KDPBF)
Min Qty: 234
Container: Bulk		Americas - 0
  • 1170:$1.2900
  • 2340:$1.2900
  • 468:$1.3900
  • 702:$1.3900
  • 234:$1.4900
IRGB10B60KDPBF
DISTI # 63J7437		Infineon Technologies AGTrans IGBT Chip N-CH 600V 22A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 63J7437)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
    IRGB10B60KDPBF
    DISTI # SP001542270    		Infineon Technologies AGTrans IGBT Chip N-CH 600V 22A 3-Pin(3+Tab) TO-220AB (Alt: SP001542270)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1000:€1.2900
    • 100:€1.3900
    • 500:€1.3900
    • 25:€1.4900
    • 50:€1.4900
    • 10:€1.6900
    • 1:€1.8900
    IRGB10B60KDPBF
    DISTI # 63J7437    		Infineon Technologies AGSINGLE IGBT, 600V, 22A,DC Collector Current:22A,Collector Emitter Saturation Voltage Vce(on):2.2V,Power Dissipation Pd:156W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes5
    • 500:$1.7700
    • 250:$1.8200
    • 100:$2.1700
    • 50:$2.5100
    • 25:$2.6700
    • 10:$3.0500
    • 1:$3.5300
    IRGB10B60KDPBF
    DISTI # 70017214    		Infineon Technologies AG600V Ultrafast 10-30 kHz COPACK IGBT IN A TO-220AB Package
    RoHS: Compliant    		405
    • 1:$3.6500
    • 2:$3.5770
    • 5:$3.4680
    • 10:$3.3220
    • 25:$3.1030
    IRGB10B60KDPBF
    DISTI # 942-IRGB10B60KDPBF    		Infineon Technologies AGIGBT Transistors 600V UltraFast 10-30kHz
    RoHS: Compliant    		116
    • 1:$2.8500
    • 10:$2.4200
    • 100:$2.1000
    • 250:$1.9900
    • 500:$1.7900
    • 1000:$1.5100
    IRGB10B60KDPBFInfineon Technologies AGInsulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-220AB
    RoHS: Compliant    		2
    • 1000:$1.4100
    • 500:$1.4800
    • 100:$1.5400
    • 25:$1.6100
    • 1:$1.7300
    IRGB10B60KDPBFInternational RectifierInsulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-220AB
    RoHS: Compliant    		3620
    • 1000:$1.4100
    • 500:$1.4800
    • 100:$1.5400
    • 25:$1.6100
    • 1:$1.7300
    IRGB10B60KDPBF
    DISTI # 8659567    		Infineon Technologies AGIGBT, 600V, 22A, TO-220
    RoHS: Compliant    		0
    • 500:$2.7600
    • 250:$3.0600
    • 100:$3.2300
    • 10:$3.7300
    • 1:$4.3800
    Bild Teil # Beschreibung
    LM358LVIDR

    Mfr.#: LM358LVIDR

    OMO.#: OMO-LM358LVIDR

    		 Operational Amplifiers - Op Amps OP AMP
    L6385E

    Mfr.#: L6385E

    OMO.#: OMO-L6385E

    		 Gate Drivers HV H-Bridge driver
    FZT651QTC

    Mfr.#: FZT651QTC

    OMO.#: OMO-FZT651QTC

    		 Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 4K
    NJM78M15FA

    Mfr.#: NJM78M15FA

    OMO.#: OMO-NJM78M15FA

    		 Linear Voltage Regulators 15V .5A 3 Terminal
    SG3525AN

    Mfr.#: SG3525AN

    OMO.#: OMO-SG3525AN

    		 Switching Controllers Voltage Mode w/Sync
    UC3525AN

    Mfr.#: UC3525AN

    OMO.#: OMO-UC3525AN

    		 Switching Controllers Regulating PWM
    IRGB15B60KDPBF

    Mfr.#: IRGB15B60KDPBF

    OMO.#: OMO-IRGB15B60KDPBF

    		 IGBT Transistors 600V UltraFast 10-30kHz
    LM358LVIDR

    Mfr.#: LM358LVIDR

    OMO.#: OMO-LM358LVIDR-TEXAS-INSTRUMENTS

    		 IC OPAMP GP 2 CIRCUIT 8SOIC
    L6385E

    Mfr.#: L6385E

    OMO.#: OMO-L6385E-STMICROELECTRONICS

    		 Gate Drivers HV H-Bridge drive
    0031.8273

    Mfr.#: 0031.8273

    OMO.#: OMO-0031-8273-SCHURTER

    		 Fuse Holder OGN-SMD FUSEHOLDER 5X20
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1500
    Menge eingeben:
    Der aktuelle Preis von IRGB10B60KDPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Beginnen mit
    Top