| PartNumber | IRGB14C40LPBF | IRGB10B60KDPBF | IRGB15B60KDPBF |
| Description | IGBT Transistors 430V LO-VCEON DISCRETE IGBT | IGBT Transistors 600V UltraFast 10-30kHz | IGBT Transistors 600V UltraFast 10-30kHz |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 430 V | 600 V | 600 V |
| Collector Emitter Saturation Voltage | 1.4 V | 1.8 V | 2.2 V |
| Maximum Gate Emitter Voltage | 10 V | 20 V | 20 V |
| Continuous Collector Current at 25 C | 20 A | 35 A | 31 A |
| Pd Power Dissipation | 125 W | 156 W | 139 W |
| Minimum Operating Temperature | - 40 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Packaging | Tube | Tube | Tube |
| Continuous Collector Current Ic Max | 20 A | 35 A | - |
| Height | 8.77 mm | 8.77 mm | 8.77 mm |
| Length | 10.54 mm | 10.54 mm | 10.54 mm |
| Width | 4.69 mm | 4.69 mm | 4.69 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Part # Aliases | SP001547952 | SP001542270 | SP001540650 |
| Unit Weight | 0.211644 oz | 0.211644 oz | 0.211644 oz |
| Gate Emitter Leakage Current | - | 100 nA | - |