OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

FGA50T65SHD

FGA50T65SHD
Mfr. #:
FGA50T65SHD
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
IGBT Transistors FS3TIGBT TO3PN 50A 650V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FGA50T65SHD Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FGA50T65SHD Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-3PN
Montageart:
Durchgangsloch
Kollektor- Emitterspannung VCEO Max:
650 V
Kollektor-Emitter-Sättigungsspannung:
2.14 V
Maximale Gate-Emitter-Spannung:
30 V
Kontinuierlicher Kollektorstrom bei 25 C:
100 A
Pd - Verlustleistung:
319 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
FGA50T65SHD
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
100 A
Marke:
ON Semiconductor / Fairchild
Gate-Emitter-Leckstrom:
400 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
450
Unterkategorie:
IGBTs
Gewichtseinheit:
0.225789 oz
Tags
FGA5, FGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans IGBT Chip N-CH 650V 100A 3-Pin TO-3PN Tube
***emi
IGBT, 650 V, 50 A Field Stop Trench
***r Electronics
Insulated Gate Bipolar Transistor, 100A I(C), 650V V(BR)CES, N-Channel
*** Electronic Components
IGBT Transistors FS3TIGBT TO3PN 50A 650V
***ark
RAIL / 650V FS Gen3 Trench IGBT
***nell
FAST & ULTRAFAST RECOVERY RECTIFIERS;
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***ical
Trans IGBT Chip N=-CH 650V 80A 268000mW 3-Pin(3+Tab) TO-3PN Rail
***emi
IGBT, 650 V, 40 A Field Stop Trench
***r Electronics
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel
*** Electronic Components
IGBT Transistors FS3TIGBT TO3PN 40A 650V
***el Electronic
IC REG LINEAR 2.5V 300MA SOT23-5
***nell
FAST & ULTRAFAST RECOVERY RECTIFIERS;
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***ical
Trans IGBT Chip N-CH 650V 100A 340000mW 3-Pin(3+Tab) TO-247 Rail
***r Electronics
Insulated Gate Bipolar Transistor, 100A I(C), 650V V(BR)CES, N-Channel, TO-247AB
***emi
650V, 50A, Field Stop Trench IGBT
*** Electronic Components
IGBT Transistors 650 V 100 A 240 W
***ark
Fs1Tigbt To247 50A 650V Rohs Compliant: Yes
***i-Key
IGBT TRENCH/FS 650V 100A TO247-3
***DA Technology Co., Ltd.
Product Description Demo for Development.
***rchild Semiconductor
Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power generator where low conduction and switching losses are essential.
***ical
Trans IGBT Chip N=-CH 650V 100A 268000mW 3-Pin(3+Tab) TO-3PN Rail
***emi
IGBT, 650 V, 50 A Field Stop Trench
***ark
FS3 650V SHD prolferation - 3LD, TO3PN, PLASTIC, EIAJ SC-65, ISOLATED
***r Electronics
Insulated Gate Bipolar Transistor, 100A I(C), 650V V(BR)CES, N-Channel
*** Electronic Components
IGBT Transistors FS3TIGBT TO3PN 50A 650V
***i-Key
IGBT TRENCH/FS 650V 100A TO3PN
***nell
FAST & ULTRAFAST RECOVERY RECTIFIERS;
***rchild Semiconductor
This ADF IGBT series adopted field stop trench 3rd generation IGBT which offer extreme low VCE(sat) and much faster switching characteristics for outstanding efficiency. And this kind of technology is fully optimized to variety PFC (Power Factor Correction) topology; Single Boost, Multi Channel Interleaved etc with over 20KHz switching performance. TO3P package provide super low thermal resistance for much wider SOA for system stability.
***ical
Trans IGBT Chip N-CH 650V 80A 283000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
***nell
IGBT, SINGLE, 650V, 80A, TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 283W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins:
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 9.7pF 25volts C0G +/-0.5pF
***nell
IGBT, 650V, 40A, TO247-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 255W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins;
***ineon SCT
Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications, PG-TO247-3, RoHS
***trelec
Configuration = Single / Continuous Collector Current (Ic) A = 40 / Collector-Emitter Voltage (Vceo) V = 650 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.6 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 250 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
***ure Electronics
IKP40N65H5: 650 V 74 A High Speed 5 IGBT TRENCHSTOPTM 5 Technology-PG-TO220-3
***ical
Trans IGBT Chip N-CH 650V 74A 250000mW 3-Pin(3+Tab) TO-220 Tube
***nsix Microsemi
Insulated Gate Bipolar Transistor, 74A I(C), 650V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, 650V, 40A, TO220-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 255W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pins: 3Pins;
***ineon SCT
High Speed 650 V, 40 A hard-switching TRENCHSTOPTM IGBT5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT, PG-TO220-3, RoHS
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
FGAFx0N60 Field Stop IGBTs
ON Semiconductor FGAFx0N60 650V Field Stop IGBTs use a novel field stop IGBT technology. These IGBTs feature high current capability, low saturation voltage, high input impedance, and fast switching. The FGAFx0N60 IGBTs offer the optimum performance for solar inverters, UPS, welder, and PFC applications that require low conduction and switching losses.
Teil # Mfg. Beschreibung Aktie Preis
FGA50T65SHD
DISTI # V99:2348_06359245		ON Semiconductor650V FS GEN3 TRENCH IGBT450
  • 250:$3.1370
  • 100:$3.3120
  • 10:$3.7570
  • 1:$4.3230
FGA50T65SHD
DISTI # FGA50T65SHD-ND		ON SemiconductorIGBT 650V 100A 319W TO-3PN
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1350:$2.7563
  • 900:$3.2681
  • 450:$3.6422
  • 10:$4.6860
  • 1:$5.2200
FGA50T65SHD
DISTI # 31074097		ON Semiconductor650V FS GEN3 TRENCH IGBT900
  • 450:$2.5030
FGA50T65SHD
DISTI # 30172842		ON Semiconductor650V FS GEN3 TRENCH IGBT450
  • 250:$3.1370
  • 100:$3.3120
  • 10:$3.7570
  • 3:$4.3230
FGA50T65SHD
DISTI # FGA50T65SHD		ON SemiconductorTrans IGBT Chip N-CH 650V 100A 3-Pin TO-3PN Tube - Rail/Tube (Alt: FGA50T65SHD)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$2.3900
  • 900:$2.3900
  • 1800:$2.3900
  • 2700:$2.2900
  • 4500:$2.2900
FGA50T65SHD
DISTI # 512-FGA50T65SHD		ON SemiconductorIGBT Transistors FS3TIGBT TO3PN 50A 650V
RoHS: Compliant		81
  • 1:$4.9700
  • 10:$4.2200
  • 100:$3.6600
  • 250:$3.4700
FGA50T65SHD
DISTI # C1S541901510138		ON SemiconductorTrans IGBT Chip N-CH 650V 100A 319000mW 3-Pin(3+Tab) TO-3PN Tube
RoHS: Compliant		450
  • 250:$3.1370
  • 100:$3.3120
  • 1:$4.3230
Bild Teil # Beschreibung
MCP3008-I/P

Mfr.#: MCP3008-I/P

OMO.#: OMO-MCP3008-I-P

 Analog to Digital Converters - ADC 10-bit SPI 8 Chl IND TEMP, PDIP16
SP723ABG

Mfr.#: SP723ABG

OMO.#: OMO-SP723ABG

 TVS Diodes / ESD Suppressors 6 CH DIODE ARRAY
MCP23S17-E/SP

Mfr.#: MCP23S17-E/SP

OMO.#: OMO-MCP23S17-E-SP

 Interface - I/O Expanders 16bit Input/Output Exp SPI interface
FGH75T65SQDT-F155

Mfr.#: FGH75T65SQDT-F155

OMO.#: OMO-FGH75T65SQDT-F155

 IGBT Transistors 650V 40A FS4 TRENCH IGBT
FGH60N60SMD

Mfr.#: FGH60N60SMD

OMO.#: OMO-FGH60N60SMD

 IGBT Transistors 600V/60A Field Stop IGBT ver. 2
STP110N8F6

Mfr.#: STP110N8F6

OMO.#: OMO-STP110N8F6

 MOSFET N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package
FDA59N30

Mfr.#: FDA59N30

OMO.#: OMO-FDA59N30

 MOSFET 500V NCH MOSFET
SL32 10015

Mfr.#: SL32 10015

OMO.#: OMO-SL32-10015-AMETHERM

 Inrush Current Limiters 32mm 10ohms 15A INRSH CURR LIMITER
SL22 2R515

Mfr.#: SL22 2R515

OMO.#: OMO-SL22-2R515-AMETHERM

 Inrush Current Limiters 22mm 2.5ohms 15A INRSH CURR LIMITER
0313.200MXP

Mfr.#: 0313.200MXP

OMO.#: OMO-0313-200MXP-LITTELFUSE

 Cartridge Fuses 250V .2A Slo-Blo 3AG
Verfügbarkeit
Aktie:
568
Auf Bestellung:
2551
Menge eingeben:
Der aktuelle Preis von FGA50T65SHD dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
4,96 $
4,96 $
10
4,21 $
42,10 $
100
3,65 $
365,00 $
250
3,47 $
867,50 $
500
3,11 $
1 555,00 $
1000
2,62 $
2 620,00 $
2500
2,49 $
6 225,00 $
5000
2,40 $
12 000,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
Beginnen mit
Neueste Produkte
  • FPF1203LUCX IntelliMAX™ Load Switches
    FPF1203LUCX IntelliMAX™ Load Switches
    ON Semiconductor FPF1203 / 03L / 04 / 45 are ultra-small integrated IntelliMAX load switches.
  • FDMQ86530L Quad-MOSFET
    FDMQ86530L Quad-MOSFET
    ON Semiconductor’s FDMQ86530L solution improves the conduction loss and efficiency of the conventional diode bridge, providing a ten-fold improvement in power dissipation.
  • MEMS Motion Tracking Modules
    MEMS Motion Tracking Modules
    ON Semiconductor's FMT1000 series are industrial grade module family includes accelerometers, gyroscopes, magnetometers, 10 ppm crystal, and a dedicated MCU.
  • Compare FGA50T65SHD
    Compare FGA50T65SHD
    FGA5000 vs FGA5065ADF vs FGA50N100
  • FL7733AMX LED Driver
    FL7733AMX LED Driver
    ON Semiconductor's FL7733A single-stage primary-side-regulated (PSR) flyback LED driver delivers constant brightness and instant flicker-free turn-on of LED lighting.
  • FL7734 PWM Controller
    FL7734 PWM Controller
    ON Semiconductor's FL7734 highly-integrated PWM controller with advanced primary-side-regulation technique minimizes components for low power LED lighting solutions.
More Newest Products
Top