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IRG4BC30FD1PBF

IRG4BC30FD1PBF
Mfr. #:
IRG4BC30FD1PBF
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Transistors 600V Fast 1-5kHz >20kHz resonant mode
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRG4BC30FD1PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRG4BC30FD1PBF DatasheetIRG4BC30FD1PBF Datasheet (P4-P6)IRG4BC30FD1PBF Datasheet (P7-P9)IRG4BC30FD1PBF Datasheet (P10)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-220-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
600 V
Kollektor-Emitter-Sättigungsspannung:
1.8 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
31 A
Pd - Verlustleistung:
100 W
Minimale Betriebstemperatur:
- 55 C
Verpackung:
Rohr
Höhe:
8.77 mm
Länge:
10.54 mm
Breite:
4.69 mm
Marke:
Infineon-Technologien
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
1000
Unterkategorie:
IGBTs
Teil # Aliase:
SP001545790
Gewichtseinheit:
0.211644 oz
Tags
IRG4BC30FD, IRG4BC30F, IRG4BC3, IRG4BC, IRG4B, IRG4, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
600V Fast 1-5 kHz Hard Switching Copack IGBT in a TO-220AB package >20kHz resonant mode
***ical
Trans IGBT Chip N-CH 600V 31A 3-Pin(3+Tab) TO-220AB Tube
***ment14 APAC
IGBT, 600V, 31A, TO-220; Transistor Type:IGBT; DC Collector Current:31A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:31A; Fall Time Max:210ns; Package / Case:TO-220AB; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:120A; Rise Time:24ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
Teil # Mfg. Beschreibung Aktie Preis
IRG4BC30FD1PBF
DISTI # 31587113		Infineon Technologies AGTrans IGBT Chip N-CH 600V 31A 100000mW 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		750
  • 5000:$1.7328
  • 2500:$1.7721
  • 1000:$1.8612
  • 750:$2.2077
IRG4BC30FD1PBF
DISTI # IRG4BC30FD1PBF-ND		Infineon Technologies AGIGBT 600V 31A 100W TO220AB
RoHS: Compliant
Min Qty: 1000
Container: Tube		Limited Supply - Call
    IRG4BC30FD1PBF
    DISTI # IRG4BC30FD1PBF    		Infineon Technologies AGTrans IGBT Chip N-CH 600V 31A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: IRG4BC30FD1PBF)
    Min Qty: 187
    Container: Bulk    		Americas - 0
    • 935:$1.6900
    • 1870:$1.6900
    • 374:$1.7900
    • 561:$1.7900
    • 187:$1.8900
    IRG4BC30FD1PBF
    DISTI # 70018427    		Infineon Technologies AG600V FAST 1-5 kHz HARD SWITCHING COPACK IGBT IN A TO-220AB
    RoHS: Compliant    		0
    • 250:$5.5200
    IRG4BC30FD1PBF
    DISTI # 942-IRG4BC30FD1PBF    		Infineon Technologies AGIGBT Transistors 600V Fast 1-5kHz >20kHz resonant mode
    RoHS: Compliant    		312
    • 1:$4.1300
    • 10:$3.5100
    • 100:$3.0400
    • 250:$2.8900
    • 500:$2.5900
    • 1000:$2.1900
    • 2000:$2.0800
    IRG4BC30FD1PBFInfineon Technologies AGInsulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB
    RoHS: Compliant    		210
    • 1000:$1.7600
    • 500:$1.8600
    • 100:$1.9300
    • 25:$2.0200
    • 1:$2.1700
    IRG4BC30FD1PBFInternational RectifierInsulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB
    RoHS: Compliant    		4300
    • 1000:$1.7600
    • 500:$1.8600
    • 100:$1.9300
    • 25:$2.0200
    • 1:$2.1700
    IRG4BC30FD1PBF
    DISTI # 8640899P    		Infineon Technologies AGIGBT 600V 31A HYPERFAST DIODE TO-220AB, TU178
    • 1000:£1.6050
    • 500:£1.8300
    • 250:£2.0500
    • 50:£2.4700
    IRG4BC30FD1PBF
    DISTI # 8659443    		Infineon Technologies AGIGBT, 600V, 31A, TO-220
    RoHS: Compliant    		0
    • 5000:$3.0800
    • 2000:$3.2000
    • 1000:$3.3700
    • 500:$3.9800
    • 250:$4.4500
    • 100:$4.6800
    • 10:$5.4000
    • 1:$6.3500
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    Verfügbarkeit
    Aktie:
    312
    Auf Bestellung:
    2295
    Menge eingeben:
    Der aktuelle Preis von IRG4BC30FD1PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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