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SIHP22N60EL-GE3

SIHP22N60EL-GE3
Mfr. #:
SIHP22N60EL-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 600V Vds 30V Vgs TO-220AB
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHP22N60EL-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHP22N60EL-GE3 DatasheetSIHP22N60EL-GE3 Datasheet (P4-P6)SIHP22N60EL-GE3 Datasheet (P7)
ECAD Model:
Mehr Informationen:
SIHP22N60EL-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220AB-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
21 A
Rds On - Drain-Source-Widerstand:
180 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
57 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
227 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Produkt:
Triacs
Serie:
EL
Marke:
Vishay / Siliconix
Abfallzeit:
35 ns
Produktart:
MOSFET
Anstiegszeit:
27 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
66 ns
Typische Einschaltverzögerungszeit:
18 ns
Gewichtseinheit:
0.063493 oz
Tags
SIHP22N60E, SIHP22N60, SIHP22, SIHP2, SIHP, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 600V 21A 3-Pin TO-220AB
***i-Key
MOSFET N-CH 600V 21A TO220AB
***ark
N-Channel 600V
EL Series High Voltage MOSFETs
Vishay Semiconductors EL Series High Voltage MOSFETs are N-channel MOSFETs that reduces switching and conduction losses. These high voltage MOSFETs feature low Figure-Of-Merit (FOM), low input capacitance, and low gate charge. The EL high voltage MOSFETs operate in 650V drain-to-source voltage (VDS) and employs single configuration. These high voltage MOSFETs come with Unclamped Inductive Switching (UIS) avalanche energy rating. Typical applications include server and telecom power supplies, lighting, welding, induction heating, motor drives, and battery chargers.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Teil # Mfg. Beschreibung Aktie Preis
SIHP22N60EL-GE3
DISTI # SIHP22N60EL-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 21A TO220AB
RoHS: Not compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$2.1903
SIHP22N60EL-GE3
DISTI # SIHP22N60EL-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 21A 3-Pin TO-220AB - Tape and Reel (Alt: SIHP22N60EL-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 6000:$1.8900
  • 10000:$1.8900
  • 4000:$1.9900
  • 1000:$2.0900
  • 2000:$2.0900
SIHP22N60EL-GE3
DISTI # 78-SIHP22N60EL-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220AB
RoHS: Compliant		0
  • 1000:$2.0900
  • 2000:$1.9900
Bild Teil # Beschreibung
SIHP22N60EF-GE3

Mfr.#: SIHP22N60EF-GE3

OMO.#: OMO-SIHP22N60EF-GE3

 MOSFET Nch 600V Vds 30V Vgs TO-220AB; w/diode
SIHP22N60AEL-GE3

Mfr.#: SIHP22N60AEL-GE3

OMO.#: OMO-SIHP22N60AEL-GE3

 MOSFET 600V Vds 30V Vgs TO-220AB
SIHP22N65E-GE3

Mfr.#: SIHP22N65E-GE3

OMO.#: OMO-SIHP22N65E-GE3

 MOSFET 650V Vds 30V Vgs TO-220AB
SIHP22N60E

Mfr.#: SIHP22N60E

OMO.#: OMO-SIHP22N60E-1190

 Neu und Original
SIHP22N60E-E3,SIHP22N60S

Mfr.#: SIHP22N60E-E3,SIHP22N60S

OMO.#: OMO-SIHP22N60E-E3-SIHP22N60S-1190

 Neu und Original
SIHP22N60E-GE3

Mfr.#: SIHP22N60E-GE3

OMO.#: OMO-SIHP22N60E-GE3-VISHAY

 MOSFET N-CH 600V 21A TO220AB
SIHP22N60EE3

Mfr.#: SIHP22N60EE3

OMO.#: OMO-SIHP22N60EE3-1190

 Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
SIHP22N60S

Mfr.#: SIHP22N60S

OMO.#: OMO-SIHP22N60S-1190

 Neu und Original
SIHP22N60S-E3/45

Mfr.#: SIHP22N60S-E3/45

OMO.#: OMO-SIHP22N60S-E3-45-1190

 Neu und Original
SIHP22N60EF-GE3

Mfr.#: SIHP22N60EF-GE3

OMO.#: OMO-SIHP22N60EF-GE3-1190

 MOSFET N-CHAN 600V TO-220AB
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3500
Menge eingeben:
Der aktuelle Preis von SIHP22N60EL-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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