IPDD60R190G7XTMA1

Mfr. #:: IPDD60R190G7XTMA1
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET NCH 650V 36A PG-HDSOP-10
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IPDD60R190G7XTMA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: IPDD60R190G7XTMA1 Mehr Informationen

Produkteigenschaft
Attributwert

Tags: IPDD60R1, IPDD6, IPDD, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPDD60R190G7XTMA1 Beschreibung

***ure Electronics: N-Channel 600 V 190 mOhm 18 nC CoolMOS G7 Power Transistor - HDSOP-10

***ical: Trans MOSFET N-CH 600V 13A 10-Pin HDSOP EP T/R

***i-Key: MOSFET NCH 650V 36A PG-HDSOP-10

***ronik: N-CH 600V 13A 164mOhm HDSOP-10

***et Europe: HIGH POWER_NEW

***ark: Mosfet, N-Ch, 600V, 13A, Hdsop; Transistor Polarity:n Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.164Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 600V, 13A, HDSOP; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.164ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:76W; Transistor Case Style:HDSOP; No. of Pins:10Pins; Operating Temperature Max:150°C; Product Range:CoolMOS C7 Gold Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CA-N, 600V, 13A, HDSOP; Polarità Transistor:Canale N; Corrente Continua di Drain Id:13A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.164ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:76W; Modello Case Transistor:HDSOP; No. di Pin:10Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS C7 Gold Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

IPDD60R190G7XTMA1 Mehr Informationen

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

CoolMOS™ C7 Gold (G7) Power MOSFETs: Infineon Technologies CoolMOS™ C7 Gold (G7) Power MOSFETs are housed in the new SMD TO-Leadless (TOLL) package using the Kelvin source concept. The G7 MOSFETs combine improved 600V and 650V CoolMOS™ G7 technology, 4-pin Kelvin source capability, and the improved thermal properties of the TO-Leadless package. This enables an SMD solution for high current hard switching topologies like power factor correction (PFC) up to 3kW. For the 600V CoolMOS™ G7, the MOSFETs can be used for resonant circuits like high end LLC.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IPDD60R190G7XTMA1 DISTI # V72:2272_19084638	Infineon Technologies AG	Trans MOSFET N-CH 600V 13A 10-Pin HDSOP EP T/R	0
IPDD60R190G7XTMA1 DISTI # IPDD60R190G7XTMA1CT-ND	Infineon Technologies AG	MOSFET NCH 650V 36A PG-HDSOP-10 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	484In Stock	500:$1.8420 100:$2.3683 10:$2.9470 1:$3.2600
IPDD60R190G7XTMA1 DISTI # IPDD60R190G7XTMA1DKR-ND	Infineon Technologies AG	MOSFET NCH 650V 36A PG-HDSOP-10 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	484In Stock	500:$1.8420 100:$2.3683 10:$2.9470 1:$3.2600
IPDD60R190G7XTMA1 DISTI # IPDD60R190G7XTMA1TR-ND	Infineon Technologies AG	MOSFET NCH 650V 36A PG-HDSOP-10 RoHS: Compliant Min Qty: 1700 Container: Tape & Reel (TR)	Temporarily Out of Stock	5100:$1.3285 3400:$1.3796 1700:$1.4817
IPDD60R190G7XTMA1 DISTI # SP001632844	Infineon Technologies AG	HIGH POWER_NEW (Alt: SP001632844) RoHS: Compliant Min Qty: 1700	Europe - 1700	1700:€1.8900 3400:€1.4900 6800:€1.1900 10200:€1.1900 17000:€1.0900
IPDD60R190G7XTMA1 DISTI # IPDD60R190G7XTMA1	Infineon Technologies AG	HIGH POWER_NEW - Tape and Reel (Alt: IPDD60R190G7XTMA1) RoHS: Compliant Min Qty: 1700 Container: Reel	Americas - 0	1700:$1.2900 3400:$1.1900 6800:$1.1900 10200:$1.1900 17000:$1.0900
IPDD60R190G7XTMA1 DISTI # 59AC7044	Infineon Technologies AG	MOSFET, N-CH, 600V, 13A, HDSOP,Transistor Polarity:N Channel,Continuous Drain Current Id:13A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.164ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes	980	1000:$1.3400 500:$1.6200 250:$1.7400 100:$1.8500 50:$2.0100 25:$2.1600 10:$2.3200 1:$2.7300
IPDD60R190G7XTMA1 DISTI # 726-IPDD60R190G7XTM1	Infineon Technologies AG	MOSFET HIGH POWER_NEW RoHS: Compliant	268	1:$2.7300 10:$2.3200 100:$1.8500 500:$1.6200 1000:$1.3400 1700:$1.2500 3400:$1.2000
IPDD60R190G7XTMA1	Infineon Technologies AG	600V, 36A, DDPAK Mosfet RoHS: Compliant	200Cut Tape/Mini-Reel	1:$1.7600 50:$1.4500 100:$1.4000 250:$1.3300 500:$1.2900
IPDD60R190G7XTMA1 DISTI # 2888466	Infineon Technologies AG	MOSFET, N-CH, 600V, 13A, HDSOP RoHS: Compliant	980	500:£1.4000 250:£1.6000 100:£1.8000 10:£2.2400 1:£2.7900
IPDD60R190G7XTMA1 DISTI # 2888466	Infineon Technologies AG	MOSFET, N-CH, 600V, 13A, HDSOP RoHS: Compliant	980	1000:$1.9800 500:$2.0800 250:$2.2000 100:$2.3200 10:$2.6300 1:$2.8100
IPDD60R190G7XTMA1 DISTI # XSFP00000168632	Infineon Technologies AG	RoHS: Compliant	108 in Stock0 on Order	108:$1.9600 57:$2.0700
IPDD60R190G7XTMA1 DISTI # XSKDRABV0049482	Infineon Technologies AG	RoHS: Compliant	5100 in Stock0 on Order	5100:$1.9440 1700:$2.0760

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	Mfr.#: IPDD60R190G7XTMA1 OMO.#: OMO-IPDD60R190G7XTMA1	MOSFET HIGH POWER_NEW
	Mfr.#: IPDD60R150G7XTMA1 OMO.#: OMO-IPDD60R150G7XTMA1	MOSFET HIGH POWER_NEW
	Mfr.#: IPDD60R102G7XTMA1 OMO.#: OMO-IPDD60R102G7XTMA1	MOSFET HIGH POWER_NEW
	Mfr.#: IPDD60R102G7XTMA1 OMO.#: OMO-IPDD60R102G7XTMA1-INFINEON-TECHNOLOGIES	MOSFET NCH 650V 66A PG-HDSOP-10
	Mfr.#: IPDD60R150G7XTMA1 OMO.#: OMO-IPDD60R150G7XTMA1-INFINEON-TECHNOLOGIES	MOSFET NCH 650V 45A PG-HDSOP-10
	Mfr.#: IPDD60R102G7XTMA1-CUT TAPE OMO.#: OMO-IPDD60R102G7XTMA1-CUT-TAPE-1190	Neu und Original
	Mfr.#: IPDD60R125G7XTMA1-CUT TAPE OMO.#: OMO-IPDD60R125G7XTMA1-CUT-TAPE-1190	Neu und Original
	Mfr.#: IPDD60R150G7XTMA1-CUT TAPE OMO.#: OMO-IPDD60R150G7XTMA1-CUT-TAPE-1190	Neu und Original
	Mfr.#: IPDD60R190G7XTMA1-CUT TAPE OMO.#: OMO-IPDD60R190G7XTMA1-CUT-TAPE-1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 3000
Menge eingeben:

Der aktuelle Preis von IPDD60R190G7XTMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,64 $~~; ~~1,64 $~~

10: ~~1,55 $~~; ~~15,53 $~~

100: ~~1,47 $~~; ~~147,15 $~~

500: ~~1,39 $~~; ~~694,90 $~~

1000: ~~1,31 $~~; ~~1 308,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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IPDD60R190G7XTMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes