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Teil # | Mfg. | Beschreibung | Aktie | Preis |
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BFR193E6327HTSA1 DISTI # V72:2272_06391196 | Infineon Technologies AG | Trans RF BJT NPN 12V 0.08A Automotive 3-Pin SOT-23 T/R RoHS: Compliant | 11945 |
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BFR193E6327HTSA1 DISTI # BFR193E6327HTSA1CT-ND | Infineon Technologies AG | RF TRANS NPN 12V 8GHZ SOT23-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 31418In Stock |
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BFR193E6327HTSA1 DISTI # BFR193E6327HTSA1DKR-ND | Infineon Technologies AG | RF TRANS NPN 12V 8GHZ SOT23-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 31418In Stock |
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BFR193E6327HTSA1 DISTI # BFR193E6327HTSA1TR-ND | Infineon Technologies AG | RF TRANS NPN 12V 8GHZ SOT23-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | 27000In Stock |
|
BFR193E6327HTSA1 DISTI # 30673452 | Infineon Technologies AG | Trans RF BJT NPN 12V 0.08A Automotive 3-Pin SOT-23 T/R RoHS: Compliant | 11945 |
|
BFR193E6327HTSA1 DISTI # BFR193E6327HTSA1 | Infineon Technologies AG | Trans GP BJT NPN 12V 0.08A 3-Pin SOT-23 T/R - Tape and Reel (Alt: BFR193E6327HTSA1) RoHS: Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
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BFR193E6327HTSA1 DISTI # 79Y4025 | Infineon Technologies AG | TRANSISTOR, RF, NPN, 12V, 8GHZ, SOT-23-3,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:12V,Transition Frequency ft:8GHz,Power Dissipation Pd:580mW,DC Collector Current:80mA,DC Current Gain hFE:70hFE,RF Transistor RoHS Compliant: Yes | 10769 |
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BFR193E6327HTSA1. DISTI # 25AC6335 | Infineon Technologies AG | Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:12V,Transition Frequency ft:8GHz,Power Dissipation Pd:580mW,DC Collector Current:80mA,DC Current Gain hFE:70hFE,RF Transistor Case:SOT-23,No. of Pins:3Pins RoHS Compliant: Yes | 0 | |
BFR 193 E6327 DISTI # 726-BFR193E6327 | Infineon Technologies AG | RF Bipolar Transistors NPN RF Transistor 12V 80mA 580mW RoHS: Compliant | 31583 |
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BFR193E6327HTSA1 DISTI # 726-BFR193E6327HTSA1 | Infineon Technologies AG | RF Bipolar Transistors NPN RF Transistor 12V 80mA 580mW RoHS: Compliant | 15010 |
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BFR193E6327HTSA1 | Infineon Technologies AG | BFR193 Series 12 V 80 mA Low Noise Silicon Bipolar RF Transistor - SOT-23-3 RoHS: Compliant | 510000Reel |
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BFR193E6327HTSA1 DISTI # 8235538 | Infineon Technologies AG | RF TRANSISTOR NPN 12V LOW NOISE SOT23, PK | 775 |
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BFR193E6327HTSA1 DISTI # 8235538P | Infineon Technologies AG | RF TRANSISTOR NPN 12V LOW NOISE SOT23, RL | 14200 |
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BFR193E6327HTSA1 DISTI # BFR193 | Infineon Technologies AG | NPN-RF 12V 80mA 580mW 8GHz SOT23 RoHS: Compliant | 1100 |
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BFR193E6327HTSA1 DISTI # 2432737 | Infineon Technologies AG | TRANSISTOR, RF, NPN, 12V, 8GHZ, SOT-23-3 RoHS: Compliant | 10925 |
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BFR193E6327HTSA1 DISTI # 2432737 | Infineon Technologies AG | TRANSISTOR, RF, NPN, 12V, 8GHZ, SOT-23-3 RoHS: Compliant | 10769 |
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BFR193E6327HTSA1 DISTI # C1S322000614680 | Infineon Technologies AG | Other transistors RoHS: Compliant | 11945 |
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Bild | Teil # | Beschreibung |
---|---|---|
Mfr.#: LMC6482IM/NOPB OMO.#: OMO-LMC6482IM-NOPB |
Operational Amplifiers - Op Amps CMOS Dual R/R I/O Op Amp | |
Mfr.#: CG2H40010F OMO.#: OMO-CG2H40010F |
RF JFET Transistors GaN HEMT DC-8.0GHz, 10 Watt | |
Mfr.#: MBR2H100SFT3G OMO.#: OMO-MBR2H100SFT3G |
Schottky Diodes & Rectifiers 2A 100V | |
Mfr.#: CC0603KRX7R9BB102 OMO.#: OMO-CC0603KRX7R9BB102 |
Multilayer Ceramic Capacitors MLCC - SMD/SMT 1.0nF 50V X7R 10% | |
Mfr.#: CC0603KRX7R9BB103 OMO.#: OMO-CC0603KRX7R9BB103 |
Multilayer Ceramic Capacitors MLCC - SMD/SMT 10nF 50V X7R 10% | |
Mfr.#: 031-70526-11 OMO.#: OMO-031-70526-11 |
RF Connectors / Coaxial Connectors 75OHM EDGE MOUNT BNC PCB .062/ .625"HEX | |
Mfr.#: RAPC722X OMO.#: OMO-RAPC722X |
DC Power Connectors RT ANGL PWK JK PIN D | |
Mfr.#: RAPC722X |
DC Power Connectors RT ANGL PWK JK PIN D | |
Mfr.#: LMC6482IM/NOPB |
Operational Amplifiers - Op Amps CMOS Dual R/R I/O Op Amp | |
Mfr.#: CG2H40010F OMO.#: OMO-CG2H40010F-WOLFSPEED |
RF MOSFET HEMT 28V 440166 |