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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| IPD082N10N3GATMA1 DISTI # IPD082N10N3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 100V 80A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 5773In Stock |
|
| IPD082N10N3GATMA1 DISTI # IPD082N10N3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 100V 80A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 5773In Stock |
|
| IPD082N10N3GATMA1 DISTI # IPD082N10N3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 100V 80A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | 5000In Stock |
|
| IPD082N10N3GBTMA1 DISTI # IPD082N10N3GBTMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 100V 80A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call | |
| IPD082N10N3 G DISTI # IPD082N10N3 G | Infineon Technologies AG | Trans MOSFET N-CH 100V 80A 3-Pin TO-252 T/R (Alt: IPD082N10N3 G) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Asia - 0 |
|
| IPD082N10N3GATMA1 DISTI # IPD082N10N3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 100V 80A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD082N10N3GATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
| IPD082N10N3GATMA1 DISTI # SP001127824 | Infineon Technologies AG | Trans MOSFET N-CH 100V 80A 3-Pin TO-252 T/R (Alt: SP001127824) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Europe - 0 |
|
| IPD082N10N3GATMA1 DISTI # 12AC9706 | Infineon Technologies AG | MOSFET, N-CH, 100V, 80A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.007ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,Power RoHS Compliant: Yes | 2500 |
|
| IPD082N10N3 G DISTI # 726-IPD082N10N3G | Infineon Technologies AG | MOSFET N-Ch 100V 80A DPAK-2 OptiMOS 3 RoHS: Compliant | 0 | |
| IPD082N10N3GATMA1 DISTI # 726-IPD082N10N3GA | Infineon Technologies AG | MOSFET MV POWER MOS RoHS: Compliant | 7100 |
|
| IPD082N10N3GBTMA1 DISTI # 726-IPD082N10N3GBTMA | Infineon Technologies AG | MOSFET N-Ch 100V 80A DPAK-2 OptiMOS 3 RoHS: Compliant | 0 | |
| IPD082N10N3GATMA1 DISTI # 2709872 | Infineon Technologies AG | MOSFET, N-CH, 100V, 80A, TO-252 RoHS: Compliant | 3445 |
|
| IPD082N10N3GATMA1 DISTI # 2709872 | Infineon Technologies AG | MOSFET, N-CH, 100V, 80A, TO-252 RoHS: Compliant | 2500 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: IPD082N10N3GATMA1 OMO.#: OMO-IPD082N10N3GATMA1 |
MOSFET MV POWER MOS |
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Mfr.#: IPD082N10N3GBTMA1 OMO.#: OMO-IPD082N10N3GBTMA1 |
MOSFET N-Ch 100V 80A DPAK-2 OptiMOS 3 |
|
Mfr.#: IPD082N10N3GATMA1 |
MOSFET N-CH 100V 80A TO252-3 |
|
Mfr.#: IPD082N10N3 OMO.#: OMO-IPD082N10N3-1190 |
Neu und Original |
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Mfr.#: IPD082N10N3G OMO.#: OMO-IPD082N10N3G-1190 |
100V,80A,N Channel Power MOSFET |
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Mfr.#: IPD082N10N3GBTMA1 |
MOSFET N-CH 100V 80A TO252-3 |
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Mfr.#: IPD082N10N3 G OMO.#: OMO-IPD082N10N3-G-126 |
IGBT Transistors MOSFET N-Ch 100V 80A DPAK-2 OptiMOS 3 |