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FGB40N60SM

FGB40N60SM
Mfr. #:
FGB40N60SM
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
IGBT Transistors 600V 40A FIELD STOP PLANAR IGBT GEN2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FGB40N60SM Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FGB40N60SM Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-263AB-3
Montageart:
SMD/SMT
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
600 V
Kollektor-Emitter-Sättigungsspannung:
2.3 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
80 A
Pd - Verlustleistung:
349 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
FGB40N60SM
Verpackung:
Spule
Marke:
ON Semiconductor / Fairchild
Gate-Emitter-Leckstrom:
+/- 400 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
800
Unterkategorie:
IGBTs
Gewichtseinheit:
0.046296 oz
Tags
FGB40, FGB4, FGB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 80A 3-Pin(2+Tab) D2PAK T/R
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-263AB
***ure Electronics
FGB40N60SM Series 600 V 80 A 349 W Field Stop Surface Mount IGBT - TO-263-3
***ark
600V, 40A, Field Stop Igbt / Reel
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for welder and PFC applications where low conduction and switching losses are essential.
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
Field Stop & Short Circuit Rated IGBTs
ON Semiconductor's Field Stop & short Circuit Rated IGBTs offer a variety of 600 and 650V Insulated Gate Bipolar Transistors (IGBTs) that have a collector current rating between 5A to 60A. This offers optimum performance for welding and PFC or low power inverter driven applications where low conduction, low switching losses and short circuit ruggedness features are essential. Typical applications for these include solar inverters, UPS, SMPS, welder, PFC, home appliance inverter driven (fan motor driver, circulation pump, refrigerator, dish washer), and industrial inverter (sewing machine, CNC).
Teil # Mfg. Beschreibung Aktie Preis
FGB40N60SM
DISTI # 31234754		ON Semiconductor600V 40A FIELD STOP PLANAR IGB1600
  • 800:$1.6494
FGB40N60SM
DISTI # FGB40N60SMCT-ND		ON SemiconductorIGBT 600V 80A 349W D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		774In Stock
  • 100:$2.8353
  • 10:$3.4400
  • 1:$3.8200
FGB40N60SM
DISTI # FGB40N60SMDKR-ND		ON SemiconductorIGBT 600V 80A 349W D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		774In Stock
  • 100:$2.8353
  • 10:$3.4400
  • 1:$3.8200
FGB40N60SM
DISTI # FGB40N60SMTR-ND		ON SemiconductorIGBT 600V 80A 349W D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2400:$1.9110
  • 1600:$2.0020
  • 800:$2.3569
FGB40N60SM
DISTI # FGB40N60SM		ON SemiconductorTrans IGBT Chip N-CH 600V 80A 3-Pin(2+Tab) D2PAK T/R (Alt: FGB40N60SM)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Europe - 0
  • 800:€1.8900
  • 1600:€1.7900
  • 3200:€1.6900
  • 4800:€1.5900
  • 8000:€1.4900
FGB40N60SM
DISTI # FGB40N60SM		ON SemiconductorTrans IGBT Chip N-CH 600V 80A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FGB40N60SM)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 800:$1.5900
  • 1600:$1.5900
  • 3200:$1.5900
  • 4800:$1.5900
  • 8000:$1.5900
FGB40N60SM
DISTI # 512-FGB40N60SM		ON SemiconductorIGBT Transistors 600V 40A FIELD STOP PLANAR IGBT GEN2
RoHS: Compliant		574
  • 1:$3.4500
  • 10:$2.9300
  • 100:$2.5400
  • 250:$2.4100
  • 500:$2.1600
FGB40N60SMFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-263AB
RoHS: Compliant		82
  • 1000:$1.9000
  • 500:$1.9900
  • 100:$2.0800
  • 25:$2.1700
  • 1:$2.3300
FGB40N60SM
DISTI # 8648811P		ON SemiconductorIGBT 600V 40A FIELD STOP D2PAK-2, RL22
  • 20:£2.4700
  • 200:£2.1400
  • 400:£2.0400
  • 800:£1.5500
FGB40N60SMON SemiconductorInsulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-263AB
RoHS: Compliant		Europe - 800
    FGB40N60SM
    DISTI # XSFP00000099275    		Fairchild Semiconductor Corporation 
    RoHS: Compliant    		75
    • 43:$4.7200
    • 75:$4.2900
    Bild Teil # Beschreibung
    IRS21814MTRPBF

    Mfr.#: IRS21814MTRPBF

    OMO.#: OMO-IRS21814MTRPBF

    		 Gate Drivers Hi&Lw Sd Drvr Sft Trn On Non Invrt
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    OMO.#: OMO-IKB40N65ES5ATMA1

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    IGB50N65S5ATMA1

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    OMO.#: OMO-IGB50N65S5ATMA1

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    Mfr.#: IGB50N65H5ATMA1

    OMO.#: OMO-IGB50N65H5ATMA1

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    SIR668DP-T1-RE3

    Mfr.#: SIR668DP-T1-RE3

    OMO.#: OMO-SIR668DP-T1-RE3

    		 MOSFET 100V Vds 20V Vgs PowerPAK SO-8
    SQS481ENW-T1_GE3

    Mfr.#: SQS481ENW-T1_GE3

    OMO.#: OMO-SQS481ENW-T1-GE3

    		 MOSFET -150V Vds PowerPAK AEC-Q101 Qualified
    IRS21814MTRPBF

    Mfr.#: IRS21814MTRPBF

    OMO.#: OMO-IRS21814MTRPBF-INFINEON-TECHNOLOGIES

    		 Gate Drivers Hi&Lw Sd Drvr Sft Trn On Non Invrt
    MGJ2D051509SC

    Mfr.#: MGJ2D051509SC

    OMO.#: OMO-MGJ2D051509SC-MURATA-POWER-SOLUTIONS

    		 Isolated DC/DC Converters 2W 5Vin 15/-8.7Vout 80/40mA SIP
    DSC1104CE2-027.0000T

    Mfr.#: DSC1104CE2-027.0000T

    OMO.#: OMO-DSC1104CE2-027-0000T-MICROCHIP-TECHNOLOGY

    		 Low Jitter Precision HCSL Oscillato
    SIR668DP-T1-RE3

    Mfr.#: SIR668DP-T1-RE3

    OMO.#: OMO-SIR668DP-T1-RE3-VISHAY

    		 MOSFET N-CH 100V 95A POWERPAKSO
    Verfügbarkeit
    Aktie:
    948
    Auf Bestellung:
    2931
    Menge eingeben:
    Der aktuelle Preis von FGB40N60SM dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,70 $
    2,70 $
    10
    2,30 $
    23,00 $
    100
    1,99 $
    199,00 $
    250
    1,89 $
    472,50 $
    500
    1,68 $
    840,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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