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FCP190N65F

FCP190N65F
Mfr. #:
FCP190N65F
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET SF2 650V 190MOHM F TO220
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FCP190N65F Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FCP190N65F Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
20.6 A
Rds On - Drain-Source-Widerstand:
190 mOhms
Vgs th - Gate-Source-Schwellenspannung:
5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
60 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
208 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
SuperFET II FRFET
Verpackung:
Rohr
Höhe:
16.3 mm
Länge:
10.67 mm
Serie:
FCP190N65F
Transistortyp:
1 N-Channel
Breite:
4.7 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
18 S
Abfallzeit:
4.2 ns
Produktart:
MOSFET
Anstiegszeit:
11 ns
Werkspackungsmenge:
800
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
62 ns
Typische Einschaltverzögerungszeit:
25 ns
Gewichtseinheit:
0.063493 oz
Tags
FCP190N65, FCP190, FCP19, FCP1, FCP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET® II, FRFET®, 650V, 20.6A, 190mΩ, TO-220
***Components
In a Pack of 2, N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220 ON Semiconductor FCP190N65F
***ark
SuperFET2 650V, 190 mOhm, FRFET - TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
***ical
Trans MOSFET N-CH 650V 20.6A 3-Pin(3+Tab) TO-220 Rail
***et Europe
Trans MOSFET N-CH 650V 20.6A 3-Pin TO-220 Tube
***i-Key
MOSFET N-CH 650V TO220-3
***et
SUPERFET2 650V, 190 MOHM, FRFET
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizingcharge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
SuperFET® II Power MOSFETs
ON Semiconductor SuperFET® II Power MOSFETs are a new proprietary generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. These SuperFET® II MOSFETs are suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.Learn More
Teil # Mfg. Beschreibung Aktie Preis
FCP190N65F
DISTI # 20153876		ON SemiconductorSUPERFET2 650V, 190 MOHM, FRFE800
  • 800:$1.4307
FCP190N65F
DISTI # FCP190N65F-ND		ON SemiconductorMOSFET N-CH 650V 20.6A TO220-3
RoHS: Compliant
Min Qty: 800
Container: Tube		Temporarily Out of Stock
  • 800:$1.8692
FCP190N65F
DISTI # FCP190N65F		ON SemiconductorTrans MOSFET N-CH 650V 20.6A 3-Pin TO-220 Tube - Bulk (Alt: FCP190N65F)
Min Qty: 197
Container: Bulk		Americas - 0
  • 1970:$1.4900
  • 197:$1.5900
  • 394:$1.5900
  • 591:$1.5900
  • 985:$1.5900
FCP190N65F
DISTI # FCP190N65F		ON SemiconductorTrans MOSFET N-CH 650V 20.6A 3-Pin TO-220 Tube (Alt: FCP190N65F)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€1.2900
  • 100:€1.3900
  • 500:€1.3900
  • 25:€1.4900
  • 50:€1.4900
  • 10:€1.6900
  • 1:€1.8900
FCP190N65F
DISTI # FCP190N65F		ON SemiconductorTrans MOSFET N-CH 650V 20.6A 3-Pin TO-220 Tube - Rail/Tube (Alt: FCP190N65F)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 1600:$1.2900
  • 3200:$1.2900
  • 4800:$1.2900
  • 8000:$1.2900
  • 800:$1.3900
FCP190N65F
DISTI # FCP190N65F		ON SemiconductorTrans MOSFET N-CH 650V 20.6A 3-Pin TO-220 Tube (Alt: FCP190N65F)
RoHS: Compliant
Min Qty: 800
Container: Tube		Asia - 0
  • 40000:$1.7580
  • 20000:$1.7873
  • 8000:$1.8490
  • 4000:$1.9150
  • 2400:$1.9859
  • 1600:$2.0623
  • 800:$2.1448
FCP190N65F
DISTI # 68X0361		ON SemiconductorSF2 650V 190MOHM F TO220 / TUBE0
  • 10000:$1.5500
  • 2500:$1.6400
  • 1000:$1.7200
  • 500:$2.0200
  • 100:$2.2300
  • 10:$2.6900
  • 1:$3.3200
FCP190N65F
DISTI # 512-FCP190N65F		ON SemiconductorMOSFET SF2 650V 190MOHM F TO220
RoHS: Compliant		735
  • 1:$2.8300
  • 10:$2.4100
  • 100:$2.0900
  • 250:$1.9800
  • 500:$1.7800
  • 1000:$1.5000
  • 2500:$1.4200
  • 5000:$1.3700
FCP190N65FFairchild Semiconductor CorporationPower Field-Effect Transistor, 20.6A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		362
  • 1000:$1.5700
  • 500:$1.6500
  • 100:$1.7200
  • 25:$1.7900
  • 1:$1.9300
FCP190N65F
DISTI # 8647903P		ON SemiconductorMOSFET N-CH 650V 20.6A SUPERFET II TO220, TU140
  • 200:£1.5200
  • 100:£1.5850
  • 40:£1.7000
  • 10:£1.9350
Bild Teil # Beschreibung
NTB110N65S3HF

Mfr.#: NTB110N65S3HF

OMO.#: OMO-NTB110N65S3HF

 MOSFET SUPERFET3 650V FRFET,110M
FCPF190N65S3L1

Mfr.#: FCPF190N65S3L1

OMO.#: OMO-FCPF190N65S3L1

 MOSFET SuperFET3 650V 190 mOhm, TO220F PKG
SIHA22N60AE-E3

Mfr.#: SIHA22N60AE-E3

OMO.#: OMO-SIHA22N60AE-E3

 MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
IXFP22N65X2

Mfr.#: IXFP22N65X2

OMO.#: OMO-IXFP22N65X2

 MOSFET MOSFET 650V/22A Ultra Junction X2
CRCW06038K20FKEAC

Mfr.#: CRCW06038K20FKEAC

OMO.#: OMO-CRCW06038K20FKEAC

 Thick Film Resistors - SMD 1/10Watt 8.2Kohms 1% Commercial Use
FCP190N65S3

Mfr.#: FCP190N65S3

OMO.#: OMO-FCP190N65S3

 MOSFET SuperFET3 650V 190 mOhm, TO220F PKG
VLMU3510-365-130

Mfr.#: VLMU3510-365-130

OMO.#: OMO-VLMU3510-365-130

 High Power LEDs - Single Color UV 367nm 590mW 4V InGaN 3W 65deg
CGA4J1X8R1E105K125AD

Mfr.#: CGA4J1X8R1E105K125AD

OMO.#: OMO-CGA4J1X8R1E105K125AD

 Multilayer Ceramic Capacitors MLCC - SMD/SMT EPXY 0805 25V 1uF X8R 10% AEC-Q200
IXFP22N65X2

Mfr.#: IXFP22N65X2

OMO.#: OMO-IXFP22N65X2-IXYS-CORPORATION

 MOSFET N-CH 650V 22A TO-220
CRCW06038K20FKEAC

Mfr.#: CRCW06038K20FKEAC

OMO.#: OMO-CRCW06038K20FKEAC-VISHAY-DALE

 D11/CRCW0603-C 100 8K2 1% ET1
Verfügbarkeit
Aktie:
735
Auf Bestellung:
2718
Menge eingeben:
Der aktuelle Preis von FCP190N65F dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,83 $
2,83 $
10
2,41 $
24,10 $
100
2,09 $
209,00 $
250
1,98 $
495,00 $
500
1,78 $
890,00 $
1000
1,50 $
1 500,00 $
2500
1,42 $
3 550,00 $
5000
1,37 $
6 850,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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