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STW25NM60ND

STW25NM60ND
Mfr. #:
STW25NM60ND
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-channel 600V, 21A FDMesh II
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STW25NM60ND Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STW25NM60ND Mehr Informationen STW25NM60ND Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
21 A
Rds On - Drain-Source-Widerstand:
160 mOhms
Vgs - Gate-Source-Spannung:
25 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
160 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
20.15 mm
Länge:
15.75 mm
Serie:
STB25NM60N
Transistortyp:
1 N-Channel
Breite:
5.15 mm
Marke:
STMicroelectronics
Abfallzeit:
40 ns
Produktart:
MOSFET
Anstiegszeit:
30 ns
Werkspackungsmenge:
600
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
50 ns
Typische Einschaltverzögerungszeit:
60 ns
Gewichtseinheit:
1.340411 oz
Tags
STW25NM60ND, STW25NM60N, STW25NM60, STW25NM6, STW25NM, STW25N, STW25, STW2, STW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Power Mosfet, N Channel, 21 A, 600 V, 0.13 Ohm, 10 V, 4 V Rohs Compliant: Yes
***icroelectronics
N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 package
***ure Electronics
Single N-Channel 600 V 0.16 Ohm 29 nC 160 W Silicon Flange Mount Mosfet TO-247-3
***r Electronics
Power Field-Effect Transistor, 21A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***nell
MOSFET, N CH, 600V, 21A, TO 247; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.13ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
***icroelectronics
N-channel 500 V, 0.090 Ohm, 27 A MDmesh" II Power MOSFET
***r Electronics
Power Field-Effect Transistor, 27A I(D), 500V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***nell
MOSFET, N CH, 500V, 27A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.5A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.09ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 190W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Id Max: 27A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 500V; Voltage Vgs Max: 25V; Voltage Vgs Rds on Measurement: 10V
***icroelectronics
N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh(TM) II Power MOSFET in TO-247 package
*** Source Electronics
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 Tube / MOSFET N-CH 600V 20A TO-247
***ure Electronics
Single N-Channel 600 V 140 W 60 nC MDmesh Through Hole Mosfet - TO-247-3
***ark
Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:140W; No. of Pins:3Pins RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 20A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***icroelectronics
N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-247 package
***ark
Mosfet, N-Ch, 600V, 24A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.11Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Rohs Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 24A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***emi
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 22 A, 165 mΩ, TO-247
*** Source Electronics
Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-247 Tube / MOSFET N-CH 600V 22A TO-247
***r Electronics
Power Field-Effect Transistor, 22A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***nell
MOSFET,N CH,600V,22A,TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:205W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011)
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***emi
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 23 A, 165 mΩ, TO-247
***ark
SuperFET2 600V 165mohm slow version - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
***r Electronics
Power Field-Effect Transistor, 23A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***nell
MOSFET, N-CH, 600V, 23A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 23A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.132ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V;
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET IIMOSFET series. Noted by the “E” part number suffix, this family helps manage EMI issues and allows for easier designimplementation. For faster switching in applications where switching losses must be at an absolute minimum, pleaseconsider the SuperFET II MOSFET series.
Teil # Mfg. Beschreibung Aktie Preis
STW25NM60ND
DISTI # 497-8455-5-ND		STMicroelectronicsMOSFET N-CH 600V 21A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		562In Stock
  • 510:$5.9078
  • 120:$7.0512
  • 30:$7.8137
  • 1:$9.5300
STW25NM60ND
DISTI # 511-STW25NM60ND		STMicroelectronicsMOSFET N-channel 600V, 21A FDMesh II
RoHS: Compliant		4
  • 1:$8.2500
  • 10:$7.4600
  • 25:$7.1100
  • 100:$6.1700
  • 250:$5.9000
  • 500:$5.3800
STW25NM60ND
DISTI # STW25NM60ND		STMicroelectronicsN-Ch 600V 21A 160W 0,16R TO247
RoHS: Compliant		0
  • 5:€2.6000
  • 30:€2.2000
  • 120:€2.0000
  • 300:€1.9200
STW25NM60ND
DISTI # 2098388		STMicroelectronicsMOSFET, N CH, 600V, 21A, TO 247
RoHS: Compliant		1
  • 1:£6.6300
  • 10:£5.0200
  • 100:£4.6300
  • 250:£4.4600
  • 500:£4.0300
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OMO.#: OMO-TCAN332DR

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TPL0202-10MRTER

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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5000
Menge eingeben:
Der aktuelle Preis von STW25NM60ND dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
8,24 $
8,24 $
10
7,45 $
74,50 $
25
7,10 $
177,50 $
100
6,16 $
616,00 $
250
5,89 $
1 472,50 $
500
5,37 $
2 685,00 $
1000
4,67 $
4 670,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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