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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Teil # | Mfg. | Beschreibung | Aktie | Preis |
---|---|---|---|---|
NE3503M04-T2B-A DISTI # NE3503M04-T2B-A-ND | California Eastern Laboratories (CEL) | FET RF 4V 12GHZ M04 Min Qty: 1 Container: Tape & Reel (TR) | Limited Supply - Call | |
NE3503M04-T2B-A DISTI # NE3503M04-T2B-A | Renesas Electronics Corporation | - Bulk (Alt: NE3503M04-T2B-A) Min Qty: 439 Container: Bulk | Americas - 0 |
|
NE3503M04-T2B-A | Renesas Electronics Corporation | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET RoHS: Compliant | 164000 |
|
NE3503M04-T2B-A DISTI # NE3503M04-T2B-A | Renesas Electronics Corporation | RF SMALL SIGNAL TRANSISTOR HFET RoHS: Compliant | 0 |
Bild | Teil # | Beschreibung |
---|---|---|
Mfr.#: NE3503M04-A OMO.#: OMO-NE3503M04-A |
RF JFET Transistors Low Noise HJ FET | |
Mfr.#: NE3503M04T2A OMO.#: OMO-NE3503M04T2A-1190 |
Neu und Original | |
Mfr.#: NE3503M04-T2-A OMO.#: OMO-NE3503M04-T2-A-CEL |
Neu und Original | |
Mfr.#: NE3503M04-A OMO.#: OMO-NE3503M04-A-CEL |
RF JFET Transistors Low Noise HJ FET | |
Mfr.#: NE3503M04 OMO.#: OMO-NE3503M04-1190 |
Neu und Original | |
Mfr.#: NE3503M04-T1-A OMO.#: OMO-NE3503M04-T1-A-1190 |
Neu und Original | |
Mfr.#: NE3503M04-T2 OMO.#: OMO-NE3503M04-T2-1190 |
Neu und Original | |
Mfr.#: NE3503M04-T2 , ELM99501A |
Neu und Original | |
Mfr.#: NE3503M04-T2B OMO.#: OMO-NE3503M04-T2B-1190 |
Neu und Original | |
Mfr.#: NE3503M04-T2B-A OMO.#: OMO-NE3503M04-T2B-A-CEL |
FET RF 4V 12GHZ M04 |