NE3503M04-A

NE3503M04-A
Mfr. #:
NE3503M04-A
Hersteller:
CEL
Beschreibung:
RF JFET Transistors Low Noise HJ FET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NE3503M04-A Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
NEC
Produktkategorie
HF-FETs
Montageart
SMD/SMT
Paket-Koffer
FTSMM-4 (M04)
Technologie
GaAs
Transistor-Typ
HFET
Gewinnen
12 dB
Pd-Verlustleistung
125 mW
Maximale-Betriebstemperatur
+ 125 C
Arbeitsfrequenz
12 GHz
ID-Dauer-Drain-Strom
70 mA
Vds-Drain-Source-Breakdown-Voltage
4 V
Transistor-Polarität
N-Kanal
Vorwärts-Transkonduktanz-Min
55 mS
Vgs-Gate-Source-Breakdown-Voltage
- 3 V
Gate-Source-Cutoff-Spannung
- 0.7 V
NF-Geräusch-Abbildung
0.45 dB
Tags
NE3503M0, NE3503M, NE3503, NE350, NE35, NE3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans JFET N-CH 4V 70mA 4-Pin Thin-Type Super Mini-Mold
***i-Key
FET RF 4V 12GHZ M04
Teil # Mfg. Beschreibung Aktie Preis
NE3503M04-A
DISTI # NE3503M04-A-ND
California Eastern Laboratories (CEL)FET RF 4V 12GHZ M04
RoHS: Compliant
Min Qty: 100
Container: Bulk
Limited Supply - Call
    NE3503M04-A
    DISTI # 551-NE3503M04-A
    California Eastern Laboratories (CEL)RF JFET Transistors Low Noise HJ FET
    RoHS: Compliant
    0
      Bild Teil # Beschreibung
      NE3503M04T2A

      Mfr.#: NE3503M04T2A

      OMO.#: OMO-NE3503M04T2A-1190

      Neu und Original
      NE3508M04-A

      Mfr.#: NE3508M04-A

      OMO.#: OMO-NE3508M04-A-CEL

      RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET
      NE350184C-T1A

      Mfr.#: NE350184C-T1A

      OMO.#: OMO-NE350184C-T1A-1152

      RF JFET Transistors Low Noise HJ FET
      NE3503M04

      Mfr.#: NE3503M04

      OMO.#: OMO-NE3503M04-1190

      Neu und Original
      NE3503M04-T2B

      Mfr.#: NE3503M04-T2B

      OMO.#: OMO-NE3503M04-T2B-1190

      Neu und Original
      NE3503MO4-T2

      Mfr.#: NE3503MO4-T2

      OMO.#: OMO-NE3503MO4-T2-1190

      Neu und Original
      NE3505M04-T2

      Mfr.#: NE3505M04-T2

      OMO.#: OMO-NE3505M04-T2-1190

      Neu und Original
      NE3505M04-T2 , EM-0711

      Mfr.#: NE3505M04-T2 , EM-0711

      OMO.#: OMO-NE3505M04-T2-EM-0711-1190

      Neu und Original
      NE3508M04T2A

      Mfr.#: NE3508M04T2A

      OMO.#: OMO-NE3508M04T2A-1190

      Neu und Original
      NE3509M04-T2-A/80

      Mfr.#: NE3509M04-T2-A/80

      OMO.#: OMO-NE3509M04-T2-A-80-1190

      Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      5500
      Menge eingeben:
      Der aktuelle Preis von NE3503M04-A dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
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      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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