NE3508M04-A

NE3508M04-A
Mfr. #:
NE3508M04-A
Hersteller:
CEL
Beschreibung:
RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NE3508M04-A Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NE3508M04-A DatasheetNE3508M04-A Datasheet (P4-P6)NE3508M04-A Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
CEL
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Verpackung
Schüttgut
Montageart
SMD/SMT
Paket-Koffer
FTSMM-4 (M04)
Technologie
GaAs
Transistor-Typ
HFET
Gewinnen
14 dB
Pd-Verlustleistung
175 mW
Maximale-Betriebstemperatur
+ 150 C
Arbeitsfrequenz
2 GHz
ID-Dauer-Drain-Strom
120 mA
Vds-Drain-Source-Breakdown-Voltage
4 V
Transistor-Polarität
N-Kanal
Vorwärts-Transkonduktanz-Min
100 mS
Vgs-Gate-Source-Breakdown-Voltage
- 3 V
NF-Geräusch-Abbildung
0.45 dB
P1dB-Kompressionspunkt
18 dBm
Tags
NE3508, NE350, NE35, NE3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Japan
Trans JFET N-CH 4V 120mA 4-Pin Super Mini-Mold(Flat Lead)
***i-Key
FET RF 4V 2GHZ 4-TSMM
Teil # Mfg. Beschreibung Aktie Preis
NE3508M04-A
DISTI # NE3508M04-A-ND
California Eastern Laboratories (CEL)FET RF 4V 2GHZ 4-TSMM
RoHS: Compliant
Min Qty: 130
Container: Bulk
Limited Supply - Call
    NE3508M04-A
    DISTI # 551-NE3508M04-A
    California Eastern Laboratories (CEL)RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET
    RoHS: Compliant
    0
      Bild Teil # Beschreibung
      NE3509M04-A

      Mfr.#: NE3509M04-A

      OMO.#: OMO-NE3509M04-A

      RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET
      NE3509M04-EVNF24-A

      Mfr.#: NE3509M04-EVNF24-A

      OMO.#: OMO-NE3509M04-EVNF24-A

      RF Development Tools For NE3509M04-A
      NE3508M04-A

      Mfr.#: NE3508M04-A

      OMO.#: OMO-NE3508M04-A-CEL

      RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET
      NE350184C-T1A(PB)

      Mfr.#: NE350184C-T1A(PB)

      OMO.#: OMO-NE350184C-T1A-PB--1190

      Neu und Original
      NE3503M04

      Mfr.#: NE3503M04

      OMO.#: OMO-NE3503M04-1190

      Neu und Original
      NE3503M04-T2B-A/JT

      Mfr.#: NE3503M04-T2B-A/JT

      OMO.#: OMO-NE3503M04-T2B-A-JT-1190

      Neu und Original
      NE3505M04-T2

      Mfr.#: NE3505M04-T2

      OMO.#: OMO-NE3505M04-T2-1190

      Neu und Original
      NE3508M04

      Mfr.#: NE3508M04

      OMO.#: OMO-NE3508M04-1190

      Neu und Original
      NE3508M04-T2-A/79

      Mfr.#: NE3508M04-T2-A/79

      OMO.#: OMO-NE3508M04-T2-A-79-1190

      Neu und Original
      NE3509M04-T2-A/80

      Mfr.#: NE3509M04-T2-A/80

      OMO.#: OMO-NE3509M04-T2-A-80-1190

      Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1500
      Menge eingeben:
      Der aktuelle Preis von NE3508M04-A dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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