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IRLHM630TRPBF

IRLHM630TRPBF
Mfr. #:
IRLHM630TRPBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET 30V 1 N-CH HEXFET 3.5mOhms 41nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRLHM630TRPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PQFN-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
40 A
Rds On - Drain-Source-Widerstand:
3.5 mOhms
Vgs th - Gate-Source-Schwellenspannung:
800 mV
Vgs - Gate-Source-Spannung:
12 V
Qg - Gate-Ladung:
41 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.7 W
Aufbau:
Single
Verpackung:
Spule
Höhe:
1.05 mm
Länge:
3.3 mm
Transistortyp:
1 N-Channel
Breite:
3.3 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
140 S
Abfallzeit:
43 ns
Produktart:
MOSFET
Anstiegszeit:
32 ns
Werkspackungsmenge:
4000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
65 ns
Typische Einschaltverzögerungszeit:
9.1 ns
Teil # Aliase:
SP001568974
Gewichtseinheit:
0.025609 oz
Tags
IRLHM630TRP, IRLHM630T, IRLHM63, IRLHM, IRLH, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***el Electronic
INFINEON IRLHM630TRPBF MOSFET Transistor, N Channel, 21 A, 30 V, 2.8 mohm, 4.5 V, 800 mV
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a PQFN 3.3 by 3.3 package, PG-TSDSON-8, RoHS
***roFlash
Single N-Channel 20 V 4.5 mOhm 41 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
*** Source Electronics
Battery Operated DC Motor Inverter MOSFET | MOSFET N-CH 30V 21A PQFN
***ied Electronics & Automation
MOSFET, 20V, 40A, 3.5 MOHM, 2.5V DRIVE CAPABLE, PQFN3.3X3.3
***nell
MOSFET,N CH,DIODE,30V,21A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2800µohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Current Id Max:21A; Voltage Vgs Max:12V
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Thermal Resistance to PCB (less than 3.4C/W); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Operated Drive; Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side
Teil # Mfg. Beschreibung Aktie Preis
IRLHM630TRPBF
DISTI # V72:2272_13890337		Infineon Technologies AGTrans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R
RoHS: Compliant		3453
  • 3000:$0.3291
  • 1000:$0.3656
  • 500:$0.4362
  • 250:$0.5003
  • 100:$0.5020
  • 25:$0.6104
  • 10:$0.6133
  • 1:$0.6898
IRLHM630TRPBF
DISTI # IRLHM630TRPBFCT-ND		Infineon Technologies AGMOSFET N-CH 30V 21A PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1953In Stock
  • 1000:$0.5236
  • 500:$0.6489
  • 100:$0.8211
  • 10:$1.0240
  • 1:$1.1500
IRLHM630TRPBF
DISTI # IRLHM630TRPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 30V 21A PQFN
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1953In Stock
  • 1000:$0.5236
  • 500:$0.6489
  • 100:$0.8211
  • 10:$1.0240
  • 1:$1.1500
IRLHM630TRPBF
DISTI # IRLHM630TRPBFTR-ND		Infineon Technologies AGMOSFET N-CH 30V 21A PQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		On Order
  • 4000:$0.4780
IRLHM630TRPBF
DISTI # 30313429		Infineon Technologies AGTrans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R
RoHS: Compliant		4000
  • 4000:$0.4270
IRLHM630TRPBF
DISTI # 30286470		Infineon Technologies AGTrans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R
RoHS: Compliant		3453
  • 3000:$0.3291
  • 1000:$0.3656
  • 500:$0.4362
  • 250:$0.5003
  • 100:$0.5020
  • 25:$0.6104
  • 23:$0.6133
IRLHM630TRPBF
DISTI # IRLHM630TRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R (Alt: IRLHM630TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Asia - 0
    IRLHM630TRPBF
    DISTI # IRLHM630TRPBF    		Infineon Technologies AGTrans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R - Tape and Reel (Alt: IRLHM630TRPBF)
    RoHS: Compliant
    Min Qty: 4000
    Container: Reel    		Americas - 0
    • 4000:$0.3179
    • 8000:$0.3059
    • 16000:$0.2949
    • 24000:$0.2849
    • 40000:$0.2799
    IRLHM630TRPBF
    DISTI # SP001568974    		Infineon Technologies AGTrans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R (Alt: SP001568974)
    RoHS: Compliant
    Min Qty: 4000
    Container: Tape and Reel    		Europe - 0
    • 4000:€0.4509
    • 8000:€0.3689
    • 16000:€0.3379
    • 24000:€0.3119
    • 40000:€0.2899
    IRLHM630TRPBF
    DISTI # 75T9982    		Infineon Technologies AGMOSFET Transistor, N Channel, 21 A, 30 V, 2.8 mohm, 4.5 V, 800 mV RoHS Compliant: Yes4680
    • 1:$1.1000
    • 10:$0.9700
    • 100:$0.7670
    • 500:$0.5940
    • 1000:$0.4690
    IRLHM630TRPBF
    DISTI # 942-IRLHM630TRPBF    		Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET 3.5mOhms 41nC
    RoHS: Compliant    		4381
    • 1:$0.9100
    • 10:$0.7740
    • 100:$0.5950
    • 500:$0.5250
    • 1000:$0.4150
    • 4000:$0.3680
    IRLHM630TRPBFInternational RectifierPower Field-Effect Transistor, 21A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		1900
    • 1000:$0.3700
    • 500:$0.3900
    • 100:$0.4000
    • 25:$0.4200
    • 1:$0.4500
    IRLHM630TRPBFInternational Rectifier 
    RoHS: Compliant    		Europe - 4000
      IRLHM630TRPBF
      DISTI # C1S322000588011      		Infineon Technologies AGTrans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R
      RoHS: Compliant      		4000
      • 4000:$0.4920
      IRLHM630TRPBF
      DISTI # C1S322000595552      		Infineon Technologies AGTrans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R
      RoHS: Compliant      		3953
      • 250:$0.5003
      • 100:$0.5020
      • 25:$0.6104
      • 10:$0.6133
      IRLHM630TRPBF
      DISTI # 1857349      		Infineon Technologies AGMOSFET,N CH,DIODE,30V,21A,PQFN33
      RoHS: Compliant      		4680
      • 1:$1.4400
      • 10:$1.2300
      • 100:$0.9420
      • 500:$0.8310
      • 1000:$0.6570
      • 4000:$0.5830
      IRLHM630TRPBF
      DISTI # 1857349      		Infineon Technologies AGMOSFET,N CH,DIODE,30V,21A,PQFN33
      RoHS: Compliant      		4909
      • 5:£0.7370
      • 25:£0.5940
      • 100:£0.4550
      • 250:£0.4280
      • 500:£0.4010
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1989
      Menge eingeben:
      Der aktuelle Preis von IRLHM630TRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,90 $
      0,90 $
      10
      0,77 $
      7,74 $
      100
      0,60 $
      59,50 $
      500
      0,52 $
      262,50 $
      1000
      0,42 $
      415,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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