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| PartNumber | IRLHM630TRPBF | IRLHM630TR2PBF | IRLHM630TR2PBF. |
| Description | MOSFET 30V 1 N-CH HEXFET 3.5mOhms 41nC | MOSFET N-CH 30V 21A PQFN | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PQFN-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 40 A | - | - |
| Rds On Drain Source Resistance | 3.5 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 800 mV | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Qg Gate Charge | 41 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.7 W | - | - |
| Configuration | Single | - | - |
| Packaging | Reel | - | - |
| Height | 1.05 mm | - | - |
| Length | 3.3 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 3.3 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 140 S | - | - |
| Fall Time | 43 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 32 ns | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 65 ns | - | - |
| Typical Turn On Delay Time | 9.1 ns | - | - |
| Part # Aliases | SP001568974 | - | - |
| Unit Weight | 0.025609 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IRLHM630TRPBF | MOSFET 30V 1 N-CH HEXFET 3.5mOhms 41nC | |
| IRLHM630TR2PBF | MOSFET N-CH 30V 21A PQFN | ||
| IRLHM630TRPBF | MOSFET N-CH 30V 21A PQFN | ||
| IRLHM630TRPBF. | Neu und Original | ||
| IRLHM630TRPBF-CUT TAPE | Neu und Original | ||
| IRLHM630TR2PBF. | Neu und Original |