BSC036NE7NS3G

Mfr. #:: BSC036NE7NS3G
Hersteller:: Infineo
Beschreibung:: POWER FIELD-EFFECT TRANSISTOR, 20A I(D), 75V, 0.0036OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: BSC036NE7NS3G Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller: Infineo

Produktkategorie: Transistoren - FETs, MOSFETs - Single

Serie: BSC036NE7

Verpackung: Spule

Teil-Aliasnamen: BSC036NE7NS3 BSC036NE7NS3GXT G SP000907920

Montageart: SMD/SMT

Handelsname: OptiMOS

Paket-Koffer: TDSON-8

Technologie: Si

Anzahl der Kanäle: 1 Channel

Transistor-Typ: 1 N-Channel

ID-Dauer-Drain-Strom: 100 A

Vds-Drain-Source-Breakdown-Voltage: 75 V

Rds-On-Drain-Source-Widerstand: 3.6 mOhms

Transistor-Polarität: N-Kanal

Tags: BSC036, BSC03, BSC0, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
BSC036NE7NS3GATMA1 DISTI # BSC036NE7NS3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 75V 100A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	5000:$1.5817
BSC036NE7NS3GATMA1 DISTI # BSC036NE7NS3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 75V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$1.7819 500:$2.1129 100:$2.6093 10:$3.1820 1:$3.5600
BSC036NE7NS3GATMA1 DISTI # BSC036NE7NS3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 75V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$1.7819 500:$2.1129 100:$2.6093 10:$3.1820 1:$3.5600
BSC036NE7NS3 G DISTI # BSC036NE7NS3 G	Infineon Technologies AG	Trans MOSFET N-CH 75V 20A 8-Pin TDSON T/R (Alt: BSC036NE7NS3 G) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Asia - 0
BSC036NE7NS3GXT DISTI # BSC036NE7NS3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 75V 20A 8-Pin TDSON - Tape and Reel (Alt: BSC036NE7NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$1.5900 10000:$1.4900 20000:$1.4900 30000:$1.3900 50000:$1.3900
BSC036NE7NS3GATMA1 DISTI # 50Y1801	Infineon Technologies AG	MOSFET Transistor, N Channel, 100 A, 75 V, 0.0029 ohm, 10 V, 3.1 V RoHS Compliant: Yes	4510	1:$2.9800 10:$2.5300 25:$2.4200 50:$2.3100 100:$2.2000 250:$2.0800 500:$1.8700 1000:$1.5800
BSC036NE7NS3 G DISTI # 726-BSC036NE7NS3G	Infineon Technologies AG	MOSFET N-Ch 75V 100A TDSON-8 RoHS: Compliant	8280	1:$2.9800 10:$2.5300 100:$2.2000 250:$2.0800 500:$1.8700 1000:$1.5800 2500:$1.5000 5000:$1.4400
BSC036NE7NS3GATMA1 DISTI # 726-BSC036NE7NS3GATM	Infineon Technologies AG	MOSFET N-Ch 75V 100A TDSON-8 RoHS: Compliant	0	1:$2.9800 10:$2.5300 100:$2.2000 250:$2.0800 500:$1.8700 1000:$1.5800 2500:$1.5000 5000:$1.4400
BSC036NE7NS3G	Infineon Technologies AG	POWER FIELD-EFFECT TRANSISTOR, 20A I(D), 75V, 0.0036OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET	312	251:$3.5640 59:$3.9960 1:$6.4800
BSC036NE7NS3 G	Infineon Technologies AG		738
BSC036NE7NS3GATMA1 DISTI # 2480736RL	Infineon Technologies AG	MOSFET, N-CH, 75V, 100A, TDSON-8 RoHS: Compliant	0	1:$4.7200 10:$4.0100 100:$3.4900 250:$3.2900 500:$2.9700 1000:$2.5000 2500:$2.3800 5000:$2.2800
BSC036NE7NS3GATMA1 DISTI # 2480736	Infineon Technologies AG	MOSFET, N-CH, 75V, 100A, TDSON-8 RoHS: Compliant	4400	1:$4.7200 10:$4.0100 100:$3.4900 250:$3.2900 500:$2.9700 1000:$2.5000 2500:$2.3800 5000:$2.2800
BSC036NE7NS3 G	Infineon Technologies AG	RoHS(ship within 1day)	390	1:$4.1200 10:$3.3800 50:$2.7200 100:$2.3200 500:$2.2100 1000:$2.1600
BSC036NE7NS3GATMA1 DISTI # 2480736	Infineon Technologies AG	MOSFET, N-CH, 75V, 100A, TDSON-8 RoHS: Compliant	6318	1:£3.2400 10:£2.4400 100:£2.1200

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: BSC036NE7NS3 G OMO.#: OMO-BSC036NE7NS3-G	MOSFET N-Ch 75V 100A TDSON-8
	Mfr.#: BSC036NE7NS3GATMA1 OMO.#: OMO-BSC036NE7NS3GATMA1	MOSFET N-Ch 75V 100A TDSON-8
	Mfr.#: BSC036NE7NS3GXT OMO.#: OMO-BSC036NE7NS3GXT-1190	Trans MOSFET N-CH 75V 20A 8-Pin TDSON - Tape and Reel (Alt: BSC036NE7NS3GATMA1)
	Mfr.#: BSC036NE7NS3 G OMO.#: OMO-BSC036NE7NS3-G-1190	Trans MOSFET N-CH 75V 20A 8-Pin TDSON T/R (Alt: BSC036NE7NS3 G)
	Mfr.#: BSC036NE7NS3G OMO.#: OMO-BSC036NE7NS3G-1190	POWER FIELD-EFFECT TRANSISTOR, 20A I(D), 75V, 0.0036OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
	Mfr.#: BSC036NE7NS3GATMA1 OMO.#: OMO-BSC036NE7NS3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-Ch 75V 100A TDSON-8

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 5500
Menge eingeben:

Der aktuelle Preis von BSC036NE7NS3G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~5,35 $~~; ~~5,35 $~~

10: ~~5,08 $~~; ~~50,79 $~~

100: ~~4,81 $~~; ~~481,14 $~~

500: ~~4,54 $~~; ~~2 272,05 $~~

1000: ~~4,28 $~~; ~~4 276,80 $~~

Beginnen mit

BSC036 4
BSC03 76
BSC0 601
BSC 999

BSC036NE7NS3G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes