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MRF6V2150NBR1

MRF6V2150NBR1
Mfr. #:
MRF6V2150NBR1
Hersteller:
NXP Semiconductors
Beschreibung:
RF MOSFET Transistors VHV6 150W
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
MRF6V2150NBR1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
MRF6V2150NBR1 Mehr Informationen MRF6V2150NBR1 Product Details
Produkteigenschaft
Attributwert
Hersteller
FSL
Produktkategorie
Modul
Serie
MRF6V2150N
Typ
HF-Leistungs-MOSFET
Verpackung
Spule
Gewichtseinheit
0.067412 oz
Montageart
SMD/SMT
Paket-Koffer
TO-272 WB EP
Technologie
Si
Gewinnen
25 dB
Ausgangsleistung
150 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 65 C
Arbeitsfrequenz
220 MHz
Vgs-Gate-Source-Spannung
- 0.5 V 12 V
Vds-Drain-Source-Breakdown-Voltage
110 V
Vgs-th-Gate-Source-Threshold-Voltage
1.62 V
Transistor-Polarität
N-Kanal
Tags
MRF6V2150NBR, MRF6V2150NB, MRF6V2150N, MRF6V21, MRF6V2, MRF6V, MRF6, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
MRF6Vx Lateral N-Ch Broadband RF Power MOSFETs
NXP's MRF6Vx Lateral N-Channel Broadband RF Power MOSFETs are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. They can be used single-ended or in a push-pull configuration and are suitable for linear applications with appropriate biasing. These RF MOSFETs are capable of handling a load mismatch of 65:1 VSWR, a 50 VDC, 230 MHz at all phase angles.Learn More
Teil # Mfg. Beschreibung Aktie Preis
MRF6V2150NBR1
DISTI # 24346163		NXP SemiconductorsTrans RF MOSFET N-CH 110V 5-Pin TO-272 W T/R
RoHS: Compliant		720
  • 2:$63.2500
MRF6V2150NBR1
DISTI # 30289379		NXP SemiconductorsTrans RF MOSFET N-CH 110V 5-Pin TO-272 W T/R
RoHS: Compliant		60
  • 2:$63.2500
MRF6V2150NBR1
DISTI # MRF6V2150NBR1CT-ND		NXP SemiconductorsFET RF 110V 220MHZ TO-272-4
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1035In Stock
  • 100:$52.5772
  • 10:$58.6290
  • 1:$62.4100
MRF6V2150NBR1
DISTI # MRF6V2150NBR1DKR-ND		NXP SemiconductorsFET RF 110V 220MHZ TO-272-4
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1035In Stock
  • 100:$52.5772
  • 10:$58.6290
  • 1:$62.4100
MRF6V2150NBR1
DISTI # MRF6V2150NBR1TR-ND		NXP SemiconductorsFET RF 110V 220MHZ TO-272-4
RoHS: Compliant
Min Qty: 500
Container: Tape & Reel (TR)		1000In Stock
  • 500:$48.8424
MRF6V2150NBR1
DISTI # C1S233100141647		NXP SemiconductorsTrans RF MOSFET N-CH 110V 5-Pin TO-272 WB EP T/R
RoHS: Compliant		720
  • 50:$61.2000
  • 25:$61.9000
  • 10:$62.5000
  • 5:$71.8000
  • 1:$87.0000
MRF6V2150NBR1
DISTI # MRF6V2150NBR1		Avnet, Inc.Trans MOSFET N-CH 110V 5-Pin TO-272 WB EP T/R - Tape and Reel (Alt: MRF6V2150NBR1)
RoHS: Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 500:$53.4900
  • 1000:$51.3900
  • 2000:$49.3900
  • 3000:$47.5900
  • 5000:$46.6900
MRF6V2150NBR1
DISTI # 45AC7382		NXP SemiconductorsTRANSISTOR, RF, 110V, TO-272,Drain Source Voltage Vds:110V,Continuous Drain Current Id:-,Power Dissipation Pd:150W,Operating Frequency Min:10MHz,Operating Frequency Max:450MHz,RF Transistor Case:TO-272,No. of Pins:4Pins,RoHS Compliant: Yes386
  • 1:$60.9600
  • 10:$57.6900
  • 25:$54.7500
  • 50:$52.9200
  • 100:$48.5600
  • 250:$47.1200
  • 500:$45.6500
MRF6V2150NBR1
DISTI # 47M2187		NXP SemiconductorsRF MOSFET, N CHANNEL, 110V, TO-272, FULL REEL,Drain Source Voltage Vds:110V,Continuous Drain Current Id:2.5mA,Power Dissipation Pd:150W,Operating Frequency Min:10MHz,Operating Frequency Max:450MHz,RF Transistor Case:TO-272 RoHS Compliant: Yes0
  • 1:$73.4500
MRF6V2150NBR1
DISTI # 841-MRF6V2150NBR1		NXP SemiconductorsRF MOSFET Transistors VHV6 150W
RoHS: Compliant		0
  • 500:$47.3800
MRF6V2150NBR5
DISTI # 841-MRF6V2150NBR5		NXP SemiconductorsRF MOSFET Transistors VHV6 150W Latrl N-Ch SE Broadband MOSFET
RoHS: Compliant		0
    MRF6V2150NBR1
    DISTI # MRF6V2150NBR1    		NXP SemiconductorsRF POWER TRANSISTOR
    RoHS: Compliant    		2298
    • 1:$63.2100
    • 10:$58.4200
    • 25:$56.7100
    MRF6V2150NBR1
    DISTI # 2820249    		NXP SemiconductorsTRANSISTOR, RF, 110V, TO-272
    RoHS: Compliant    		386
    • 1:£49.8000
    • 5:£48.2900
    • 10:£46.7800
    • 50:£41.9500
    MRF6V2150NBR1
    DISTI # 2820249    		NXP SemiconductorsTRANSISTOR, RF, 110V, TO-272
    RoHS: Compliant    		386
    • 1:$87.7600
    • 5:$84.8300
    • 10:$80.7900
    • 50:$78.3100
    Bild Teil # Beschreibung
    MRF6V2150NBR1

    Mfr.#: MRF6V2150NBR1

    OMO.#: OMO-MRF6V2150NBR1

    		 RF MOSFET Transistors VHV6 150W
    MRF6V2300NBR1

    Mfr.#: MRF6V2300NBR1

    OMO.#: OMO-MRF6V2300NBR1

    		 RF MOSFET Transistors VHV6 300W TO272WB4N
    MRF6V2010GNR5

    Mfr.#: MRF6V2010GNR5

    OMO.#: OMO-MRF6V2010GNR5

    		 RF MOSFET Transistors VHV6 10W TO270-2GN
    MRF6V2010NBR1

    Mfr.#: MRF6V2010NBR1

    OMO.#: OMO-MRF6V2010NBR1-NXP-SEMICONDUCTORS

    		 FET RF 110V 220MHZ TO272-2
    MRF6V2150NB

    Mfr.#: MRF6V2150NB

    OMO.#: OMO-MRF6V2150NB-1190

    		 Neu und Original
    MRF6V2150NBR

    Mfr.#: MRF6V2150NBR

    OMO.#: OMO-MRF6V2150NBR-1190

    		 Neu und Original
    MRF6V2150NBR5

    Mfr.#: MRF6V2150NBR5

    OMO.#: OMO-MRF6V2150NBR5-NXP-SEMICONDUCTORS

    		 RF MOSFET Transistors VHV6 150W Latrl N-Ch SE Broadband MOSFET
    MRF6V2300NBR1

    Mfr.#: MRF6V2300NBR1

    OMO.#: OMO-MRF6V2300NBR1-NXP-SEMICONDUCTORS

    		 RF MOSFET Transistors VHV6 300W TO272WB4N
    MRF6V2150NBR1

    Mfr.#: MRF6V2150NBR1

    OMO.#: OMO-MRF6V2150NBR1-NXP-SEMICONDUCTORS

    		 RF MOSFET Transistors VHV6 150W
    MRF6V2150NR1

    Mfr.#: MRF6V2150NR1

    OMO.#: OMO-MRF6V2150NR1-NXP-SEMICONDUCTORS

    		 RF MOSFET Transistors VHV6 150W
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5000
    Menge eingeben:
    Der aktuelle Preis von MRF6V2150NBR1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    67,40 $
    67,40 $
    10
    64,03 $
    640,25 $
    100
    60,66 $
    6 065,55 $
    500
    57,29 $
    28 642,90 $
    1000
    53,92 $
    53 916,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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