MRF6V2300NBR1

Mfr. #:: MRF6V2300NBR1
Hersteller:: NXP / Freescale
Beschreibung:: RF MOSFET Transistors VHV6 300W TO272WB4N
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: MRF6V2300NBR1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: NXP

Produktkategorie:: HF-MOSFET-Transistoren

RoHS:: E

Polarität des Transistors:: N-Kanal

Technologie:: Si

Vds - Drain-Source-Durchbruchspannung:: 110 V

Minimale Betriebstemperatur:: - 65 C

Maximale Betriebstemperatur:: + 150 C

Montageart:: SMD/SMT

Paket / Koffer:: TO-272-4

Verpackung:: Spule

Aufbau:: Single Dual Drain Dual Gate

Höhe:: 2.64 mm

Länge:: 23.67 mm

Serie:: MRF6V2300N

Typ:: HF-Leistungs-MOSFET

Breite:: 9.07 mm

Marke:: NXP / Freescale

Kanalmodus:: Erweiterung

Feuchtigkeitsempfindlich:: ja

Produktart:: HF-MOSFET-Transistoren

Werkspackungsmenge:: 500

Unterkategorie:: MOSFETs

Vgs - Gate-Source-Spannung:: - 0.5 V, 10 V

Teil # Aliase:: 935309671528

Gewichtseinheit:: 0.067412 oz

Tags: MRF6V2300NB, MRF6V23, MRF6V2, MRF6V, MRF6, MRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MRF6V2300NBR1 Beschreibung

***escale Semiconductor: Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-600 MHz, 300 W, 50 V

***W: RF Power Transistor,10 to 600 MHz, 300 W, Typ Gain in dB is 25.5 @ 220 MHz, 50 V, LDMOS, SOT1735

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:2.5mA; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.63V; Package/Case:TO-272 ;RoHS Compliant: Yes

***nell: RF, MOSFET, N, 600MHZ, 300W, 4TO272; Drain Source Voltage Vds: 100V; Continuous Drain Current Id: 150mA; Power Dissipation Pd: 300W; Operating Frequency Min: 10MHz; Operating Frequency Max: 600MHz; RF Transistor Case: TO-272;

***W: RF Power Transistor,10 to 450 MHz, 10 W, Typ Gain in dB is 23.9 @ 220 MHz, 50 V, LDMOS, SOT1732

*** Semiconductors SCT: Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V, FM2F

***nell: TRANSISTOR, RF, 110V, TO-270-2; Drain Source Voltage Vds: 110VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 10MHz; Operating Frequency Max: 450MHz; RF Transistor Case: TO-270; No. of Pins: 2Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)

***escale Semiconductor: Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-600 MHz, 300 W, 50 V

*** Electronics: FREESCALE SEMICONDUCTOR MRF6V4300NBR5 RF MOSFET, N CHANNEL, 110V, TO-272

*** Electronic Components: RF MOSFET Transistors VHV6 300W Latrl N-Ch SE Broadband MOSFET

***or: RF POWER FIELD-EFFECT TRANSISTOR

***ark: RF MOSFET, N CHANNEL, 110V, TO-272; Transistor Type:RF FET; Drain Source Voltage, Vds:110V; RF Transistor Case:TO-272; Gain:22dB; Gate-Source Voltage:10V; Operating Frequency Max:450MHz; Output Power, Pout:300W

*** Semiconductors SCT: Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V, FM2F

***et: Transistor RF FET N-CH 110V 10MHz to 450MHz 2-Pin TO-272 T/R

*** Electronic Components: RF MOSFET Transistors VHV6 10W TO272-2N

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:50µA; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.68V; Package/Case:TO-272 ;RoHS Compliant: Yes

***(Formerly Allied Electronics): IRLL110TRPBF N-channel MOSFET Transistor; 1.5 A; 100 V; 3 + Tab-Pin SOT-223

***eco: Trans MOSFET N Channel 100 Volt 1.5A 4-Pin (3+Tab) SOT-223 Tape and Reel

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223-3

*** Source Electronics: Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 1.5A SOT223

***nsix Microsemi: Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

***hard Electronics: Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ark: N Channel Mosfet, 100V, 4.3A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No

***ment14 APAC: MOSFET, N, 100V, 4.3A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.3A; Junction to Case Thermal Resistance A:5°C/W; On State resistance @ Vgs = 10V:540mohm; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:17A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252

***ical: Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK T/R

***ment14 APAC: MOSFET, N-CH, 100V, 4.3A, TO-252AA

*** Services: CoC and 2-years warranty / RFQ for pricing

***S: French Electronic Distributor since 1988

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Product Range:- Rohs Compliant: No

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
MRF6V2300NBR1 DISTI # V72:2272_07204050	NXP Semiconductors	Trans RF MOSFET N-CH 110V 5-Pin TO-272 W T/R RoHS: Compliant	498	75000:$107.3300 30000:$108.5300 15000:$109.7200 6000:$110.9200 3000:$112.1200 1000:$113.3200 500:$114.5200 250:$114.6400 100:$117.1500 50:$123.7700 25:$124.9500 10:$127.5300 1:$133.6200
MRF6V2300NBR1 DISTI # MRF6V2300NBR1CT-ND	NXP Semiconductors	FET RF 110V 220MHZ TO-272-4 RoHS: Not compliant Min Qty: 1 Container: Cut Tape (CT)	115In Stock	10:$129.5280 1:$135.9600
MRF6V2300NBR1 DISTI # MRF6V2300NBR1TR-ND	NXP Semiconductors	FET RF 110V 220MHZ TO-272-4 RoHS: Not compliant Min Qty: 500 Container: Tape & Reel (TR)	Limited Supply - Call
MRF6V2300NBR1 DISTI # MRF6V2300NBR1DKR-ND	NXP Semiconductors	FET RF 110V 220MHZ TO-272-4 RoHS: Not compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
MRF6V2300NBR1 DISTI # 31012206	NXP Semiconductors	Trans RF MOSFET N-CH 110V 5-Pin TO-272 W T/R RoHS: Compliant	498	250:$114.6400 100:$117.1500 50:$123.7700 25:$124.9500 10:$127.5300 1:$133.6200
MRF6V2300NBR1 DISTI # 47M2189	NXP Semiconductors	RF MOSFET, N CHANNEL, 110V, TO-272, FULL REEL,Drain Source Voltage Vds:110V,Continuous Drain Current Id:2.5mA,Power Dissipation Pd:300W,Operating Frequency Min:10MHz,Operating Frequency Max:600MHz,RF Transistor Case:TO-272 RoHS Compliant: Yes	0	1:$115.7700 10:$111.1900 25:$104.6500 100:$104.6500 500:$104.6500
MRF6V2300NBR1 DISTI # 841-MRF6V2300NBR1	NXP Semiconductors	RF MOSFET Transistors VHV6 300W TO272WB4N RoHS: Compliant	137	1:$142.4100 5:$139.6400 10:$135.0400 25:$129.3200 50:$127.5400 100:$118.6200 250:$115.9500
MRF6V2300NBR1	Freescale Semiconductor	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-272 RoHS: Compliant	157	1000:$117.3600 500:$123.5300 100:$128.6100 25:$134.1200 1:$144.4400
MRF6V2300NBR1 DISTI # MRF6V2300NBR1	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	5
MRF6V2300NBR1 DISTI # C1S537101497962	NXP Semiconductors	Trans RF MOSFET N-CH 110V 5-Pin TO-272 W T/R RoHS: Compliant	498	100:$117.1500 50:$123.7700 25:$124.9500 10:$127.5300 1:$133.6200

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Verfügbarkeit

Aktie:: 93
Auf Bestellung:: 2076
Menge eingeben:

Der aktuelle Preis von MRF6V2300NBR1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

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MRF6V2300NBR1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes