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| PartNumber | MRF6V2300NBR1 | MRF6V2300NBR5 | MRF6V2300NB |
| Description | RF MOSFET Transistors VHV6 300W TO272WB4N | RF MOSFET Transistors VHV6 300W Latrl N-Ch SE Broadband MOSFET | |
| Manufacturer | NXP | NXP | NXP |
| Product Category | RF MOSFET Transistors | RF MOSFET Transistors | IC Chips |
| RoHS | E | E | Details |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Technology | Si | Si | Si |
| Vds Drain Source Breakdown Voltage | 110 V | 110 V | 110 V |
| Minimum Operating Temperature | - 65 C | - | - 65 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-272-4 | TO-272-4 | TO-272 WB EP |
| Packaging | Reel | Reel | Reel |
| Configuration | Single Dual Drain Dual Gate | Single | - |
| Height | 2.64 mm | 2.64 mm | - |
| Length | 23.67 mm | 23.67 mm | - |
| Series | MRF6V2300N | MRF6V2300N | MRF6V2300N |
| Type | RF Power MOSFET | RF Power MOSFET | RF Power MOSFET |
| Width | 9.07 mm | 9.07 mm | - |
| Brand | NXP / Freescale | NXP / Freescale | NXP / Freescale |
| Channel Mode | Enhancement | - | - |
| Moisture Sensitive | Yes | Yes | - |
| Product Type | RF MOSFET Transistors | RF MOSFET Transistors | - |
| Factory Pack Quantity | 500 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Vgs Gate Source Voltage | - 0.5 V, 10 V | 10 V | - 0.5 V 10 V |
| Part # Aliases | 935309671528 | 935309671578 | - |
| Unit Weight | 0.067412 oz | 0.067412 oz | 0.067412 oz |
| Gain | - | 25.5 dB | - |
| Output Power | - | 300 W | - |
| Operating Frequency | - | 600 MHz | - |
| Vgs th Gate Source Threshold Voltage | - | 3 V | - |