MRF6V2300NBR5

Mfr. #:: MRF6V2300NBR5
Hersteller:: NXP / Freescale
Beschreibung:: RF MOSFET Transistors VHV6 300W Latrl N-Ch SE Broadband MOSFET
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: MRF6V2300NBR5 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: NXP

Produktkategorie:: HF-MOSFET-Transistoren

RoHS:: E

Polarität des Transistors:: N-Kanal

Technologie:: Si

Vds - Drain-Source-Durchbruchspannung:: 110 V

Gewinnen:: 25.5 dB

Ausgangsleistung:: 300 W

Maximale Betriebstemperatur:: + 150 C

Montageart:: SMD/SMT

Paket / Koffer:: TO-272-4

Verpackung:: Spule

Aufbau:: Single

Höhe:: 2.64 mm

Länge:: 23.67 mm

Arbeitsfrequenz:: 600 MHz

Serie:: MRF6V2300N

Typ:: HF-Leistungs-MOSFET

Breite:: 9.07 mm

Marke:: NXP / Freescale

Feuchtigkeitsempfindlich:: ja

Produktart:: HF-MOSFET-Transistoren

Werkspackungsmenge:: 50

Unterkategorie:: MOSFETs

Vgs - Gate-Source-Spannung:: 10 V

Vgs th - Gate-Source-Schwellenspannung:: 3 V

Teil # Aliase:: 935309671578

Gewichtseinheit:: 0.067412 oz

Tags: MRF6V2300NB, MRF6V23, MRF6V2, MRF6V, MRF6, MRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MRF6V2300NBR5 Beschreibung

***escale Semiconductor: Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-600 MHz, 300 W, 50 V

***W: RF Power Transistor,10 to 600 MHz, 300 W, Typ Gain in dB is 25.5 @ 220 MHz, 50 V, LDMOS, SOT1735

***ark: RF MOSFET, N CHANNEL, 110V, TO-272; Transistor Type:RF FET; Drain Source Voltage, Vds:110V; RF Transistor Case:TO-272; Gain:25.5dB; Gate-Source Voltage:10V; Operating Frequency Max:220MHz; Output Power, Pout:300W

***nell: RF FET, 110V, 600MHZ-10MHZ, TO-272WB; Drain Source Voltage Vds: 110V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 600MHz; Operating Frequency Max: 10MHz; RF Transistor Case: TO-272WB; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: MRF6V2300N Series; MSL: MSL 3 - 168 hours; SVHC: No SVHC (27-Jun-2018)

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
MRF6V2300NBR5 DISTI # V72:2272_07204051	NXP Semiconductors	Trans RF MOSFET N-CH 110V 5-Pin TO-272 W T/R	23	75000:$102.5699 30000:$104.3500 15000:$106.1300 6000:$107.9200 3000:$109.7000 1000:$111.4900 500:$113.2700 250:$115.0500 100:$116.8400 50:$118.6200 25:$120.4000 10:$122.1900 1:$123.9700
MRF6V2300NBR5 DISTI # MRF6V2300NBR5CT-ND	NXP Semiconductors	FET RF 110V 220MHZ TO-272-4 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	14In Stock	10:$129.5280 1:$135.9600
MRF6V2300NBR5 DISTI # MRF6V2300NBR5TR-ND	NXP Semiconductors	FET RF 110V 220MHZ TO-272-4 RoHS: Compliant Min Qty: 50 Container: Tape & Reel (TR)	Limited Supply - Call
MRF6V2300NBR5 DISTI # MRF6V2300NBR5DKR-ND	NXP Semiconductors	FET RF 110V 220MHZ TO-272-4 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
MRF6V2300NBR5 DISTI # 26078753	NXP Semiconductors	Trans RF MOSFET N-CH 110V 5-Pin TO-272 W T/R	37	1:$121.1663
MRF6V2300NBR5 DISTI # 25767376	NXP Semiconductors	Trans RF MOSFET N-CH 110V 5-Pin TO-272 W T/R	23	10:$122.1900 1:$123.9700
MRF6V2300NBR5 DISTI # 95M9601	NXP Semiconductors	RF MOSFET, N CHANNEL, 110V, TO-272,Drain Source Voltage Vds:110V,Continuous Drain Current Id:-,Power Dissipation Pd:-,Operating Frequency Min:10MHz,Operating Frequency Max:600MHz,RF Transistor Case:TO-272,No. of Pins:4Pins RoHS Compliant: Yes	0	1:$142.4100 10:$135.0400 25:$129.3200
MRF6V2300NBR5 DISTI # 841-MRF6V2300NBR5	NXP Semiconductors	RF MOSFET Transistors VHV6 300W Latrl N-Ch SE Broadband MOSFET RoHS: Compliant	97	1:$142.4100 5:$139.6400 10:$135.0400 25:$129.3200 50:$127.5400
MRF6V2300NBR5	Freescale Semiconductor	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270AA RoHS: Compliant	5	1000:$117.3600 500:$123.5300 100:$128.6100 25:$134.1200 1:$144.4400
MRF6V2300NBR5 DISTI # 2890605	NXP Semiconductors	RF FET, 110V, 600MHZ-10MHZ, TO-272WB RoHS: Compliant	0	1:£106.0000 5:£98.2600 10:£90.5100
MRF6V2300NBR5 DISTI # 2890605	NXP Semiconductors	RF FET, 110V, 600MHZ-10MHZ, TO-272WB RoHS: Compliant	0	1:$216.7100 10:$206.4600
MRF6V2300NBR5 DISTI # C1S233100393301	NXP Semiconductors	Trans RF MOSFET N-CH 110V 5-Pin TO-272 W T/R RoHS: Compliant	23	10:$122.1900 1:$123.9700

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Verfügbarkeit

Aktie:: 91
Auf Bestellung:: 2074
Menge eingeben:

Der aktuelle Preis von MRF6V2300NBR5 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

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MRF6V2300NBR5

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes