PartNumber | MRF6V2300NBR1 | MRF6V2300NBR5 | MRF6V2300NB |
Description | RF MOSFET Transistors VHV6 300W TO272WB4N | RF MOSFET Transistors VHV6 300W Latrl N-Ch SE Broadband MOSFET | |
Manufacturer | NXP | NXP | NXP |
Product Category | RF MOSFET Transistors | RF MOSFET Transistors | IC Chips |
RoHS | E | E | Details |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Technology | Si | Si | Si |
Vds Drain Source Breakdown Voltage | 110 V | 110 V | 110 V |
Minimum Operating Temperature | - 65 C | - | - 65 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-272-4 | TO-272-4 | TO-272 WB EP |
Packaging | Reel | Reel | Reel |
Configuration | Single Dual Drain Dual Gate | Single | - |
Height | 2.64 mm | 2.64 mm | - |
Length | 23.67 mm | 23.67 mm | - |
Series | MRF6V2300N | MRF6V2300N | MRF6V2300N |
Type | RF Power MOSFET | RF Power MOSFET | RF Power MOSFET |
Width | 9.07 mm | 9.07 mm | - |
Brand | NXP / Freescale | NXP / Freescale | NXP / Freescale |
Channel Mode | Enhancement | - | - |
Moisture Sensitive | Yes | Yes | - |
Product Type | RF MOSFET Transistors | RF MOSFET Transistors | - |
Factory Pack Quantity | 500 | 50 | - |
Subcategory | MOSFETs | MOSFETs | - |
Vgs Gate Source Voltage | - 0.5 V, 10 V | 10 V | - 0.5 V 10 V |
Part # Aliases | 935309671528 | 935309671578 | - |
Unit Weight | 0.067412 oz | 0.067412 oz | 0.067412 oz |
Gain | - | 25.5 dB | - |
Output Power | - | 300 W | - |
Operating Frequency | - | 600 MHz | - |
Vgs th Gate Source Threshold Voltage | - | 3 V | - |