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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| IRF532 | Harris Semiconductor | Power Field-Effect Transistor, 12A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant | 512 |
|
| IRF532 | IOR Corporation | MOSFET Transistor, N-Channel, TO-220AB | 22 |
|
| IRF532 | Samsung Semiconductor | MOSFET Transistor, N-Channel, TO-220AB | 4 |
|
| IRF532 | Harris Semiconductor | 3 | ||
| IRF532 | International Rectifier | 50 | ||
| IRF532 | 440 | |||
| IRF532 DISTI # IRF532 | National Semiconductor Corporation | Power Field-Effect Transistor, 17AI(D),100V,0.09ohm, 1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET RoHS: Compliant | 65 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: IRF9Z34STRL OMO.#: OMO-IRF9Z34STRL |
MOSFET RECOMMENDED ALT 844-IRF9Z34STRLPBF |
|
Mfr.#: IRF135SA204 OMO.#: OMO-IRF135SA204 |
MOSFET MOSFET, 135V, 168A 6.2 mOhm, 206 nC Qg |
|
Mfr.#: IRF7233T OMO.#: OMO-IRF7233T-1190 |
Neu und Original |
|
|
Mfr.#: IRF830APBF,IRF830A OMO.#: OMO-IRF830APBF-IRF830A-1190 |
Neu und Original |
|
|
Mfr.#: IRFP460C,IRFP360PBF,IRFP |
Neu und Original |
|
Mfr.#: IRFB3004GPBF |
IGBT Transistors MOSFET MOSFT 40V 195A 1.7 mOhm 160nC |
|
|
Mfr.#: IRFR430BTF OMO.#: OMO-IRFR430BTF-1190 |
Power Field-Effect Transistor, 3.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |
|
|
Mfr.#: IRFT-002 OMO.#: OMO-IRFT-002-1190 |
Neu und Original |
|
Mfr.#: IRFU110PBF OMO.#: OMO-IRFU110PBF-VISHAY |
MOSFET N-CH 100V 4.3A I-PAK |
|
|
Mfr.#: IRFY140CM OMO.#: OMO-IRFY140CM-1190 |
Trans MOSFET N-CH 100V 16A 3-Pin(3+Tab) TO-257AA |
