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SIHB12N60ET5-GE3

SIHB12N60ET5-GE3
Mfr. #:
SIHB12N60ET5-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CH 600V 12A TO263
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHB12N60ET5-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIHB12N60ET5-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SIHB12N60, SIHB12N6, SIHB12N, SIHB12, SIHB1, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 600V 12A TO263
***ronik
N-CH 600V 12A 380mOhm TO-263
***ark
N-CHANNEL 600V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Teil # Mfg. Beschreibung Aktie Preis
SIHB12N60ET5-GE3
DISTI # SIHB12N60ET5-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 12A TO263
RoHS: Not compliant
Min Qty: 1
Container: Bulk		800In Stock
  • 5000:$0.9145
  • 2500:$0.9497
  • 1000:$1.0201
  • 500:$1.2311
  • 100:$1.4985
  • 10:$1.8640
  • 1:$2.0800
SIHB12N60ET5-GE3
DISTI # SIHB12N60ET5-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin D2PAK T/R - Bulk (Alt: SIHB12N60ET5-GE3)
RoHS: Not Compliant
Min Qty: 800
Container: Bulk		Americas - 0
  • 8000:$0.8579
  • 4800:$0.8819
  • 3200:$0.9069
  • 1600:$0.9459
  • 800:$0.9749
SIHB12N60ET5-GE3
DISTI # 78-SIHB12N60ET5-GE3		Vishay IntertechnologiesMOSFET N-Channel 600V
RoHS: Compliant		0
  • 800:$1.1700
  • 1600:$0.9710
  • 3200:$0.9040
  • 5600:$0.8710
SIHB12N60ET5-GE3
DISTI # TMOS2029		Vishay IntertechnologiesN-CH 600V 12A 380mOhm TO-263
RoHS: Compliant		Stock DE - 3200Stock HK - 0Stock US - 0
  • 800:$1.3400
  • 1600:$1.2600
  • 2400:$1.1800
  • 3200:$1.0334
Bild Teil # Beschreibung
SIHB12N65E-GE3

Mfr.#: SIHB12N65E-GE3

OMO.#: OMO-SIHB12N65E-GE3

 MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
SIHB12N60E-GE3

Mfr.#: SIHB12N60E-GE3

OMO.#: OMO-SIHB12N60E-GE3

 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
SIHB12N60ET1-GE3

Mfr.#: SIHB12N60ET1-GE3

OMO.#: OMO-SIHB12N60ET1-GE3

 MOSFET N-Channel 600V
SIHB12N60E-GE3

Mfr.#: SIHB12N60E-GE3

OMO.#: OMO-SIHB12N60E-GE3-VISHAY

 Darlington Transistors MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS
SIHB12N65E-GE3

Mfr.#: SIHB12N65E-GE3

OMO.#: OMO-SIHB12N65E-GE3-VISHAY

 IGBT Transistors MOSFET 650V 392mOhm@10V 12A N-Ch E-SRS
SIHB12N60E

Mfr.#: SIHB12N60E

OMO.#: OMO-SIHB12N60E-1190

 Neu und Original
SIHB12N60EGE3

Mfr.#: SIHB12N60EGE3

OMO.#: OMO-SIHB12N60EGE3-1190

 Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
SIHB12N65E

Mfr.#: SIHB12N65E

OMO.#: OMO-SIHB12N65E-1190

 Neu und Original
SIHB12N60ET1-GE3

Mfr.#: SIHB12N60ET1-GE3

OMO.#: OMO-SIHB12N60ET1-GE3-VISHAY

 MOSFET N-CH 600V 12A TO263
SIHB12N60ET5-GE3

Mfr.#: SIHB12N60ET5-GE3

OMO.#: OMO-SIHB12N60ET5-GE3-VISHAY

 MOSFET N-CH 600V 12A TO263
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von SIHB12N60ET5-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,55 $
1,55 $
10
1,47 $
14,72 $
100
1,39 $
139,40 $
500
1,32 $
658,30 $
1000
1,24 $
1 239,10 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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