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IPB034N06L3GATMA1

IPB034N06L3GATMA1
Mfr. #:
IPB034N06L3GATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB034N06L3GATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
90 A
Rds On - Drain-Source-Widerstand:
2.7 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
79 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
167 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Serie:
OptiMOS 3
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
77 S
Abfallzeit:
13 ns
Produktart:
MOSFET
Anstiegszeit:
78 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
64 ns
Typische Einschaltverzögerungszeit:
25 ns
Teil # Aliase:
G IPB034N06L3 IPB34N6L3GXT SP000398062
Gewichtseinheit:
0.139332 oz
Tags
IPB034N06L3GA, IPB034N06L3G, IPB034N06L, IPB034N06, IPB034, IPB03, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 60 V 3.4 mOhm 59 nC OptiMOS™ Power Mosfet - D2PAK
***p One Stop Japan
Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK T/R
***ineon SCT
OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO263-3, RoHS
***nell
MOSFET, N CH, 90A, 60V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0027ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:167W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:90A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
Teil # Mfg. Beschreibung Aktie Preis
IPB034N06L3GATMA1
DISTI # IPB034N06L3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 90A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		1000In Stock
  • 1000:$0.8174
IPB034N06L3GATMA1
DISTI # IPB034N06L3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 90A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1000In Stock
  • 500:$1.0162
  • 100:$1.3065
  • 10:$1.6260
  • 1:$1.8000
IPB034N06L3GATMA1
DISTI # IPB034N06L3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 90A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1000In Stock
  • 500:$1.0162
  • 100:$1.3065
  • 10:$1.6260
  • 1:$1.8000
IPB034N06L3GATMA1
DISTI # 31575518		Infineon Technologies AGTrans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		2000
  • 1000:$0.5783
IPB034N06L3GATMA1
DISTI # SP000398062		Infineon Technologies AGTrans MOSFET N-CH 60V 90A 3-Pin TO-263 T/R (Alt: SP000398062)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 1000:€0.8499
  • 2000:€0.6949
  • 4000:€0.6369
  • 6000:€0.5879
  • 10000:€0.5459
IPB034N06L3GXT
DISTI # IPB034N06L3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 90A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB034N06L3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$0.5899
  • 2000:$0.5689
  • 4000:$0.5479
  • 6000:$0.5299
  • 10000:$0.5199
IPB034N06L3GATMA1
DISTI # 50Y2003		Infineon Technologies AGMOSFET, N-CH, 60V, 90A, 175DEG C, 167W,Transistor Polarity:N Channel,Continuous Drain Current Id:90A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0027ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V RoHS Compliant: Yes0
  • 500:$0.8970
  • 250:$0.9640
  • 100:$1.0300
  • 50:$1.1200
  • 25:$1.2000
  • 10:$1.2900
  • 1:$1.5100
IPB034N06L3 G
DISTI # 726-IPB034N06L3G		Infineon Technologies AGMOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
RoHS: Compliant		848
  • 1:$1.5000
  • 10:$1.2800
  • 100:$1.0200
  • 500:$0.8970
  • 1000:$0.7440
  • 2000:$0.6920
  • 5000:$0.6670
  • 10000:$0.6410
IPB034N06L3GATMA1
DISTI # 726-IPB034N06L3GATMA		Infineon Technologies AGMOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
RoHS: Compliant		60
  • 1:$1.5000
  • 10:$1.2800
  • 100:$1.0200
  • 500:$0.8970
  • 1000:$0.7440
  • 2000:$0.6920
  • 5000:$0.6670
  • 10000:$0.6410
IPB034N06L3GATMA1
DISTI # 2480798		Infineon Technologies AGMOSFET, N-CH, 60V, 90A, TO-263-3
RoHS: Compliant		1
  • 500:£0.6910
  • 250:£0.7550
  • 100:£0.7930
  • 25:£0.9210
  • 5:£1.0400
IPB034N06L3GATMA1
DISTI # 2480798RL		Infineon Technologies AGMOSFET, N-CH, 60V, 90A, TO-263-3
RoHS: Compliant		0
  • 1000:$1.1900
  • 500:$1.4200
  • 100:$1.6300
  • 10:$2.0400
  • 1:$2.4000
IPB034N06L3GATMA1
DISTI # 2480798		Infineon Technologies AGMOSFET, N-CH, 60V, 90A, TO-263-3
RoHS: Compliant		0
  • 1000:$1.1900
  • 500:$1.4200
  • 100:$1.6300
  • 10:$2.0400
  • 1:$2.4000
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1984
Menge eingeben:
Der aktuelle Preis von IPB034N06L3GATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,50 $
1,50 $
10
1,28 $
12,80 $
100
1,02 $
102,00 $
500
0,90 $
448,50 $
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