IXFR36N50P

IXFR36N50P
Mfr. #:
IXFR36N50P
Hersteller:
Littelfuse
Beschreibung:
Darlington Transistors MOSFET 500V 36A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFR36N50P Datenblatt
Die Zustellung:
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Zahlung:
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ECAD Model:
Mehr Informationen:
IXFR36N50P Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
IXYS
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
IXFR36N50
Verpackung
Rohr
Gewichtseinheit
0.186952 oz
Montageart
SMD/SMT
Handelsname
HyperFET
Paket-Koffer
TO-247-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
156 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
23 ns
Anstiegszeit
23 ns
Vgs-Gate-Source-Spannung
30 V
ID-Dauer-Drain-Strom
19 A
Vds-Drain-Source-Breakdown-Voltage
500 V
Rds-On-Drain-Source-Widerstand
190 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
82 ns
Typische-Einschaltverzögerungszeit
29 ns
Vorwärts-Transkonduktanz-Min
35 S
Kanal-Modus
Erweiterung
Tags
IXFR3, IXFR, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 500 V 0.19 Ohm Through Hole Power Mosfet - ISOPLUS-220
***ical
Trans MOSFET N-CH Si 500V 19A 3-Pin(3+Tab) ISOPLUS 247
***nell
MOSFET, N, ISOPLUS247; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:500V; Current, Id Cont:19A; Resistance, Rds On:0.19ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:ISOPLUS-247; Termination Type:Through Hole; Capacitance, Ciss Typ:5500pF; Charge, Gate N-channel:93nC; Power, Pd:156W; Voltage, Isolation:2500V; Voltage, Vds Max:500V; Rth:0.75; Time, trr Max:200ns
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Teil # Mfg. Beschreibung Aktie Preis
IXFR36N50P
DISTI # IXFR36N50P-ND
IXYS CorporationMOSFET N-CH 500V 19A ISOPLUS247
RoHS: Compliant
Min Qty: 30
Container: Tube
Temporarily Out of Stock
  • 30:$8.8847
IXFR36N50P
DISTI # 747-IXFR36N50P
IXYS CorporationMOSFET 500V 36A
RoHS: Compliant
205
  • 1:$11.3200
  • 10:$10.2000
  • 25:$8.4800
  • 50:$7.8800
  • 100:$7.7000
  • 250:$7.0300
  • 500:$6.4100
  • 1000:$6.1200
Bild Teil # Beschreibung
IXFR36N60P

Mfr.#: IXFR36N60P

OMO.#: OMO-IXFR36N60P

MOSFET 600V 20A
IXFR32N100Q3

Mfr.#: IXFR32N100Q3

OMO.#: OMO-IXFR32N100Q3

MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/23A
IXFR30N60P

Mfr.#: IXFR30N60P

OMO.#: OMO-IXFR30N60P

MOSFET 600V 30A
IXFR32N80Q3

Mfr.#: IXFR32N80Q3

OMO.#: OMO-IXFR32N80Q3

MOSFET Q3Class HiPerFET Pwr MOSFET 800V/24A
IXFR34N80

Mfr.#: IXFR34N80

OMO.#: OMO-IXFR34N80

MOSFET 800V 28A
IXFR32N80P

Mfr.#: IXFR32N80P

OMO.#: OMO-IXFR32N80P-IXYS-CORPORATION

Darlington Transistors MOSFET 20 Amps 800V 0.29 Rds
IXFR38N80Q2

Mfr.#: IXFR38N80Q2

OMO.#: OMO-IXFR38N80Q2-IXYS-CORPORATION

MOSFET 38 Amps 800V 0.24 Rds
IXFR32N80Q3

Mfr.#: IXFR32N80Q3

OMO.#: OMO-IXFR32N80Q3-IXYS-CORPORATION

IGBT Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 800V/24A
IXFR32N100P

Mfr.#: IXFR32N100P

OMO.#: OMO-IXFR32N100P-IXYS-CORPORATION

MOSFET 32 Amps 1000V
IXFR30N60P

Mfr.#: IXFR30N60P

OMO.#: OMO-IXFR30N60P-IXYS-CORPORATION

MOSFET 600V 30A
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3000
Menge eingeben:
Der aktuelle Preis von IXFR36N50P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
9,18 $
9,18 $
10
8,72 $
87,21 $
100
8,26 $
826,20 $
500
7,80 $
3 901,50 $
1000
7,34 $
7 344,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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