PartNumber | IXFR32N100Q3 | IXFR30N60P | IXFR32N100P |
Description | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/23A | MOSFET 600V 30A | MOSFET 32 Amps 1000V |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 1 kV | 600 V | 1 kV |
Id Continuous Drain Current | 23 A | 15 A | 18 A |
Rds On Drain Source Resistance | 350 mOhms | 250 mOhms | 340 mOhms |
Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
Qg Gate Charge | 195 nC | - | - |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 570 W | 166 W | 320 W |
Configuration | Single | Single | Single |
Tradename | HiPerFET | HiPerFET | HiPerFET |
Packaging | Tube | Tube | Tube |
Series | IXFR32N100 | IXFR30N60 | IXFR32N100 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | IXYS | IXYS | IXYS |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 300 ns | 20 ns | 55 ns |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.056438 oz | 0.186952 oz | 0.056438 oz |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Channel Mode | - | Enhancement | Enhancement |
Height | - | 21.34 mm | 21.34 mm |
Length | - | 16.13 mm | 16.13 mm |
Width | - | 5.21 mm | 5.21 mm |
Forward Transconductance Min | - | 27 S | - |
Fall Time | - | 25 ns | 43 ns |
Typical Turn Off Delay Time | - | 75 ns | 76 ns |
Typical Turn On Delay Time | - | 22 ns | 50 ns |