SI1401EDH-T1-GE3

Mfr. #:: SI1401EDH-T1-GE3
Hersteller:: Vishay
Beschreibung:: MOSFET P-CH 12V 4A SC-70-6
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SI1401EDH-T1-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: SI1401EDH-T1-GE3 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller: Vishay Siliconix

Produktkategorie: FETs - Einzeln

Serie: GrabenFETR

Verpackung: Digi-ReelR Alternative Verpackung

Teil-Aliasnamen: SI1401EDH-GE3

Gewichtseinheit: 0.000265 oz

Montageart: SMD/SMT

Paket-Koffer: 6-TSSOP, SC-88, SOT-363

Technologie: Si

Betriebstemperatur: -55°C ~ 150°C (TJ)

Befestigungsart: Oberflächenmontage

Anzahl der Kanäle: 1 Channel

Lieferanten-Geräte-Paket: SC-70-6 (SOT-363)

Aufbau: Single

FET-Typ: MOSFET P-Kanal, Metalloxid

Leistung max: 2.8W

Transistor-Typ: 1 P-Channel

Drain-zu-Source-Spannung-Vdss: 12V

Eingangskapazität-Ciss-Vds: -

FET-Funktion: Standard

Strom-Dauer-Drain-Id-25°C: 4A (Tc)

Rds-On-Max-Id-Vgs: 34 mOhm @ 5.5A, 4.5V

Vgs-th-Max-Id: 1V @ 250μA

Gate-Lade-Qg-Vgs: 36nC @ 8V

Pd-Verlustleistung: 2.8 W

Maximale-Betriebstemperatur: + 150 C

Mindest-Betriebstemperatur: - 55 C

Vgs-Gate-Source-Spannung: 10 V

ID-Dauer-Drain-Strom: - 4 A

Vds-Drain-Source-Breakdown-Voltage: - 12 V

Vgs-th-Gate-Source-Threshold-Voltage: - 1 V

Rds-On-Drain-Source-Widerstand: 34 mOhms

Transistor-Polarität: P-Kanal

Qg-Gate-Ladung: 24 nC

Vorwärts-Transkonduktanz-Min: 16 S

Tags: SI1401E, SI1401, SI140, SI14, SI1

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI1401EDH-T1-GE3 Beschreibung

***ure Electronics: Single P-Channel 12 V 34 mOhm 36 nC Surface Mount Mosfet - SOT-363 (SC-70)

***ical: Trans MOSFET P-CH 12V 4A 6-Pin SC-70 T/R

***nell: MOSFET, P CH, -12V, -4A, SOT-363; Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.072ohm; Rds(on) Test Voltage Vgs:-1.5V; Power Dissipation Pd:2.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-363; No. of Pins:6; MSL:-

SI1401EDH-T1-GE3 Mehr Informationen

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET® P-Channel MOSFETs: Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SI1401EDH-T1-GE3 DISTI # V72:2272_07433774	Vishay Intertechnologies	Trans MOSFET P-CH 12V 4A 6-Pin SC-70 T/R RoHS: Compliant	122	100:$0.2233 25:$0.2693 10:$0.2993 1:$0.4084
SI1401EDH-T1-GE3 DISTI # SI1401EDH-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 12V 4A SC-70-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	164In Stock	1000:$0.1734 500:$0.2243 100:$0.3059 10:$0.4080 1:$0.4800
SI1401EDH-T1-GE3 DISTI # SI1401EDH-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 12V 4A SC-70-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	164In Stock	1000:$0.1734 500:$0.2243 100:$0.3059 10:$0.4080 1:$0.4800
SI1401EDH-T1-GE3 DISTI # SI1401EDH-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 12V 4A SC-70-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.1535
SI1401EDH-T1-GE3 DISTI # C1S803603683595	Vishay Intertechnologies	MOSFETs RoHS: Compliant	122	100:$0.2233 25:$0.2693 10:$0.2993
SI1401EDH-T1-GE3 DISTI # 25778419	Vishay Intertechnologies	Trans MOSFET P-CH 12V 4A 6-Pin SC-70 T/R RoHS: Compliant	122	100:$0.2233 51:$0.2693
SI1401EDH-T1-GE3 DISTI # SI1401EDH-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 12V 4A 6-Pin SC-70 T/R (Alt: SI1401EDH-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.3089 6000:€0.2109 12000:€0.1809 18000:€0.1669 30000:€0.1559
SI1401EDH-T1-GE3 DISTI # SI1401EDH-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 12V 4A 6-Pin SC-70 T/R - Tape and Reel (Alt: SI1401EDH-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.1309 6000:$0.1269 12000:$0.1209 18000:$0.1179 30000:$0.1149
SI1401EDH-T1-GE3 DISTI # 97W2622	Vishay Intertechnologies	MOSFET Transistor, P Channel, -4 A, -12 V, 0.072 ohm, -1.5 V, 400 mV , RoHS Compliant: Yes	0	1:$0.4300 10:$0.3250 25:$0.2970 50:$0.2700 100:$0.2420 500:$0.1990 1000:$0.1540
SI1401EDH-T1-GE3 DISTI # 86R3831	Vishay Intertechnologies	MOSFET, P CHANNEL, -12V, -4A, SOT-363-6, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-4A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.072ohm,Rds(on) Test Voltage Vgs:-1.5V,No. of Pins:6Pins , RoHS Compliant: Yes	0	1:$0.1340 3000:$0.1330 6000:$0.1260 12000:$0.1120
SI1401EDH-T1-GE3 DISTI # 69W7175	Vishay Intertechnologies	MOSFET, P CHANNEL, -12V, -4A, SOT-363-6,Transistor Polarity:P Channel,Continuous Drain Current Id:-4A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.072ohm,Rds(on) Test Voltage Vgs:-1.5V,Threshold Voltage Vgs:400mV , RoHS Compliant: Yes	0	1:$0.6040 25:$0.5300 50:$0.4640 100:$0.3870 250:$0.3240 500:$0.2720 1000:$0.2320 2500:$0.1890
SI1401EDH-T1-GE3 DISTI # 781-SI1401EDH-T1-GE3	Vishay Intertechnologies	MOSFET -12V Vds 10V Vgs SC70-6 RoHS: Compliant	1112	1:$0.4300 10:$0.3250 100:$0.2420 500:$0.1990 1000:$0.1540 3000:$0.1400 6000:$0.1310
SI1401EDH-T1-GE3 DISTI # 2335277	Vishay Intertechnologies	MOSFET, P CH, -12V, -4A, SOT-363 RoHS: Compliant	0	1:$0.6810 10:$0.5150 100:$0.3840 500:$0.3150 1000:$0.2440 3000:$0.2220 6000:$0.2110
SI1401EDH-T1-GE3 DISTI # 2459404	Vishay Intertechnologies	MOSFET, P CHANNEL, -12V, -4A, SOT-363-6 RoHS: Compliant	0	1:$0.6810 10:$0.5150 100:$0.3840 500:$0.3150 1000:$0.2440 3000:$0.2220 6000:$0.2070
SI1401EDH-T1-GE3 DISTI # 2335277	Vishay Intertechnologies	MOSFET, P CH, -12V, -4A, SOT-363 RoHS: Compliant	0	5:£0.2830 25:£0.2710 100:£0.1850 250:£0.1690 500:£0.1520
SI1401EDH-T1-GE3	Vishay Intertechnologies	MOSFET -12V Vds 10V Vgs SC70-6 RoHS: Compliant	Americas - 36000

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: SI1401EDH-T1-GE3 OMO.#: OMO-SI1401EDH-T1-GE3	MOSFET -12V Vds 10V Vgs SC70-6
	Mfr.#: SI1401EDH-T1-GE OMO.#: OMO-SI1401EDH-T1-GE-1190	Neu und Original
	Mfr.#: SI1401EDH-T1-GE3 OMO.#: OMO-SI1401EDH-T1-GE3-VISHAY	MOSFET P-CH 12V 4A SC-70-6
	Mfr.#: SI1401EDH-T1-GE3-CUT TAPE OMO.#: OMO-SI1401EDH-T1-GE3-CUT-TAPE-1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 2500
Menge eingeben:

Der aktuelle Preis von SI1401EDH-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,17 $~~; ~~0,17 $~~

10: ~~0,16 $~~; ~~1,64 $~~

100: ~~0,16 $~~; ~~15,51 $~~

500: ~~0,15 $~~; ~~73,25 $~~

1000: ~~0,14 $~~; ~~137,90 $~~

Beginnen mit

SI1401E 3
SI1401 4
SI140 47
SI14 148
SI1 1080

SI1401EDH-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes