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SI1401EDH-T1-GE3

SI1401EDH-T1-GE3
Mfr. #:
SI1401EDH-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET -12V Vds 10V Vgs SC70-6
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI1401EDH-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI1401EDH-T1-GE3 DatasheetSI1401EDH-T1-GE3 Datasheet (P4-P6)SI1401EDH-T1-GE3 Datasheet (P7-P9)SI1401EDH-T1-GE3 Datasheet (P10-P12)
ECAD Model:
Mehr Informationen:
SI1401EDH-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-363-6
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
12 V
Id - Kontinuierlicher Drainstrom:
4 A
Rds On - Drain-Source-Widerstand:
28 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
36 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.8 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
SI1
Transistortyp:
1 P-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
16 S
Abfallzeit:
985 ns
Produktart:
MOSFET
Anstiegszeit:
420 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
1325 ns
Typische Einschaltverzögerungszeit:
160 ns
Teil # Aliase:
SI1401EDH-GE3
Gewichtseinheit:
0.000265 oz
Tags
SI1401E, SI1401, SI140, SI14, SI1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single P-Channel 12 V 34 mOhm 36 nC Surface Mount Mosfet - SOT-363 (SC-70)
***ical
Trans MOSFET P-CH 12V 4A 6-Pin SC-70 T/R
***nell
MOSFET, P CH, -12V, -4A, SOT-363; Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.072ohm; Rds(on) Test Voltage Vgs:-1.5V; Power Dissipation Pd:2.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-363; No. of Pins:6; MSL:-
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
Teil # Mfg. Beschreibung Aktie Preis
SI1401EDH-T1-GE3
DISTI # V72:2272_07433774		Vishay IntertechnologiesTrans MOSFET P-CH 12V 4A 6-Pin SC-70 T/R
RoHS: Compliant		122
  • 100:$0.2233
  • 25:$0.2693
  • 10:$0.2993
  • 1:$0.4084
SI1401EDH-T1-GE3
DISTI # SI1401EDH-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 12V 4A SC-70-6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		164In Stock
  • 1000:$0.1734
  • 500:$0.2243
  • 100:$0.3059
  • 10:$0.4080
  • 1:$0.4800
SI1401EDH-T1-GE3
DISTI # SI1401EDH-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 12V 4A SC-70-6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		164In Stock
  • 1000:$0.1734
  • 500:$0.2243
  • 100:$0.3059
  • 10:$0.4080
  • 1:$0.4800
SI1401EDH-T1-GE3
DISTI # SI1401EDH-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 12V 4A SC-70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.1535
SI1401EDH-T1-GE3
DISTI # C1S803603683595		Vishay IntertechnologiesMOSFETs
RoHS: Compliant		122
  • 100:$0.2233
  • 25:$0.2693
  • 10:$0.2993
SI1401EDH-T1-GE3
DISTI # 25778419		Vishay IntertechnologiesTrans MOSFET P-CH 12V 4A 6-Pin SC-70 T/R
RoHS: Compliant		122
  • 100:$0.2233
  • 51:$0.2693
SI1401EDH-T1-GE3
DISTI # SI1401EDH-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 12V 4A 6-Pin SC-70 T/R (Alt: SI1401EDH-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.3089
  • 6000:€0.2109
  • 12000:€0.1809
  • 18000:€0.1669
  • 30000:€0.1559
SI1401EDH-T1-GE3
DISTI # SI1401EDH-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 12V 4A 6-Pin SC-70 T/R - Tape and Reel (Alt: SI1401EDH-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.1309
  • 6000:$0.1269
  • 12000:$0.1209
  • 18000:$0.1179
  • 30000:$0.1149
SI1401EDH-T1-GE3
DISTI # 97W2622		Vishay IntertechnologiesMOSFET Transistor, P Channel, -4 A, -12 V, 0.072 ohm, -1.5 V, 400 mV , RoHS Compliant: Yes0
  • 1:$0.4300
  • 10:$0.3250
  • 25:$0.2970
  • 50:$0.2700
  • 100:$0.2420
  • 500:$0.1990
  • 1000:$0.1540
SI1401EDH-T1-GE3
DISTI # 86R3831		Vishay IntertechnologiesMOSFET, P CHANNEL, -12V, -4A, SOT-363-6, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-4A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.072ohm,Rds(on) Test Voltage Vgs:-1.5V,No. of Pins:6Pins , RoHS Compliant: Yes0
  • 1:$0.1340
  • 3000:$0.1330
  • 6000:$0.1260
  • 12000:$0.1120
SI1401EDH-T1-GE3
DISTI # 69W7175		Vishay IntertechnologiesMOSFET, P CHANNEL, -12V, -4A, SOT-363-6,Transistor Polarity:P Channel,Continuous Drain Current Id:-4A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.072ohm,Rds(on) Test Voltage Vgs:-1.5V,Threshold Voltage Vgs:400mV , RoHS Compliant: Yes0
  • 1:$0.6040
  • 25:$0.5300
  • 50:$0.4640
  • 100:$0.3870
  • 250:$0.3240
  • 500:$0.2720
  • 1000:$0.2320
  • 2500:$0.1890
SI1401EDH-T1-GE3
DISTI # 781-SI1401EDH-T1-GE3		Vishay IntertechnologiesMOSFET -12V Vds 10V Vgs SC70-6
RoHS: Compliant		1112
  • 1:$0.4300
  • 10:$0.3250
  • 100:$0.2420
  • 500:$0.1990
  • 1000:$0.1540
  • 3000:$0.1400
  • 6000:$0.1310
SI1401EDH-T1-GE3
DISTI # 2335277		Vishay IntertechnologiesMOSFET, P CH, -12V, -4A, SOT-363
RoHS: Compliant		0
  • 1:$0.6810
  • 10:$0.5150
  • 100:$0.3840
  • 500:$0.3150
  • 1000:$0.2440
  • 3000:$0.2220
  • 6000:$0.2110
SI1401EDH-T1-GE3
DISTI # 2459404		Vishay IntertechnologiesMOSFET, P CHANNEL, -12V, -4A, SOT-363-6
RoHS: Compliant		0
  • 1:$0.6810
  • 10:$0.5150
  • 100:$0.3840
  • 500:$0.3150
  • 1000:$0.2440
  • 3000:$0.2220
  • 6000:$0.2070
SI1401EDH-T1-GE3
DISTI # 2335277		Vishay IntertechnologiesMOSFET, P CH, -12V, -4A, SOT-363
RoHS: Compliant		0
  • 5:£0.2830
  • 25:£0.2710
  • 100:£0.1850
  • 250:£0.1690
  • 500:£0.1520
SI1401EDH-T1-GE3Vishay IntertechnologiesMOSFET -12V Vds 10V Vgs SC70-6
RoHS: Compliant		Americas - 36000
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    Verfügbarkeit
    Aktie:
    29
    Auf Bestellung:
    2012
    Menge eingeben:
    Der aktuelle Preis von SI1401EDH-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,42 $
    0,42 $
    10
    0,32 $
    3,24 $
    100
    0,24 $
    24,10 $
    500
    0,20 $
    99,00 $
    1000
    0,15 $
    153,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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