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SISH615ADN-T1-GE3

SISH615ADN-T1-GE3
Mfr. #:
SISH615ADN-T1-GE3
Hersteller:
Vishay
Beschreibung:
P-Channel 20 V (D-S) MOSFET PowerPAK 1212-8SH 1G , 4.4 m @ 10V m @ 7.5V 6 m @ 4.5V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SISH615ADN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SISH615ADN-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SISH6, SISH, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Teil # Mfg. Beschreibung Aktie Preis
SISH615ADN-T1-GE3
DISTI # V72:2272_22759346		Vishay IntertechnologiesP-Channel 20 V (D-S) MOSFET PowerPAK 1212-8SH 1G , 4.4 m @ 10Vm @ 7.5V 6 m @ 4.5V3000
  • 3000:$0.2128
  • 1000:$0.2319
  • 500:$0.2950
  • 250:$0.3464
  • 100:$0.3608
  • 25:$0.4643
  • 10:$0.5207
  • 1:$0.6406
SISH615ADN-T1-GE3
DISTI # SISH615ADN-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CHAN 20 V POWERPAK 1212
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5384In Stock
  • 1000:$0.2596
  • 500:$0.3245
  • 100:$0.4104
  • 10:$0.5350
  • 1:$0.6100
SISH615ADN-T1-GE3
DISTI # SISH615ADN-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CHAN 20 V POWERPAK 1212
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5384In Stock
  • 1000:$0.2596
  • 500:$0.3245
  • 100:$0.4104
  • 10:$0.5350
  • 1:$0.6100
SISH615ADN-T1-GE3
DISTI # SISH615ADN-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CHAN 20 V POWERPAK 1212
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 30000:$0.1995
  • 15000:$0.2047
  • 6000:$0.2126
  • 3000:$0.2284
SISH615ADN-T1-GE3
DISTI # 31081364		Vishay IntertechnologiesP-Channel 20 V (D-S) MOSFET PowerPAK 1212-8SH 1G , 4.4 m @ 10Vm @ 7.5V 6 m @ 4.5V3000
  • 3000:$0.2128
  • 1000:$0.2319
  • 500:$0.2950
  • 250:$0.3464
  • 100:$0.3608
  • 34:$0.4643
SISH615ADN-T1-GE3
DISTI # SISH615ADN-T1-GE3		Vishay IntertechnologiesP-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SISH615ADN-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.1919
  • 30000:$0.1969
  • 18000:$0.2029
  • 12000:$0.2109
  • 6000:$0.2179
SISH615ADN-T1-GE3
DISTI # 81AC3497		Vishay IntertechnologiesP-CHANNEL 20-V (D-S) MOSFET0
  • 50000:$0.1940
  • 30000:$0.2030
  • 20000:$0.2180
  • 10000:$0.2330
  • 5000:$0.2520
  • 1:$0.2580
SISH615ADN-T1-GE3
DISTI # 99AC9585		Vishay IntertechnologiesMOSFET, P-CH, -20V, -35A, 150DEG C, 52W,Transistor Polarity:P Channel,Continuous Drain Current Id:-35A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.0035ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.5V,RoHS Compliant: Yes20
  • 1000:$0.2420
  • 500:$0.3030
  • 250:$0.3350
  • 100:$0.3680
  • 50:$0.4060
  • 25:$0.4450
  • 10:$0.4840
  • 1:$0.5960
SISH615ADN-T1-GE3
DISTI # 78-SISH615ADN-T1-GE3		Vishay IntertechnologiesMOSFET -20V Vds,12V Vgs PowerPAK 1212-8SH
RoHS: Compliant		4584
  • 1:$0.5900
  • 10:$0.4780
  • 100:$0.3630
  • 500:$0.3000
  • 1000:$0.2400
  • 3000:$0.2170
  • 6000:$0.2020
  • 9000:$0.1950
  • 24000:$0.1870
SISH615ADN-T1-GE3
DISTI # 3019134		Vishay IntertechnologiesMOSFET, P-CH, -20V, -35A, 150DEG C, 52W
RoHS: Compliant		0
  • 1000:$0.3400
  • 500:$0.4290
  • 250:$0.4800
  • 100:$0.5310
  • 25:$0.7130
  • 5:$0.7810
SISH615ADN-T1-GE3
DISTI # 3019134		Vishay IntertechnologiesMOSFET, P-CH, -20V, -35A, 150DEG C, 52W5930
  • 500:£0.2180
  • 250:£0.2410
  • 100:£0.2640
  • 10:£0.3870
  • 1:£0.4900
Bild Teil # Beschreibung
SISH615ADN-T1-GE3

Mfr.#: SISH615ADN-T1-GE3

OMO.#: OMO-SISH615ADN-T1-GE3

 MOSFET -20V Vds; 12V Vgs PowerPAK 1212-8SH
SISH615ADN-T1-GE3

Mfr.#: SISH615ADN-T1-GE3

OMO.#: OMO-SISH615ADN-T1-GE3-VISHAY

 P-Channel 20 V (D-S) MOSFET PowerPAK 1212-8SH 1G , 4.4 m @ 10V m @ 7.5V 6 m @ 4.5V
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von SISH615ADN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
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Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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