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IXTH16N10D2

IXTH16N10D2
Mfr. #:
IXTH16N10D2
Hersteller:
Littelfuse
Beschreibung:
MOSFET N-CH 100V 16A MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXTH16N10D2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTH16N10D2 DatasheetIXTH16N10D2 Datasheet (P4-P5)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
16 A
Rds On - Drain-Source-Widerstand:
64 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
225 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
830 W
Aufbau:
Single
Kanalmodus:
Erschöpfung
Verpackung:
Rohr
Produkt:
MOSFET
Serie:
IXTH16N10D2
Transistortyp:
1 N-Channel
Typ:
MOSFET
Marke:
IXYS
Vorwärtstranskonduktanz - Min:
11 S
Abfallzeit:
70 ns
Produktart:
MOSFET
Anstiegszeit:
43 ns
Werkspackungsmenge:
30
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
340 ns
Typische Einschaltverzögerungszeit:
45 ns
Gewichtseinheit:
0.056438 oz
Tags
IXTH16N, IXTH16, IXTH1, IXTH, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***-Wing Technology
MOSFET N-CH 100V 16A TO-247
***ource
Standard Power MOSFET
***(Formerly Allied Electronics)
MOSFET, Power; N-Channel; 0.052 Ohms (Max.) @ 10 V, 16 A; 100 V (Min.); 40 degC
***el Electronic
In a Tube of 25, IRFP140NPBF N-Channel MOSFET, 33 A, 100 V HEXFET, 3-Pin TO-247AC Infineon
***ure Electronics
Single N-Channel 100 V 0.052 Ohm 94 nC HEXFET® Power Mosfet - TO-247-3AC
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:100V; On Resistance Rds(on):52mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:94W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:33A; Package / Case:TO-247AC; Power Dissipation Pd:94W; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
IRFP4468PBF N-channel MOSFET Transistor, 290 A, 100 V, 3-Pin TO-247AC
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-247 Power dissipation: 520 W
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***ment14 APAC
MOSFET, 100V 290A TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:290A; Drain Source Voltage Vds:100V; On Resistance Rds(on):2mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:520W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:290A; Package / Case:TO-247AC; Power Dissipation Pd:520W; Pulse Current Idm:1120A; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.036Ohm;ID 42A;TO-247AC;PD 160W;VGS +/-20V
***eco
Transistor MOSFET Negative Channel 100 Volt 42A 3-Pin(3+Tab) TO-247AC
***ure Electronics
Single N-Channel 100V 36 mOhm 110 nC HEXFET® Power Mosfet - TO-247AC
***klin Elektronik
INFINEON THT MOSFET NFET 100V 42A 36mΩ 175°C TO-247 IRFP150N
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:42A; On Resistance, Rds(on):36mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247AC ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
***ment14 APAC
MOSFET, N, 100V, 39A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:100V; On Resistance Rds(on):36mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:42A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.1°C/W; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:140A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Teil # Mfg. Beschreibung Aktie Preis
IXTH16N10D2
DISTI # IXTH16N10D2-ND		IXYS CorporationMOSFET N-CH 100V 16A TO-247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$9.8977
IXTH16N10D2
DISTI # 747-IXTH16N10D2		IXYS CorporationMOSFET N-CH 100V 16A MOSFET
RoHS: Compliant		39
  • 1:$13.5400
  • 10:$12.3100
  • 25:$11.3800
  • 50:$10.4700
  • 100:$10.2100
  • 250:$9.3600
  • 500:$8.5000
  • 1000:$7.7600
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Verfügbarkeit
Aktie:
61
Auf Bestellung:
2044
Menge eingeben:
Der aktuelle Preis von IXTH16N10D2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
13,54 $
13,54 $
10
12,31 $
123,10 $
25
9,89 $
247,25 $
50
9,62 $
481,00 $
100
9,49 $
949,00 $
250
9,36 $
2 340,00 $
500
8,50 $
4 250,00 $
1000
7,76 $
7 760,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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